Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 18, Issue 24, 25 November 1982
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Volume 18, Issue 24
25 November 1982
Optoelectronic digital/analogue convertor-emitter
- Author(s): C.A. Ribeiro and F.C. de Prince
- Source: Electronics Letters, Volume 18, Issue 24, p. 1021 –1022
- DOI: 10.1049/el:19820699
- Type: Article
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In the letter the possibility is demonstrated of a simple optoelectronic device that can perform direct digital/analogue conversion and data transmission through optical links. The device consists of a DH laser with a special configuration of the contacts.
Temperature sensing in twisted single-mode fibres
- Author(s): D. Langeac
- Source: Electronics Letters, Volume 18, Issue 24, p. 1022 –1023
- DOI: 10.1049/el:19820700
- Type: Article
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Measurements of the temperature dependence of the elasto optically induced optical activity in twisted single-mode fibres are reported. A simple method for providing temperature-free twisted single-mode fibres has been derived and successfully tested. Furthermore, we have constructed and tested a temperature sensor showing excellent linearity over the tested 20–120°C range.
Low-loss quadruple-clad single-mode lightguides with dispersion below 2 ps/km nm over the 1.28 μm–1.65 μm wavelength range
- Author(s): L.G. Cohen ; W.L. Mammel ; S.J. Jang
- Source: Electronics Letters, Volume 18, Issue 24, p. 1023 –1024
- DOI: 10.1049/el:19820701
- Type: Article
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Low-loss fibres with dispersion below 2 ps/km nm over the spectral range between 1.28 μm and 1.65 μm have been designed and fabricated. These fibres were achieved by the use of quadruple cladding and designed with the use of a computer analysis program. They should be desirable for future wavelength-division-multiplexing applications.
Precise calibration of a rotary vane attenuator at 35 GHz using a homodyne network analyser
- Author(s): M.A. Wood
- Source: Electronics Letters, Volume 18, Issue 24, p. 1025 –1026
- DOI: 10.1049/el:19820702
- Type: Article
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A calibration technique for a homodyne network analyser, constructed in a waveguide, is described which is suitable for the calibration of the current UK national attenuation standards. The advantages of network analysis techniques over those currently used for attenuator calibrations at national standards level are described in detail.
Nonreciprocal circuit for laser-diode-to-single-mode-fibre coupling employing a YIG sphere
- Author(s): T. Sugie and M. Saruwatari
- Source: Electronics Letters, Volume 18, Issue 24, p. 1026 –1028
- DOI: 10.1049/el:19820703
- Type: Article
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A compact nonreciprocal optical circuit for laser-diode-to single-mode-fibre coupling using a YIG sphere is proposed in the 1.3 μm wavelength region. It is clarified that the YIG sphere can function as an effective Faraday rotator as well as a coupling lens. A high isolation value of more than 30 dB has been realised with coupling efficiency of −5.2 dB for a single-mode fibre.
Diode laser array excited star coupler suitable for Fibernet II
- Author(s): D.R. Scifres ; M.D. Bailey ; R.E. Norton ; R.D. Burnham ; E.G. Rawson
- Source: Electronics Letters, Volume 18, Issue 24, p. 1028 –1030
- DOI: 10.1049/el:19820704
- Type: Article
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18- and 100-port fibre-optic coupler systems are driven by 10 emitter laser arrays capable of CW output powers in excess of 500 mW/facet. This source has advantages over both LEDs and conventional laser diodes, including insensitivity to feedback, no modal noise, ease of coupling and a very high launched power per output fibre.
Uniaxially strained ZnO/SiO2/Si SAW resonators
- Author(s): S.J. Martin ; R.L. Gunshor ; R.F. Pierret ; G. Gorodetsky
- Source: Electronics Letters, Volume 18, Issue 24, p. 1030 –1031
- DOI: 10.1049/el:19820705
- Type: Article
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Surface-acoustic-wave (SAW) resonators fabricated on a ZnO/SiO2/Si layered medium have been cantilever-mounted. By deflecting the free end of the substrate, uniaxial biasing strains are induced in the SAW resonator. The effect of these static strains on resonant frequency and SAW phase velocity is assessed.
