Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 18, Issue 14, 8 July 1982
Volumes & issues:
-
Volume 59 (2023)
-
Volume 58 (2022)
-
Volume 57 (2021)
-
Volume 56 (2020)
-
Volume 55 (2019)
-
Volume 54 (2018)
-
Volume 53 (2017)
-
Volume 52 (2016)
-
Volume 51 (2015)
-
Volume 50 (2014)
-
Volume 49 (2013)
-
Volume 48 (2012)
-
Volume 47 (2011)
-
Volume 46 (2010)
-
Volume 45 (2009)
-
Volume 44 (2008)
-
Volume 43 (2007)
-
Volume 42 (2006)
-
Volume 41 (2005)
-
Volume 40 (2004)
-
Volume 39 (2003)
-
Volume 38 (2002)
-
Volume 37 (2001)
-
Volume 36 (2000)
-
Volume 35 (1999)
-
Volume 34 (1998)
-
Volume 33 (1997)
-
Volume 32 (1996)
-
Volume 31 (1995)
-
Volume 30 (1994)
-
Volume 29 (1993)
-
Volume 28 (1992)
-
Volume 27 (1991)
-
Volume 26 (1990)
-
Volume 25 (1989)
-
Volume 24 (1988)
-
Volume 23 (1987)
-
Volume 22 (1986)
-
Volume 21 (1985)
-
Volume 20 (1984)
-
Volume 19 (1983)
-
Volume 18 (1982)
-
Volume 17 (1981)
-
Volume 16 (1980)
-
Volume 15 (1979)
-
Volume 14 (1978)
-
Volume 13 (1977)
-
Volume 12 (1976)
-
Volume 11 (1975)
-
Volume 10 (1974)
-
Volume 9 (1973)
-
Volume 8 (1972)
-
Volume 7 (1971)
-
Volume 6 (1970)
-
Volume 5 (1969)
-
Volume 4 (1968)
-
Volume 3 (1967)
-
Volume 2 (1966)
-
Volume 1 (1965)
Volume 18, Issue 14
8 July 1982
Analysis of printed transmission lines for monolithic integrated circuits
- Author(s): Y.C. Shih and T. Itoh
- Source: Electronics Letters, Volume 18, Issue 14, p. 585 –586
- DOI: 10.1049/el:19820401
- Type: Article
- + Show details - Hide details
-
p.
585
–586
(2)
Planar transmission lines formed with MIS and Schottky barrier contacts are analysed based on the spectral domain technique. Depending on the frequency and the resistivity of the substrates, three different types of fundamental modes are predicted. The calculated slow-wave factors and attenuation constants agree well with experimental results.
Lens aberration effect on a laser-diode-to-single-mode-fibre coupler
- Author(s): M. Sumida and K. Takemoto
- Source: Electronics Letters, Volume 18, Issue 14, p. 586 –587
- DOI: 10.1049/el:19820402
- Type: Article
- + Show details - Hide details
-
p.
586
–587
(2)
The ball lens aberration effect has been analysed on a laser-diode-to-single-mode-fibre coupler. The analysis derived valuable relations between coupling efficiency and lens parameters of refractive index and focal length. Coupling efficiency of about 50% can be obtained for couplers which employ ball lenses with high refractive index.
Analysis of SAW attenuation measurement using acoustic microscopy
- Author(s): K. Yamanaka
- Source: Electronics Letters, Volume 18, Issue 14, p. 587 –589
- DOI: 10.1049/el:19820403
- Type: Article
- + Show details - Hide details
-
p.
587
–589
(3)
Effect of acoustic loss in solids on depths of dips in V(z) curves obtained by reflection acoustic microscopy was calculated. The results were in good agreement with the observed V(z) curves of steels. The applicability and limitations of measuring attenuation of surface acoustic waves from V(z) curves are discussed.
Analysis of slow-wave phenomena in coplanar waveguide on a semiconductor substrate
- Author(s): Y. Fukuoka and T. Itoh
- Source: Electronics Letters, Volume 18, Issue 14, p. 589 –590
- DOI: 10.1049/el:19820404
- Type: Article
- + Show details - Hide details
-
p.
