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Online ISSN 1350-911X Print ISSN 0013-5194

Electronics Letters

Volume 18, Issue 5, 4 March 1982

Volumes & issues:

Volume 18, Issue 5

4 March 1982

AlGaAs/GaAs microcleaved facet (MCF) laser monolithically integrated with photodiode
High-strength small reinforcement for spliced optical fibre
Study on ellipticity properties of single-feed-type circularly polarised microstrip antennas
  • Author(s): M. Haneishi ; T. Nambara ; S. Yoshida
  • Source: Electronics Letters, Volume 18, Issue 5, p. 191 –193
  • DOI:  10.1049/el:19820132
  • Type: Article
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  • p. 191 –193 (3)
    The letter presents the basic method for the design of single-feed-type circularly polarised microstrip antennas (SCPA). An SCPA designed to operate under condition of circular polarisation (OCCP) proved to produce an axial ratio below 0.5 dB at the boresight. Moreover, the measured and calculated axial ratios for SCPA agreed well within the effective range. These results indicate the use of the design method reported in the letter for construction of SCPA with excellent directivity.
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Integrated tapped MOS analogue delay line using switched capacitor technique
  • Author(s): T. Enomoto ; T. Ishihara ; Masa-Aki Yasumoto
  • Source: Electronics Letters, Volume 18, Issue 5, p. 193 –194
  • DOI:  10.1049/el:19820133
  • Type: Article
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  • p. 193 –194 (2)
    A tapped MOS analogue delay line based on the switched capacitor technique for realisation of low-power analogue LSIs is fabricated using a VLSI process. Excellent characteristics such as large signal handling capability, low total harmonic distortion of −85 dB for 3V(p-p) input and fast operation speed of more than 1 MHz clock rate with negligible charge transfer loss are obtained.
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Wideband measurement of microwave characteristics of soils
Capacitors made by anodisation of aluminium for wideband GaAs ICs
Determination of resonant frequency for 2nd-harmonic-mode millimetre-wave transferred-electron oscillators
Multiphonon absorption in infra-red fluoride glasses
Anisotropy in spun single-mode fibres
Redistribution of implanted oxygen in GaAs
  • Author(s): P.N. Favennec ; B. Deveaud ; M. Salvi ; A. Martinez ; C. Armand
  • Source: Electronics Letters, Volume 18, Issue 5, p. 202 –203
  • DOI:  10.1049/el:19820139
  • Type: Article
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  • p. 202 –203 (2)
    We show that implanted oxygen in GaAs has two different thermal behaviours depending on the implantation dose. In the case of low doses, below 1014 oxygen-cm−2 oxygen diffuses very quickly at 900°C. In the case of high doses, above 1014 oxygen-cm−2, oxygen piles up around its projected range during annealing. This should be due to the formation of precipitates. The presence of substrate impurities in the nucleation process is not suspected.
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Novel deposit/spin waveguide interconnection (DSWI) technique for semiconductor integrated optics
Effect of antenna polarisation on rain scattering
Low-frequency emissions from deep levels in GaAs MESFETs
Calculation of I/V characteristics for ion-implanted GaAs MESFETs
Optical phase modulation in an injection locked AlGaAs semiconductor laser
  • Author(s): S. Kobayashi  and  T. Kimura
  • Source: Electronics Letters, Volume 18, Issue 5, p. 210 –211
  • DOI:  10.1049/el:19820144
  • Type: Article
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  • p. 210 –211 (2)
    Optical phase modulation by injecting coherent CW light into a directly frequency modulated semiconductor laser is reported. Phase modulation was obtained at up to 800 MHz modulation frequency without distortion for a 1.6 GHz full locking bandwidth. A static phase shift of π took place with a 0.48 mA bias current change in the injection locked laser. Experimental and theoretical results showed that the product of the normalised phase deviation by the frequency deviation and the cutoff modulation frequency is constant.
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Large-area low-frequency discharge-produced a-Si:H
Electron mobility in degenerate tellurium doped In0.53Ga0.47As LPE layers
  • Author(s): P.A. Claxton ; J. Shirafuji ; P.A. Houston ; P.N. Robson
  • Source: Electronics Letters, Volume 18, Issue 5, p. 213 –214
  • DOI:  10.1049/el:19820146
  • Type: Article
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  • p. 213 –214 (2)
