Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 18, Issue 17, 19 August 1982
Volumes & issues:
-
Volume 59 (2023)
-
Volume 58 (2022)
-
Volume 57 (2021)
-
Volume 56 (2020)
-
Volume 55 (2019)
-
Volume 54 (2018)
-
Volume 53 (2017)
-
Volume 52 (2016)
-
Volume 51 (2015)
-
Volume 50 (2014)
-
Volume 49 (2013)
-
Volume 48 (2012)
-
Volume 47 (2011)
-
Volume 46 (2010)
-
Volume 45 (2009)
-
Volume 44 (2008)
-
Volume 43 (2007)
-
Volume 42 (2006)
-
Volume 41 (2005)
-
Volume 40 (2004)
-
Volume 39 (2003)
-
Volume 38 (2002)
-
Volume 37 (2001)
-
Volume 36 (2000)
-
Volume 35 (1999)
-
Volume 34 (1998)
-
Volume 33 (1997)
-
Volume 32 (1996)
-
Volume 31 (1995)
-
Volume 30 (1994)
-
Volume 29 (1993)
-
Volume 28 (1992)
-
Volume 27 (1991)
-
Volume 26 (1990)
-
Volume 25 (1989)
-
Volume 24 (1988)
-
Volume 23 (1987)
-
Volume 22 (1986)
-
Volume 21 (1985)
-
Volume 20 (1984)
-
Volume 19 (1983)
-
Volume 18 (1982)
-
Volume 17 (1981)
-
Volume 16 (1980)
-
Volume 15 (1979)
-
Volume 14 (1978)
-
Volume 13 (1977)
-
Volume 12 (1976)
-
Volume 11 (1975)
-
Volume 10 (1974)
-
Volume 9 (1973)
-
Volume 8 (1972)
-
Volume 7 (1971)
-
Volume 6 (1970)
-
Volume 5 (1969)
-
Volume 4 (1968)
-
Volume 3 (1967)
-
Volume 2 (1966)
-
Volume 1 (1965)
Volume 18, Issue 17
19 August 1982
Low-loss fibres by a pressurised MCVD method
- Author(s): E. Modone ; G. Parisi ; G. Roba
- Source: Electronics Letters, Volume 18, Issue 17, p. 721 –722
- DOI: 10.1049/el:19820489
- Type: Article
- + Show details - Hide details
-
p.
721
–722
(2)
Low-loss (α=0.35 dB/km at λ=1580 nm) and high-numerical-aperture (NA=0.23) graded-index optical fibres have been obtained by an improved MCVD method. These fibres have a silica cladding and a germania-doped silica core realised by very-high-temperature deposition conditions.
Transfer functions of wave-digital filters
- Author(s): E.C. Tan
- Source: Electronics Letters, Volume 18, Issue 17, p. 722 –724
- DOI: 10.1049/el:19820490
- Type: Article
- + Show details - Hide details
-
p.
722
–724
(3)
The letter presents a numerical algorithm for computing the polynomial coefficients of the transfer functions of a class of wave-digital filters derived from all-pole reference filters, given the multiplier coefficients.
Ultrabroadband balanced fin-line mixer
- Author(s): W. Menzel and H. Callsen
- Source: Electronics Letters, Volume 18, Issue 17, p. 724 –725
- DOI: 10.1049/el:19820491
- Type: Article
- + Show details - Hide details
-
p.
724
–725
(2)
An ultrabroadband balanced fin-line mixer for Ka-band frequencies covering more than one waveguide band is described. The extraordinary feature of this mixer is the IF bandwidth of 15 GHz, which can be extended up to and beyond 18 GHz. A description of the circuit and its performance is given.
Design parameters for dispersion-shifted triangular-profile single-mode fibres
- Author(s): K.I. White
- Source: Electronics Letters, Volume 18, Issue 17, p. 725 –727
- DOI: 10.1049/el:19820492
- Type: Article
- + Show details - Hide details
-
p.
725
–727
(3)
The performance of dispersion-shifted triangular- and step-index-profile fibres is compared. It is predicted that operation near a V-value of half the cutoff value gives a fibre that has low splice loss, low cabling loss and low additional loss due to Rayleigh scattering from the doped core. At this V-value, triangular and step fibres have similar propagation properties. Thus, the lower fabrication loss resulting from the graded core/cladding boundary of the triangular profile fibre is achieved without detriment to any other parameter.