589
–590
(2)
Slow-wave characteristics of a coplanar waveguide with substrate resistivity are analysed using the mode-matching technique. This waveguide is suitable for microwave monolithic integrated circuits because of its coplanar configuration. Numerical results are presented and compared with an experimental measurement in the literature.
Anomalous effect of carriers on dielectric constant of (In,Ga)(As,P) lasers operating at 1.3 μm wavelength
- Author(s): S.E.H. Turley
- Source: Electronics Letters, Volume 18, Issue 14, p. 590 –592
- DOI: 10.1049/el:19820405
- Type: Article
- + Show details - Hide details
-
p.
590
–592
(3)
Injected carriers were found to reduce the dielectric constant of the active layer by the unexpectedly high value of 0.4. This is a factor of approximately four greater than measured for GaAs/(Ga, Al)As lasers and also higher than other reported values for (In,Ga)(As,P) lasers operating at a wavelength of 1.6 μm. The technique employed was the observation of the spectral shift of individual Fabry-Perot modes of oxide insulated stripe lasers down to very low currents below threshold.
Below 20 ps/gate operation with GaAs SAINT FETs at room temperature
- Author(s): K. Yamasaki ; Y. Yamane ; K. Kurumada
- Source: Electronics Letters, Volume 18, Issue 14, p. 592 –593
- DOI: 10.1049/el:19820406
- Type: Article
- + Show details - Hide details
-
p.
592
–593
(2)
Room-temperature ring oscillation at 19.6 ps/gate has been accomplished with SAINT FETs using bulk GaAs and implantation. These results have been obtained along with extrinsic resistance reduction and capacitance reduction by taking full advantage of the n+-gate spacing controllability.
High-efficiency blue luminescence from MOCVD-grown ZnSe at room temperature
- Author(s): D.R. Wight ; P.J. Wright ; B. Cockayne
- Source: Electronics Letters, Volume 18, Issue 14, p. 593 –594
- DOI: 10.1049/el:19820407
- Type: Article
- + Show details - Hide details
-
p.
593
–594
(2)
The cathodoluminescence properties of undoped ZnSe layers grown by MOCVD onto GaAs substrates have been studied. Intrinsic and extrinsic luminescence processes are observed at liquid nitrogen temperatures, and at room temperature luminescence is shown to result from band-to-band recombination. The external quantum efficiency for this blue luminescence at 300 K is estimated to be 0.1%, and an internal quantum efficiency as high as 30% is deduced from the result.
Measurement of radiative and auger recombination rates in p-type InGaAsP diode lasers
- Author(s): C.B. Su ; J. Schlafer ; J. Manning ; R. Olshansky
- Source: Electronics Letters, Volume 18, Issue 14, p. 595 –596
- DOI: 10.1049/el:19820408
- Type: Article
- + Show details - Hide details
-
p.
595
–596
(2)
Carrier lifetimes and spontaneous emission rates are reported for InGaAsP diode lasers. For active layers Zn-doped in the range 1−2 × 1018/cm3 the radiative recombination constant B is 0.8 × 10−10 cm3/s and the nonradiative constant C is 0.9 × 10−28 cm6/s for a Cnp2 Auger process. For lightly doped lasers the Auger model alone cannot explain the data.
Monolithic 2–20 GHz GaAs travelling-wave amplifier
- Author(s): Y. Ayasli ; L.D. Reynolds ; J.L. Vorhaus ; L. Hanes
- Source: Electronics Letters, Volume 18, Issue 14, p. 596 –598
- DOI: 10.1049/el:19820409
- Type: Article
- + Show details - Hide details
-
p.
596
–598
(3)
A two-stage monolithic GaAs travelling-wave amplifier operating in the 2–20 GHz frequency range with 12 dB flat gain is reported.
High-precision moulded connector for single-mode optical fibres
- Author(s): T. Yoshizawa ; T. Kurokawa ; S. Nara
- Source: Electronics Letters, Volume 18, Issue 14, p. 598 –599
- DOI: 10.1049/el:19820410
- Type: Article
- + Show details - Hide details
-
p.