    Tellurium doped In0.53Ga0.47As epitaxial layers have been grown by LPE in the range n=1018−4×1019 cm−3; the distribution coefficient of tellurium was found to be 0.1. These layers exhibit a two to three times higher mobility than InP or GaAs doped to the same level. Theoretically calculated values of mobility taking account of the degenerate and nonparabolic conduction band conditions are compared with the experimental data.
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Optimisation of implantation conditions for the formation of buried SiO2 layers in silicon
  • Author(s): H. Mossadeq ; R.J. Bennett ; K.V. Anand
  • Source: Electronics Letters, Volume 18, Issue 5, p. 215 –216
  • DOI:  10.1049/el:19820147
  • Type: Article
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  • p. 215 –216 (2)
    The substrate temperature dependence of the IR transmission spectra of buried silicon dioxide layers formed by high dose ion implantation (~1017) was investigated for an ion dose ranging from 1017 to 1018 ions/cm2 at 250°C of 16O+ at 100 keV energy. The IR spectra indicate that the silicon/silicon-dioxide/silicon can be obtained after thermal annealing treatment of the implanted sample for 10 mm in hydrogen ambient at 1100°C.
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Electron-irradiated extrinsic silicon detectors for 3–5 μm focal-plane arrays
  • Author(s): E.F. Maher ; D.V. Eddolls ; B.R. Holeman ; R.G. Humphreys
  • Source: Electronics Letters, Volume 18, Issue 5, p. 216 –217
  • DOI:  10.1049/el:19820148
  • Type: Article
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  • p. 216 –217 (2)
    Electron-irradiated silicon photoconductors have been fabricated and characterised for focal-plane array applications. The photoresponse has a peak at 4 μm where Dλ* values of 2×1010 cm Hz½W−1 have been measured at 80 K. These characteristics are maintained to 100 K before thermal generation becomes significant. The devices are stable in processing and storage up to at least 100°C. Since no deep-level chemical dopants are involved, dedicated silicon processing facilities are not required
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Stable fan filter design using two-variable reactance functions
Temporal quantisation noise
  • Author(s): J.J. O'Reilly
  • Source: Electronics Letters, Volume 18, Issue 5, p. 219 –221
  • DOI:  10.1049/el:19820150
  • Type: Article
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  • p. 219 –221 (3)
    The temporal quantisation process inherent to certain waveform acquisition systems is examined and quantified. It is shown that increasing sample density (oversampling) is markedly more effective than signal averaging in reducing the influence of this impairment and that timebase quantisation resolution requirements usually exceed those for signal amplitude, although signal averaging can ameliorate this situation.
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Momentary look at noncircular monomode fibres
  • Author(s): R.A. Sammut
  • Source: Electronics Letters, Volume 18, Issue 5, p. 221 –222
  • DOI:  10.1049/el:19820151
  • Type: Article
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  • p. 221 –222 (2)
    It is suggested that the method of analysing inhomogeneous monomode fibres in terms of moments of the refractive-index profile can be generalised to provide a simple characterisation of noncircular fibres with arbitrary cross-sectional shape and refractive-index profile. For example, it is shown that the second mode cutoff in a rectangular fibre can be obtained directly from the corresponding result for a circular fibre.
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Adaptive prediction of an arma lattice
Fabrication and testing of a nickel-coated single-mode fibre magnetometer
  • Author(s): N. Hartman ; D. Vahey ; R. Kidd ; M. Browning
  • Source: Electronics Letters, Volume 18, Issue 5, p. 224 –225
  • DOI:  10.1049/el:19820153
  • Type: Article
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  • p. 224 –225 (2)
    A single-mode optical fibre was coated with nickel over its cladding using CVD. The thickness of nickel was greater than 90 μm along a 15 cm span. The phase sensitivity of light in the fibre was measured interferometrically and found to be 1.5 × 10−7 radian Oe−1 after a thermal anneal. The measured sensitivity is within an order of magnitude of values obtained using bulk nickel mandrels. A frequency roll-off of sensitivity was in evidence beyond several hundred hertz.
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Constrained LMS adaptive algorithm
Confocal Fabry–Perot sensor