Use of incoherent light for annealing implanted Si wafers and growing single-crystal Si on SiO2
- Author(s): M. Haond and D.P. Vu
- Source: Electronics Letters, Volume 18, Issue 17, p. 727 –728
- DOI: 10.1049/el:19820493
- Type: Article
- + Show details - Hide details
-
p.
727
–728
(2)
By using halogen lamps, we have annealed implanted Si wafers and recrystallised deposited poly-Si. A transient anneal was accomplished with a good uniformity on 4 in Si wafers with no redistribution of the dopant profile. By using a shaped spot, we obtained 〈100〉 single-crystal Si, over an area 2 mm by several centimetres, on a SiO2 layer grown on a Si substrate, without seeding.
Simple method for obtaining the equations of switched-capacitor circuits
- Author(s): Y. Tsividis and S.C. Fang
- Source: Electronics Letters, Volume 18, Issue 17, p. 728 –729
- DOI: 10.1049/el:19820494
- Type: Article
- + Show details - Hide details
-
p.
728
–729
(2)
A systematic method for writing the time-domain equations of switched-capacitor circuits is presented. By following four well-defined steps, as many linearly independent equations are obtained as there are capacitors in the circuit. The method is especially well suited for hand analysis, and relies on the intuitively appealing concept of identifying physical regions where charge is trapped.
RCS diagram records processing in Cheby̅shev space
- Author(s): J. Saillard
- Source: Electronics Letters, Volume 18, Issue 17, p. 729 –731
- DOI: 10.1049/el:19820495
- Type: Article
- + Show details - Hide details
-
p.
729
–731
(3)
In the case of optical approximation, when we process, in Cheby̅shev polynomial space, a record of diffracted power produced by a real structure formed by scatterers having isotropic RCS diagrams, in order to obtain its power spectrums, some new lines appear, which a previously proposed model (i.e. independent scatterers) ignored. In the letter we show that the principal explanation of the phenomena is the double reflection of an element of structure on another element.
Optical fibre coating speed prediction from flow properties of coating materials
- Author(s): M. Wagatsuma ; T. Kimura ; Y. Shuto ; S. Yamakawa
- Source: Electronics Letters, Volume 18, Issue 17, p. 731 –732
- DOI: 10.1049/el:19820496
- Type: Article
- + Show details - Hide details
-
p.
731
–732
(2)
A prediction method of the maximum coating speed of a coating material has been proposed. The maximum smooth coating speed at which the coating thickness fluctuation begins to increase can be predicted from a critical shear rate value at which the flow curve, measured by a viscometer, deviates from a power law.
Leaky SAW velocity on water/silicon boundary measured by acoustic line-focus beam
- Author(s): J. Kushibiki ; K. Horii ; N. Chubachi
- Source: Electronics Letters, Volume 18, Issue 17, p. 732 –734
- DOI: 10.1049/el:19820497
- Type: Article
- + Show details - Hide details
-
p.
732
–734
(3)
Propagation characteristics of leaky SAWs at the boundary of water/silicon are investigated by the nonscanning reflection acoustic microscope using a line-focus beam. Experiments are performed for typical crystalline planes of silicon such as (111), (110), (001) and slightly inclined (111). These results obtained by the line-focus beam are compared to the experimental results obtained by the conventional point-focus beam.
Parasitic insensitive toggle-switched capacitor and its applications to switched-capacitor networks
- Author(s): J.C.M. Bermudez and B.B. Bhattacharyya
- Source: Electronics Letters, Volume 18, Issue 17, p. 734 –736
- DOI: 10.1049/el:19820498
- Type: Article
- + Show details - Hide details
-
p.
734
–736
(3)
A new parasitic insensitive toggle-switched-capacitor scheme is presented along with its applications to the synthesis of switched-capacitor networks. The scheme can be used to obtain a recently reported5 first-order inverting bilinearly transformed transfer function. The advantage of this technique is that, for the realisation of a lowpass filter, it requires only three capacitors and no matching conditions.
Wave propagation in transversely inhomogeneous dielectric waveguide
- Author(s): P.Y.P. Chen
- Source: Electronics Letters, Volume 18, Issue 17, p. 736 –737
- DOI: 10.1049/el:19820499
- Type: Article
- + Show details - Hide details
-
p.
736
–737
(2)
The problem of guided mode propagation in inhomogeneous dielectric waveguides is solved by a Cheby̅shev-like economised power-series approach. The formulation involved is shown to be quite simple. Numerical examples using a ‘Pöschl-Teller’ medium demonstrate the accuracy of this approach.