Observation of crosspolar effects using a microwave open resonator
- Author(s): D. Smith and L.J. Auchterlonie
- Source: Electronics Letters, Volume 18, Issue 24, p. 1031 –1032
- DOI: 10.1049/el:19820706
- Type: Article
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The occurrence of a crosspolar resonant field, generated from the interaction of a particle and the normal fundamental mode of a microwave open resonator, is reported. Results are presented for the cases where the scatterers are a short length of wire and simulated melting hailstones.
Automatic analysis of two-port active microwave network
- Author(s): S. Li and R.G. Bosisio
- Source: Electronics Letters, Volume 18, Issue 24, p. 1033 –1034
- DOI: 10.1049/el:19820707
- Type: Article
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A new six-port ANA technique and its application in analysing an active microwave network are discussed. The reported isolated dual-six-port ANA (IDSPNA) provides a simple and powerful means to determine any two-port network scattering matrix. Computer simulation and experimental results for MIC amplifiers are presented.
InGaAs enhancement-mode MISFETs using double-layer gate insulator
- Author(s): K. Ishii ; T. Sawada ; H. Ohno ; H. Hasegawa
- Source: Electronics Letters, Volume 18, Issue 24, p. 1034 –1036
- DOI: 10.1049/el:19820708
- Type: Article
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In this letter we describe the fabrication of enhancement-mode MISFETs on InGaAs grown by liquid-phase epitaxy (LPE) using an anodic Al2O3/anodic native oxide double layer as a gate insulator. The normally-off device of 10 μm gate length shows the effective channel mobility of 1400 cm2/Vs. The interface state density distribution of this double-layer MIS of InGaAs is also reported. The density of 2 × 1013 cm−2 eV−1 at Ec −0.057 eV and the minimum of 8 × 1011 cm−2 eV−1 near midgap are measured from C/V characteristics.
Fabrication of polarisation-maintaining fibres using gas-phase etching
- Author(s): R.D. Birch ; D.N. Payne ; M.P. Varnham
- Source: Electronics Letters, Volume 18, Issue 24, p. 1036 –1038
- DOI: 10.1049/el:19820709
- Type: Article
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A new fabrication technique for the production of high-birefringence fibres is described. The process is shown to produce fibres with a cross-sectional geometry which is close to the optimum predicted by stress analysis. As a result, fibres with extremely short beat lengths (0.55 mm at a wavelength of 633 nm) have been produced.
Enhancement of resist plasma erosion rates by electron-beam hardening
- Author(s): R.A. Morgan and C.J. Pollard
- Source: Electronics Letters, Volume 18, Issue 24, p. 1038 –1040
- DOI: 10.1049/el:19820710
- Type: Article
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A nonthermal method of hardening positive photoresists by means of a scanned high-energy electron beam in preference to direct resist heating is described. It has been established that moderate electron doses produce significant resist cross-linking without flow. Plasma etch resistance can be enhanced in the resists with no degradation of the as-developed line profile.
New runlength-limited and DC-free line code of minimum bandwidth
- Author(s): D.Y. Kim and J.K. Kim
- Source: Electronics Letters, Volume 18, Issue 24, p. 1040 –1041
- DOI: 10.1049/el:19820711
- Type: Article
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A new pseudoternary code suitable for data transmission over AC-coupled channels is proposed. It is a new variation of the modified duobinary code. The basic properties of eye width and power spectrum are shown to be better than those of the previous code of similar characteristics.
Spatial distribution of hot electrons as a physical limit to MOS transistor performance
- Author(s): S. Schmitt-Landsiedel and G. Dorda
- Source: Electronics Letters, Volume 18, Issue 24, p. 1041 –1043
- DOI: 10.1049/el:19820712
- Type: Article
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The spatial distribution of the free carriers in the channel of a MOS transistor is changed in the hot-electron regime. There the electron distance from the oxide is enlarged, causing a reduction of gate capacitance and transistor current. This is a physical limit to the performance of MOSFETs with short channels and thin gate oxides.
First-order design method and experimental results for microstrip surface circulators with external matching circuits
- Author(s): P.S. Hall ; C.J. Prior ; P.A. Ramsdale
- Source: Electronics Letters, Volume 18, Issue 24, p. 1043 –1044
- DOI: 10.1049/el:19820713
- Type: Article
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Experimental results are presented for a microstrip below-surface circulator which indicates that it can have a comparable performance to conventional types, and can thus be used to form a low-cost device suitable for use in thick-film MICs. Simple design expressions for the surface circulator based on quasistatic estimates are also presented.