598
–599
(2)
High-precision moulded connectors for single-mode optical fibres have been developed using accurate electroformed cavities. The accuracy of moulded ferrules was greatly improved to less than 1 μm by preparing a high-precision master and a strict moulding condition control. They had a low average connection loss of 0.48 dB and could be produced by a simple moulding process.
Amorphous-silicon silicon-nitride field-effect transistors
- Author(s): K. Katoh ; M. Yasui ; H. Watanabe
- Source: Electronics Letters, Volume 18, Issue 14, p. 599 –600
- DOI: 10.1049/el:19820411
- Type: Article
- + Show details - Hide details
-
p.
599
–600
(2)
n-channel and p-channel amorphous-silicon field-effect transistors have been fabricated on a glassy substrate using undoped and impurity-doped a-Si films as the semiconductor and silicon nitride deposited from an SiH4-N2 mixture as the gate insulator. A change in the source-drain conductance of greater than four orders of magnitude is realised by changing the gate potential from 0 to 5 V.
Solution to instability problems of grid-connected PWM DC-AC inverters
- Author(s): L. Bonte ; D. Baert ; J. Vandamme ; J. de Bilde ; W. Dhooghe
- Source: Electronics Letters, Volume 18, Issue 14, p. 600 –602
- DOI: 10.1049/el:19820412
- Type: Article
- + Show details - Hide details
-
p.
600
–602
(3)
The stability properties of the forward and the flyback inverter are compared. A free-running inverter is not suited for grid-connected applications. The realisation of a high open-circuit gain in a system with an externally determined switching frequency and without the loss of the power capacity is discussed. A 250 W low-distortion grid-connected forward inverter has been realised.
GaxIn1−xAsyP1−y/Gax′,In1−x′,Asy′,P1−y′, DH visible LED grown on (100) GaAs by LPE in the range of 670–680 nm
- Author(s): H. Kawanishi and M. Hiraoka
- Source: Electronics Letters, Volume 18, Issue 14, p. 602 –603
- DOI: 10.1049/el:19820413
- Type: Article
- + Show details - Hide details
-
p.
602
–603
(2)
GaxIn1−xAsyP1−y/Gax′,In1−x′,Asy′,P1−y′ visible light emission diodes (LED) are reported. The double heterostructures were grown on (100) GaAs substrates by a liquid phase epitaxial (LPE) growth technique from a source melt rich in phosphorus. The wavelength of emitted light was 670–680 nm at room temperature.
Stress difference in elliptically cladded fibres
- Author(s): Y. Ejiri ; Y. Namihira ; K. Mochizuki
- Source: Electronics Letters, Volume 18, Issue 14, p. 603 –605
- DOI: 10.1049/el:19820414
- Type: Article
- + Show details - Hide details
-
p.
603
–605
(3)
The normalised stress characteristics in elliptically cladded polarisation-maintaining single-mode (PMSM) fibres are obtained using the finite-element method (FEM). It is indicated that the normalised principal stress difference can be applied for almost all the elliptically cladded PMSM fibres.
Mutual coupling between microstrip antennas
- Author(s): E. Penard and J.-P. Daniel
- Source: Electronics Letters, Volume 18, Issue 14, p. 605 –607
- DOI: 10.1049/el:19820415
- Type: Article
- + Show details - Hide details
-
p.
605
–607
(3)
A theoretical study of mutual coupling between microstrip antennas is presented. The cavity method is used, and from the equivalence theorem application the problem is reduced to interaction of two magnetic loops. The mutual impedance is then calculated from the reaction theorem. Theoretical results and measurements are in good agreement.
Full-wave analysis of integrated transmission lines on layered lossy media
- Author(s): R. Sorrentino and G. Leuzzi
- Source: Electronics Letters, Volume 18, Issue 14, p. 607 –608
- DOI: 10.1049/el:19820416
- Type: Article
- + Show details - Hide details
-
p.