  • Author(s): D.A. Jackson ; A.D. Kersey ; M. Corke
  • Source: Electronics Letters, Volume 18, Issue 5, p. 227 –229
  • DOI:  10.1049/el:19820155
  • Type: Article
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  • p. 227 –229 (3)
    The use of a spherical mirror Fabry–Perot (confocal) interferometer as an optical displacement sensor is described. The device incorporates a simple electronic servo to maintain the interferometer at an operating point of maximum sensitivity. Applications as vibration and acceleration sensors are forseen, with sensitivities for sinusoidal accelerations of 10−3 μg achievable at 10 Hz.
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Novel sampled-data MOS multiplier
  • Author(s): D. Brodarac ; D. Herbst ; B.J. Hosticka ; B. Hoefflinger
  • Source: Electronics Letters, Volume 18, Issue 5, p. 229 –230
  • DOI:  10.1049/el:19820156
  • Type: Article
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  • p. 229 –230 (2)
    In many analogue systems, such as correlators, adaptive filters, curve-fitting etc., analogue multipliers are required. However, common MOS multipliers do not match the performance of bipolar ones. In the letter, a new one-quadrant multiplier concept suitable for MOS systems applications is presented. The method is based on time-division concept and its building blocks are well known MOS subcircuits such as comparators, operational amplifiers, and current sources. The properties of the system are demonstrated using computer simulations.
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Correlation of 6 and 4 GHz depolarisation on slant paths
Influence of size and shape on reflection of surface acoustic waves by thin aluminium dots on lithium niobate
Novel method for predicting site diversity gain on satellite-to-ground radio paths
Combined dry and wet etching techniques to form planar (011) facets in GaInAsP/InP double heterostructures
  • Author(s): L.A. Coldren ; K. Furuya ; B.I. Miller ; J.A. Rentschler
  • Source: Electronics Letters, Volume 18, Issue 5, p. 235 –237
  • DOI:  10.1049/el:19820160
  • Type: Article
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  • p. 235 –237 (3)
    Using angled reactive ion etching (RIE) and wet chemical etching (WCE), planar (011) facets have been exposed on (100) GaInAsP/InP double heterostructures for the first time. Positively sloped wall profiles observed previously for this orientation are eliminated by an initial RIE that cuts through the stop-etching (111)A plane. These (011) mirror facets are preferred over (011) for most state-of-the-art low-threshold lasers.
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1.5 μm GaInAsP/InP buried heterostructure lasers fabricated by hybrid combination of liquid- and vapour-phase epitaxy
  • Author(s): O. Mikami ; H. Nakagome ; Y. Yamauchi ; H. Kanbe
  • Source: Electronics Letters, Volume 18, Issue 5, p. 237 –239
  • DOI:  10.1049/el:19820161
  • Type: Article
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  • p. 237 –239 (3)
    1.5 μm GaInAsP/InP buried heteostructure lasers been successfully fabricated by using a hybrid combination of liquid- (LPE) and vapour-phase epitaxy (VPE). Current confinement is achieved by the overgrown VPE high resistivity InP layer (electron concentration of less than 1015cm−3). A threshold current of about 85 mA is obtained for a cavity length of about 200 μm and an active layer width of 4 μm.
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280 Mbit/s single-mode fibre transmission with DFB laser diode emitting at 1.53 μm
  • Author(s): S. Yamamoto ; K. Utaka ; S. Akiba ; K. Sakai ; Y. Matsushima ; S. Sakaguchi ; N. Seki
  • Source: Electronics Letters, Volume 18, Issue 5, p. 239 –240
  • DOI:  10.1049/el:19820162
  • Type: Article
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  • p. 239 –240 (2)
    By using a distributed feedback buried heterostructure InGaAsP/InP laser diode emitting at 1.53 μm, 21.7 km single-mode fibre transmission at 280 Mbit/s was successfully carried out without any noticeable degradation In a waveform and an error rate. This result indicates that a long-haul optical telecommunication system with a repeater span of over 70 km is possible in the fibre low-loss region of 1.5 μm to 1.6 μm wavelength.
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Erratum: New ultra-low-noise avalanche photodiode with separated electron and hole avalanche regions
Erratum: Inductorless current conveyor allpass filter using grounded capacitors
Erratum: Measurement of mutual scattering between spheres by use of microwave open resonator

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