Viscosity and optical measurement on fluoride glasses
- Author(s): H. Poignant and D.C. Tran
- Source: Electronics Letters, Volume 18, Issue 24, p. 1044 –1046
- DOI: 10.1049/el:19820714
- Type: Article
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Scattering loss and viscosity against temperature measurements have been carried out on fluoride glasses. The results indicate for the first time a λ-4 behaviour for scattering loss in the 0.45–0.75 μm wavelength range. Activation energies for viscous flow were found to be similar for both ZrF4− and HfF4−based glasses.
Rayleigh scattering in ZrF4-based glasses
- Author(s): D.C. Tran ; G.H. Sigel ; K.H. Levin ; R.J. Ginther
- Source: Electronics Letters, Volume 18, Issue 24, p. 1046 –1048
- DOI: 10.1049/el:19820715
- Type: Article
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Light scattering in a 51.53 ZrF4 - 20.47 BaF2 - 5.27 LaF3 - 3.24 AlF3 - 19.49 LiF glass was investigated for the first time both as a function of wavelength and of angular distribution. The measured total scatter loss exhibits a characteristic Ray-leigh λ-4 dependence. The total scattering attenuation coefficient has been reduced to that of the best synthetic silica, and nearly reaches the theoretically predicted minimum.
Fast method for calculating cutoff frequencies in single-mode fibres with arbitrary index profiles
- Author(s): P.Y.P. Chen
- Source: Electronics Letters, Volume 18, Issue 24, p. 1048 –1049
- DOI: 10.1049/el:19820716
- Type: Article
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A Cheby̅shev power-series approach is used for cutoff frequencies of the second mode in fibres with arbitrary refractive-index profiles. The method is fast because only a small number of terms is required to give high accuracy. A feature of this approach is that measured profiles can be used directly without being first converted to any specific forms. Examples are given as illustrations.
Switching behaviour of Al2O3-n GaAs MISFETs
- Author(s): W.S. Lee and J.G. Swanson
- Source: Electronics Letters, Volume 18, Issue 24, p. 1049 –1051
- DOI: 10.1049/el:19820717
- Type: Article
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The switching behaviour of plasma alumina-n GaAs IGFETs is described in quasi normally-off and deep depletion modes. The observations of recovery from the off-state suggest that in each case this is controlled by the thermal generation of minority carriers.
Characteristics of annular-ring microstrip antenna
- Author(s): J.S. Dahele and K.F. Lee
- Source: Electronics Letters, Volume 18, Issue 24, p. 1051 –1052
- DOI: 10.1049/el:19820718
- Type: Article
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The characteristics of an annular-ring microstrip antenna operating in TM11 and TM12 modes are determined experimentally. Our results confirm the main conclusions of a theoretical study published recently by Ali, Chew and Kong and show that: (a) the bandwidth of the TM11 mode is very small while that of the TM12 mode is relatively large, and (b) the lauching efficiency of the TM12 mode is highly sensitive to the feed position while that of the TM11 mode is virtually independent of the feed position.
Use of low dielectric constant substrates for microstrip time-delay triggered TRAPATT oscillators
- Author(s): N. Nazoa-Ruiz and C.S. Aitchison
- Source: Electronics Letters, Volume 18, Issue 24, p. 1052 –1054
- DOI: 10.1049/el:19820719
- Type: Article
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Our experimentation with microstrip trapatt oscillators of the type described by Davies et al.1 has indicated that the feasibility of such a design is dependent on the ratio of strip width to dielectric height (W/h) for the substrate used for a given microstrip-line impedance. For example, realisation on a polyguide substrate (εr = 2.32) of 1.58 mm height failed to give coherent oscillation due to unexpected transient voltage variations shown up by time-domain-reflectometry tests. However, simple modifications to the microstrip design to remove the transient voltage variations led to considerable improvement in the performance of the oscillator, and coherent behaviour was then obtained.
Optical gain measurements of 1.3 μm In1−xGaxAsyP1−yAs function of injected current density
- Author(s): F.C. Prince ; T.J.S. Mattos ; N.B. Patel
- Source: Electronics Letters, Volume 18, Issue 24, p. 1054 –1055
- DOI: 10.1049/el:19820720
- Type: Article
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We have measured the gain coefficient of 1.3 μm InGaAsP as a function of injected current density by measuring the spectra of amplified spontaneous emission as a function of excited length, using a laser device in which the p contact was divided into eight segments that can be pumped independently. We found a linear behaviour of the gain peak against injected current density up to gain values of 180 cm−1.