Large-signal operation of PIN IMPATT diodes for pulsed oscillators at millimetre-wave frequencies
- Author(s): M. Claassen and W. Harth
- Source: Electronics Letters, Volume 18, Issue 17, p. 737 –739
- DOI: 10.1049/el:19820500
- Type: Article
- + Show details - Hide details
-
p.
737
–739
(3)
The specific RF power generation mechanism of PIN-IMPATT diodes at high current density as applied in pulsed operation is described and confirmed by a realistic computer model. It is shown that these devices can be operated at large-signal avalanche resonance, where they deliver relatively high output power at high impedance level.
FIR filter for generating multilevel signals from single-bit noise sequences
- Author(s): J.R. Jordan and B. Kiani-Shabestari
- Source: Electronics Letters, Volume 18, Issue 17, p. 739 –740
- DOI: 10.1049/el:19820501
- Type: Article
- + Show details - Hide details
-
p.
739
–740
(2)
A ROM-based circuit is described for the implementation of finite-impulse-response (FIR) filters used to generate multilevel Gaussian noise signals from pseudorandom binary noise signals. A particular advantage of the circuit is that it can be constructed from readily available, standard components.
Efficient waveguide Bragg-deflection grating on LiNbO3
- Author(s): E.Y.B. Pun ; K.K. Wong ; I. Andonovic ; P.J.R. Laybourn ; R.M. de la Rue
- Source: Electronics Letters, Volume 18, Issue 17, p. 740 –742
- DOI: 10.1049/el:19820502
- Type: Article
- + Show details - Hide details
-
p.
740
–742
(3)
An efficient Bragg-deflection grating on x-cut LiNbO3, using proton exchange in benzoic acid through an aluminium grating mask, has been demonstrated. A deflection efficiency of 90% has been measured.
InP high mobility enhancement MISFETs using anodically grown double-layer gate insulator
- Author(s): T. Sawada and H. Hasegawa
- Source: Electronics Letters, Volume 18, Issue 17, p. 742 –743
- DOI: 10.1049/el:19820503
- Type: Article
- + Show details - Hide details
-
p.
742
–743
(2)
High-mobility InP enhancement MISFETs are fabricated with the use of a novel double-layer gate insulator consisting of Al2O3 and native oxide, both grown anodically by a simple process. Applying a fairly high-temperature annealing (400°C), channel mobilities of 1500–3000 cm2/Vs and a large reduction of drain current drift are achieved.
Second-order recursive digital filter that is free from all constant-input limit cycles
- Author(s): L.E. Turner
- Source: Electronics Letters, Volume 18, Issue 17, p. 743 –745
- DOI: 10.1049/el:19820504
- Type: Article
- + Show details - Hide details
-
p.
743
–745
(3)
A second-order recursive digital filter structure that is suitable for implementing bandpass digital filters by cascading second-order sections is proven to be free from all constant-input limit cycles. This filter is derived from a structure proposed by Meerkütter and Wegener and requires no additional components.
Room-temperature operation of a transverse-distributed-feedback cavity laser
- Author(s): I. Suemune ; M. Kohno ; M. Yamanishi
- Source: Electronics Letters, Volume 18, Issue 17, p. 745 –746
- DOI: 10.1049/el:19820505
- Type: Article
- + Show details - Hide details
-
p.
745
–746
(2)
A new type of transverse-distributed-feedback cavity laser is proposed. A threshold current of a two-dimensional mode is 190 mA, and an output power of 30 mW is obtained at 1.5Ith. The far-field pattern is stable up to a measured current of 2.1Ith.
Experiences with an optical long-haul 2.24 Gbit/s transmission system at a wavelength of 1.3 μm
- Author(s): W. Albrecht ; G. Elze ; B. Enning ; G. Walf ; G. Wenke
- Source: Electronics Letters, Volume 18, Issue 17, p. 746 –748
- DOI: 10.1049/el:19820506
- Type: Article
- + Show details - Hide details
-
p.
746
–748
(3)
The letter describes the problems which occurred in the course of the implementation of an experimental optical transmission system which operates at a bit rate of 2.24 Gbit/s over 21 km of single-mode fibre with commercially available optoelectronic components. The laser wavelength is 1.3 μm.