607
–608
(2)
Cohn's method of analysis of the slot line on a dielectric substrate is extended to the case of integrated lines on a lossy inhomogeneous substrate. The slow-wave characteristics of the metal-insulator-semiconductor coplanar waveguide for MMIC applications are calculated and found to be in good agreement with the experiments.
Suppression of unwanted self-focusing effects in nonlinear optical experiments using liquid crystal
- Author(s): M. Kawachi ; B.S. Kawasaki ; K.O. Hill
- Source: Electronics Letters, Volume 18, Issue 14, p. 609 –610
- DOI: 10.1049/el:19820417
- Type: Article
- + Show details - Hide details
-
p.
609
–610
(2)
It is demonstrated that undesired self-focusing of strong laser beams through a liquid crystal film can be suppressed by the application of an alternating voltage on the sample. Diffraction efficiencies greater than 10% for optically induced optical phase gratings in the liquid crystal are obtained when self-focusing has been suppressed.
Currents induced on a conducting halfplane by a plane wave at arbitrary incidence
- Author(s): G. Morris
- Source: Electronics Letters, Volume 18, Issue 14, p. 610 –613
- DOI: 10.1049/el:19820418
- Type: Article
- + Show details - Hide details
-
p.
610
–613
(4)
Based on Sommerfeld's exact solution for the diffraction of a uniform plane wave by a perfectly conducting halfplane, expressions are given for the current density induced on both sides of the plane for a wave arriving at a general angle of incidence. Polarisation of the incident wave both parallel and transverse to the edge is considered. For both polarisations, computed results are presented of the magnitude and phase of the induced currents on both sides of the plane; angles of incidence over the complete range 0° to 180° are considered.
Growth effects of In0.53Ga0.47As on InP structured substrates
- Author(s): N. Chand ; A.V. Syrbu ; P.A. Houston
- Source: Electronics Letters, Volume 18, Issue 14, p. 613 –614
- DOI: 10.1049/el:19820419
- Type: Article
- + Show details - Hide details
-
p.
613
–614
(2)
LPE growth studies of In0.53Ga0.47As on structured InP substrates orientated in the (100) and (111)B planes have been carried out. A reluctance to grow in the [111]A and [111]B directions has been found while nucleation readily occurs on (100) faces and rounded surfaces. Selective growth in etched channels was possible without masking.
Relation between power spectrum and phase spectrum of oscillators
- Author(s): P.R. Shepherd ; N. Faulkner ; E. Vilar ; P. Bradsell
- Source: Electronics Letters, Volume 18, Issue 14, p. 614 –615
- DOI: 10.1049/el:19820420
- Type: Article
- + Show details - Hide details
-
p.
614
–615
(2)
The single-sideband to carrier power ratio L(f) and the phase fluctuations spectral density Sδϕ(f) are two convenient means of characterising the spectral purity of oscillators, and, for low-modulation indices, numerically Sδϕ = 2L, the letter briefly reviews the fundamental concepts and extends the above relationship to any modulation depth. Theoretical results for frequency modulation by bandlimited white Gaussian noise are presented. Computations are discussed and dimensional aspects have been checked experimentally.
Fuzzy-measure justification of some grey-tone image experimental data
- Author(s): S.D. Bedrosian and W. Xie
- Source: Electronics Letters, Volume 18, Issue 14, p. 615 –616
- DOI: 10.1049/el:19820421
- Type: Article
- + Show details - Hide details
-
p.
615
–616
(2)
Theoretical results given in the letter agree with experimental data, indicating that an average observer distinguishes about 20 grey levels from a typical black and white image. A criterion based on fuzzy measures is presented. These results have important implications in medical and other applications requiring artifact minimisation.
Efficient adaptive linear predictor
- Author(s): G. Martinelli
- Source: Electronics Letters, Volume 18, Issue 14, p. 617 –618
- DOI: 10.1049/el:19820422
- Type: Article
- + Show details - Hide details
-
p.
617
–618
(2)
Linear predictors with the capability of exactly updating their internal parameters in correspondence to each time step have been recently introduced. It is shown in the present letter that their computational cost can be noticeably reduced by suitable simplifications without impairing their performance.