BSO/fibre-optic voltmeter with excellent temperature stability
- Author(s): Y. Kuhara ; Y. Hamasaki ; A. Kawakami ; Y. Murakami ; M. Tatsumi ; H. Takimoto ; K. Tada ; T. Mitsui
- Source: Electronics Letters, Volume 18, Issue 24, p. 1055 –1056
- DOI: 10.1049/el:19820721
- Type: Article
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A new BSO/fibre-optic voltmeter for measurement of AC voltage from 0 to 500 V has been successfully developed for practical use in various fields. This voltmeter has been given outstanding temperature stability of within ± 0.2% from −10°C to 85°C by using the electro-optic effect of a 4.7 mm-thick Bi12SiO20.
Enhancement of electron velocity in modulation-doped (Al,Ga)As/GaAs FETs at cryogenic temperatures
- Author(s): T.J. Drummond ; S.L. Su ; W.G. Lyons ; R. Fischer ; W. Kopp ; H. Morkoç ; K. Lee ; M.S. Shur
- Source: Electronics Letters, Volume 18, Issue 24, p. 1057 –1058
- DOI: 10.1049/el:19820722
- Type: Article
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High-performance normally-off modulation-doped (Al,Ga)As/GaAs field-effect transistors with a 1 μm gate length were fabricated and characterised. The transconductance obtained was 225 mS/mm at 300 K and 400 mS/mm at 77 K, leading to intrinsic transconductances (zero source resistance) of 305 and 565 mS/mm at 300 and 77 K, respectively. Since the device performance in short-gate transistors is limited by the electron saturation velocity, the increasing transconductance observed as the device is cooled is due to an increase in the electron velocity from about 2×107 cm/s to 3×107 cm/s. These velocities are inferred from a model developed for modulation-doped transistors and are predicted by pulse measurements in similar structures.
Polarisation stability in long lengths of monomode fibre
- Author(s): R.A. Harmon
- Source: Electronics Letters, Volume 18, Issue 24, p. 1058 –1060
- DOI: 10.1049/el:19820723
- Type: Article
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Polarisation stability tests have been carried out on various monomode fibres of up to 31.6 km in length, none of which has been designed to have polarisation-retaining properties. The state of polarisation at the fibre output was found to change very little over a test period of 96 h.
Crosspolar levels of ring arrays in reflection at 45° incidence: influence of lattice spacing
- Author(s): R. Cahill and E.A. Parker
- Source: Electronics Letters, Volume 18, Issue 24, p. 1060 –1061
- DOI: 10.1049/el:19820724
- Type: Article
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The importance of the lattice spacing is illustrated by the performance of three arrays of simple rings arranged on square lattices with 2r/D = 0.61, 0.64 and 0.87, used as frequency selective surfaces in a 45° incidence diplexer. Peak crosspolar levels were about −35 dB for the closely spaced lattice, rising to −24 dB at the upper band edge for the widest spacing, for which the reflection band centres were not coincident for E- and H-plane incidence.
Comment: Parasitic insensitive toggle switched capacitor and its applications to switched capacitor networks
- Author(s): F. Maloberti and F. Montecchi
- Source: Electronics Letters, Volume 18, Issue 24, page: 1061 –1061
- DOI: 10.1049/el:19820725
- Type: Article
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Attenuation measurements on single pieces of fibre and extrapolation over longer distances
- Author(s): G. Cancellieri
- Source: Electronics Letters, Volume 18, Issue 24, p. 1062 –1063
- DOI: 10.1049/el:19820726
- Type: Article
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An experimental technique is presented in order to separate the contributions of the intrinsic attenuation and of the fibre perturbation. This appears useful for extrapolating attenuation measurements performed on single pieces of fibres, and moreover for optimisation procedures in cable manufacturing processes.
Erratum: Transverse current on strip dipole antenna
- Author(s): A.D. Wunsch
- Source: Electronics Letters, Volume 18, Issue 24, page: 1063 –1063
- DOI: 10.1049/el:19820727
- Type: Article
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Erratum: Self-locating elliptically cored fibre with an accessible guiding region
- Author(s): R.B. Dyott and P.F. Schrank
- Source: Electronics Letters, Volume 18, Issue 24, page: 1063 –1063
- DOI: 10.1049/el:19820728
- Type: Article
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