Improved six-port circuit for complex reflection coefficient measurements
- Author(s): J.A. Dobrowolski
- Source: Electronics Letters, Volume 18, Issue 17, p. 748 –750
- DOI: 10.1049/el:19820507
- Type: Article
- + Show details - Hide details
-
p.
748
–750
(3)
A new improved six-port circuit for complex reflection coefficient measurements is presented. It consists of two six-port directional couplers. Assuming the components to be ideal, it is shown that the described six-port circuit has optimal properties for accurate determination of complex reflection coefficients. A six-port branchline coupler is briefly described.
GaAlAs-GaAs ballistic hetero-junction bipolar transistor
- Author(s): D. Ankri and L.F. Eastman
- Source: Electronics Letters, Volume 18, Issue 17, p. 750 –751
- DOI: 10.1049/el:19820508
- Type: Article
- + Show details - Hide details
-
p.
750
–751
(2)
A novel heterojunction bipolar transistor structure is proposed using the ballistic electron motion concept. Electrons which surmount the conduction band spike barrier (<ΔEΓ−L) are accelerated into the base at higher velocities than the diffusion velocity. Calculations derived from a drift-diffusion emission model illustrate the trade-off possible between the injection efficiency and the electron velocity through the base.
Processing of titanium films on silicon using a multiscanned electron beam
- Author(s): E.A. Maydell-Ondrusz ; P.L.F. Hemment ; K.G. Stephens ; S. Moffat
- Source: Electronics Letters, Volume 18, Issue 17, p. 752 –754
- DOI: 10.1049/el:19820509
- Type: Article
- + Show details - Hide details
-
p.
752
–754
(3)
A multiscanned electron beam has been used to process titanium films thermally on single-crystal silicon. The redistribution of titanium and the composition of the processed films were studied by Rutherford backscattering. Oxygen contamination within the titanium is found to control the reaction rate. Processing conditions have been established which give stoichiometric TiSi2 layers and the removal of oxygen from the system. These results have been confirmed by Auger analysis and the surface texture has been examined using scanning electron microscopy.
Sensitivity of principal phases
- Author(s): R.W. Daniel
- Source: Electronics Letters, Volume 18, Issue 17, p. 754 –755
- DOI: 10.1049/el:19820510
- Type: Article
- + Show details - Hide details
-
p.
754
–755
(2)
It is shown that the principal phases of a square nonsingular transfer-function matrix are insensitive to small additive perturbations. This is an important result for the frequency-response analysis and design of multivariable control systems.
Low-resistance ohmic contacts to p-InP
- Author(s): C.L. Cheng ; L.A. Coldren ; B.I. Miller ; J.A. Rentschler ; C.C. Shen
- Source: Electronics Letters, Volume 18, Issue 17, p. 755 –756
- DOI: 10.1049/el:19820511
- Type: Article
- + Show details - Hide details
-
p.
755
–756
(2)
A new method for making low-resistance ohmic contacts to p-InP is described. Using layer-by-layer evaporated Au-Zn (25 wt% net Zn)/Cr/Au metallisation, specific contact resistance as low as 4.5 × 10−5 Ωcm2 was obtained for p-InP with carrier concentration 2 × 1018 cm−3. The effects of annealing temperature and time on the contact resistances were investigated.
Most viewed content for this Journal
Article
content/journals/el
Journal
5
Most cited content for this Journal
-
Extreme multistability in a memristive circuit
- Author(s): Bo-Cheng Bao ; Quan Xu ; Han Bao ; Mo Chen
- Type: Article
-
Absorptive frequency selective surface using parallel LC resonance
- Author(s): Qiang Chen ; Liguo Liu ; Liang Chen ; Jiajun Bai ; Yunqi Fu
- Type: Article
-
Partial spectral search-based DOA estimation method for co-prime linear arrays
- Author(s): Fenggang Sun ; Peng Lan ; Bin Gao
- Type: Article
-
Experimental verification of on-chip CMOS fractional-order capacitor emulators
- Author(s): G. Tsirimokou ; C. Psychalinos ; A.S. Elwakil ; K.N. Salama
- Type: Article
-
54 Gbit/s OOK transmission using single-mode VCSEL up to 2.2 km MMF
- Author(s): G. Stepniak ; A. Lewandowski ; J.R. Kropp ; N.N. Ledentsov ; V.A. Shchukin ; N. Ledentsov Jr. ; G. Schaefer ; M. Agustin ; J.P. Turkiewicz
- Type: Article