Low-threshold GRIN-SCH GaAs/GaAlAs laser structure grown by OM VPE
- Author(s): S. Hersee ; M. Baldy ; P. Assenat ; B. de Cremoux ; J.P. Duchemin
- Source: Electronics Letters, Volume 18, Issue 14, p. 618 –620
- DOI: 10.1049/el:19820423
- Type: Article
- + Show details - Hide details
-
p.
618
–620
(3)
The letter describes the characteristics of a graded-refractive-index (GRIN) separate-confinement-heterostructure (SCH) laser grown by organometallic vapour-phase-epitaxy (OM VPE). The structure has an average threshold current density of 410 A cm−2 for a chip size (190 μm × 392 μm) which decreases to 260 A cm−2 for a cavity length of 1352 μm. The structure has a T0 of between 154 and 171 K and an internal quantum efficiency of 90% ± 10%.
Numerical inversion of a class of Laplace transforms
- Author(s): C.P. Therapos and J.E. Diamessis
- Source: Electronics Letters, Volume 18, Issue 14, p. 620 –622
- DOI: 10.1049/el:19820424
- Type: Article
- + Show details - Hide details
-
p.
620
–622
(3)
Simple formulas are derived to invert a class of Laplace transforms and compute the maximum absolute error. Uniform convergence, simultaneously in the t and s domain is achieved by selecting the approximant's free parameters.
New method for approximating time-delay systems with delay-free systems
- Author(s): B. Maione and B. Turchiano
- Source: Electronics Letters, Volume 18, Issue 14, p. 622 –623
- DOI: 10.1049/el:19820425
- Type: Article
- + Show details - Hide details
-
p.
622
–623
(2)
A transfer function including a not too ‘large’ time delay is approximated with a transfer function characterised by only one stable, multiple pole. The approach is based on the Laguerre orthogonal function expansion of the impulse responses, corresponding to the given transfer function and the approximating one. The approach requires very limited computational effort to achieve a good approximation.
Automatic temperature mapping system based on holographic interferometry
- Author(s): G. Lucarini ; F. Piazza ; C. Morandi ; A. Pierfederici
- Source: Electronics Letters, Volume 18, Issue 14, p. 623 –624
- DOI: 10.1049/el:19820426
- Type: Article
- + Show details - Hide details
-
p.
623
–624
(2)
An automatic system for the acquisition and analysis of interference patterns has been constructed and used in conjunction with a holographic interferometer to study temperature distributions in cavities filled with homogeneous transparent media. System performances and typical experimental results are reported.
Current distribution on the elements of a square loop frequency selective surface
- Author(s): S.M.A. Hamdy and E.A. Parker
- Source: Electronics Letters, Volume 18, Issue 14, p. 624 –626
- DOI: 10.1049/el:19820427
- Type: Article
- + Show details - Hide details
-
p.
624
–626
(3)
A modal analysis gave the current distribution on the capacitive and inductive components of the square for plane wave incidence up to 50° in the principal planes. 12 current functions were required to reproduce the observed transmission through the surface. Their complex amplitudes are tabulated to show the significance of symmetrical and asymmetrical functions at two reflection resonant frequencies.
PIN-GaAs FET optical receiver with a wide dynamic range
- Author(s): B. Owen
- Source: Electronics Letters, Volume 18, Issue 14, p. 626 –627
- DOI: 10.1049/el:19820428
- Type: Article
- + Show details - Hide details
-
p.
626
–627
(2)
A simple method for increasing the dynamic range of a PIN-GaAs FET receiver is described. It requires no additional component connection at the input node of the receiver, and no sensitivity penalty is incurred. The 12.6 Mbit/s receiver described has a sensitivity of −52.6 dBm and a dynamic range >44.8 dB optical (89.6 dB electrical).
Improved analytical solution of settling behaviour of op-amps
- Author(s): E. Weder and W. Guggenbühl
- Source: Electronics Letters, Volume 18, Issue 14, p. 627 –629
- DOI: 10.1049/el:19820429
- Type: Article
- + Show details - Hide details
-
p.
627
–629
(3)
Precise formulas for the step response and the settling time of op-amps are given. The formulas cover the slew as well as the quasilinear region of the op-amps. The amplifiers are modelled to have a nonlinear input stage and a single pole. The input transistors of the op-amp may be bipolar or MOS working in weak inversion.
Capillary bonded components for injection laser transmitter modules
- Author(s): L.D. Comerford and M.J. Brady
- Source: Electronics Letters, Volume 18, Issue 14, p. 629 –630
- DOI: 10.1049/el:19820430
- Type: Article
- + Show details - Hide details
-
p.
629
–630
(2)
The packaging of semiconductor lasers with fibre-optic and electronic components is described, based on the use of an Si chip as a common substrate. The components are attached by flowing solder in grooves underneath the components by capillary action. The modules are small in dimension, and fabricated using automatable techniques for low cost.
Field installation of a 31.5 km monomode optical fibre system operated at 140 Mbit/s and 650 Mbit/s
- Author(s): J.R. Stern ; D.B. Payne ; D.J. McCartney ; P. Healey ; P. Lindsey ; D.M. Russ ; J.H. Stewart
- Source: Electronics Letters, Volume 18, Issue 14, p. 631 –632
- DOI: 10.1049/el:19820431
- Type: Article
- + Show details - Hide details
-
p.
631
–632
(2)
We report the field installation of a 31.5 km monomode fibre cable link during February-March 1982. The link provided 21.3 dB loss at λ = 1.3 μm and 16.1 dB loss at λ = 1.55 μm. Also reported are systems trials over the completed link at 140 Mbit/s and 650 Mbit/s.
Simple and accurate size calculation of MOS transistor
- Author(s): P. Bernardson
- Source: Electronics Letters, Volume 18, Issue 14, p. 632 –634
- DOI: 10.1049/el:19820432
- Type: Article
- + Show details - Hide details
-
p.
632
–634
(3)
The letter describes an analytical solution to the problem of finding a correct size of a MOS transistor required to charge a load capacitance to a wanted voltage level within a given time. The resultant formula is extremely simple, yet very accurate. It could be utilised by an LSI designer, as well as in automatic design algorithms. The expression for the channel width over channel length ratio was derived from the second-order drain current equations for both regions, saturated as well as linear (not from simplified, first-order approximations).
Output noise spectrum from demodulator in an optical PFM system
- Author(s): R.P. Webb
- Source: Electronics Letters, Volume 18, Issue 14, p. 634 –636
- DOI: 10.1049/el:19820433
- Type: Article
- + Show details - Hide details
-
p.
634
–636
(3)
An expression relating the input and output noise spectra of a PFM demodulator used in an optical transmission system has been derived and confirmed experimentally.
Most viewed content for this Journal
Article
content/journals/el
Journal
5
Most cited content for this Journal
-
Extreme multistability in a memristive circuit
- Author(s): Bo-Cheng Bao ; Quan Xu ; Han Bao ; Mo Chen
- Type: Article
-
Absorptive frequency selective surface using parallel LC resonance
- Author(s): Qiang Chen ; Liguo Liu ; Liang Chen ; Jiajun Bai ; Yunqi Fu
- Type: Article
-
Partial spectral search-based DOA estimation method for co-prime linear arrays
- Author(s): Fenggang Sun ; Peng Lan ; Bin Gao
- Type: Article
-
Experimental verification of on-chip CMOS fractional-order capacitor emulators
- Author(s): G. Tsirimokou ; C. Psychalinos ; A.S. Elwakil ; K.N. Salama
- Type: Article
-
54 Gbit/s OOK transmission using single-mode VCSEL up to 2.2 km MMF
- Author(s): G. Stepniak ; A. Lewandowski ; J.R. Kropp ; N.N. Ledentsov ; V.A. Shchukin ; N. Ledentsov Jr. ; G. Schaefer ; M. Agustin ; J.P. Turkiewicz
- Type: Article
