Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 17, Issue 8, 16 April 1981
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Volume 17, Issue 8
16 April 1981
Alternative mechanism for substrate minority carrier injection in MOS devices operating in low level avalanche
- Author(s): P.A. Childs ; W. Eccleston ; R.A. Stuart
- Source: Electronics Letters, Volume 17, Issue 8, p. 281 –282
- DOI: 10.1049/el:19810197
- Type: Article
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–282
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The mechanism proposed by Matsunaga et al. to explain the injection of minority carriers into the substrate of a saturated n-channel MOST cannot account for the size of the observed current. An alternative mechanism is suggested based on optical generation of minorities by radiation emitted by hot carriers in the drain depletion region. Evidence for this mechanism is presented.
LPE growth of 1.3 μm InGaAsP CW lasers on (110) InP substrates
- Author(s): F.Z. Hawrylo
- Source: Electronics Letters, Volume 17, Issue 8, p. 282 –283
- DOI: 10.1049/el:19810198
- Type: Article
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–283
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Room temperature CW operation and threshold current densities below 1000 A/cm2 have been achieved near 1.3 μm wavelength with InP/InGaAsP/InP DH lasers grown by liquid phase epitaxy on (110)-oriented InP substrates.
Equivalent network analysis of dielectric thin-film waveguide with trapezoidal cross-section
- Author(s): M. Koshiba and M. Suzuki
- Source: Electronics Letters, Volume 17, Issue 8, p. 283 –285
- DOI: 10.1049/el:19810199
- Type: Article
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–285
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Equivalent network approach has been applied to the guided wave problems in the dielectric thin-film waveguide with trapezoidal cross-section. The results by this simple approach for the trapezoidal rib waveguide agree well with the experimental results and the results of the finite element method.
Transmission cathodoluminescence as a screening technique for rake lines in (Al,Ga)As DH laser material
- Author(s): C.A. Gaw and C.L. Reynolds
- Source: Electronics Letters, Volume 17, Issue 8, p. 285 –286
- DOI: 10.1049/el:19810200
- Type: Article
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–286
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The use of transmission cathodoluminescence (TCL) as a nondestructive screening technique for rake lines in (Al, Ga)As double heterostructure laser material is reported here for the first time. TCL evaluation is shown to correlate well with the fraction of good devices for both broad area and stripe geometry laser configurations.
Analysis of noise, sensitivity and dynamic range in digital filters using multiplier extraction approach
- Author(s): P.M. Hughes and B.M.G. Cheetham
- Source: Electronics Letters, Volume 17, Issue 8, p. 286 –288
- DOI: 10.1049/el:19810201
- Type: Article
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–288
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The evaluation of sensitivity, roundoff noise and dynamic range of digital filters involves the calculation of a number of substructure transfer functions. A method of calculating these substructure transfer functions based upon the multiplier extraction approach is proposed. This new method requires only the evaluation of a series of determinants and thus avoids the need for matrix inversion.
Structure dependent axial mode stability in GaAlAs/GaAs injection lasers
- Author(s): K. Seki ; H. Yanai ; T. Kamiya
- Source: Electronics Letters, Volume 17, Issue 8, p. 288 –290
- DOI: 10.1049/el:19810202
- Type: Article
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–290
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The influence of structure on the saturation behaviour of mode gain and the axial mode stability is investigated for different types of AlGaAs injection lasers. Both experimental and theoretical results confirm that carrier confinement along the lateral direction is effective for axial mode stabilisation.
Ohmic contacts on n-GaAs produced by spark alloying
- Author(s): R. D'angelo and P.A. Verlangieri
- Source: Electronics Letters, Volume 17, Issue 8, p. 290 –291
- DOI: 10.1049/el:19810203
- Type: Article
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–291
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A new method of forming ohmic contacts on n-GaAs using electroplated Sn/Au and alloying with a high frequency spark generator is described. This process gives an average contact resistance of 3.9×10−6±0.2×10−6 Ωcm2, which is comparable to results obtained by laser irradiation and indirect electric heating. The sparking technique produces uniform alloying of the substrate surface, while avoiding high temperatures throughout the substrate.
High speed GaAs digital integrated circuit with clock frequency of 4.1 GHz
- Author(s): R. Yamamoto and A. Higashisaka
- Source: Electronics Letters, Volume 17, Issue 8, p. 291 –292
- DOI: 10.1049/el:19810204
- Type: Article
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–292
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A maximum clock frequency of 4.1 GHz was obtained for a GaAs digital integrated circuit using deep recess normally-on GaAs MESFETs with 1.2 μm long gate and interdigitated Schottky diodes. The Ti/Pt/Au gate electrode was made by a lift-off technique with conventional photolithography. The minimum propagation delay of a NAND/AND gate was estimated to be 100 ps/gate for a fan-out of 2 from the self-oscillation frequency of the master-slave flip-flops.
Planar InP avalanche photodiode with Zn-diffused guard ring
- Author(s): H. Ando ; N. Susa ; H. Kanbe
- Source: Electronics Letters, Volume 17, Issue 8, p. 292 –294
- DOI: 10.1049/el:19810205
- Type: Article
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–294
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A guard ring structure with a p+-n−-n junction formed by Zn diffusion at 450°C gave a high gain planar InP avalanche photodiode. A maximum multiplication factor of more than 50 was obtained uniformly within the photosensitive area without edge breakdown.
Phase invariant delay approximations
- Author(s): G. Wilson and M. Papamichael
- Source: Electronics Letters, Volume 17, Issue 8, p. 294 –295
- DOI: 10.1049/el:19810206
- Type: Article
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–295
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A simple procedure, applicable to any high order transfer function (n≥3), is described, which generates a family of transfer functions possessing identical phase/frequency responses but distinct gain/frequency responses. By application to a 10th-order all-pole Bessel function, it is shown that selected members of this particular family have significantly wider gain-bandwidths and correspondingly improved time domain behaviour.
Fluoride glasses for infra-red optical fibres
- Author(s): H. Poignant ; J. le Mellot ; J.F. Bayon
- Source: Electronics Letters, Volume 17, Issue 8, p. 295 –296
- DOI: 10.1049/el:19810207
- Type: Article
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–296
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Fluoride glasses in the ZrF4-BaF2-RF3 system (R=Gd, Yb) have been investigated as potential low loss materials for achievement of fibres transmitting wavelengths at about 3–5 μm. Optical measurements confirm the interest in such components and PbF2 doping allows substantial refractive index increases, making for feasible doped core glass preforms.
Ku-band MIC bipolar VCO
- Author(s): R.G. Winch and J.L. Matson
- Source: Electronics Letters, Volume 17, Issue 8, p. 296 –298
- DOI: 10.1049/el:19810208
- Type: Article
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–298
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A new tandem pair bipolar osciplier, using GaAs hyperabrupt tuning diodes, interfaced with a 3-stage quasi-feedback amplifier/buffer/limiter gives 8.0±0.5 dBm power output over 15.1–18.2 GHz in 6.5 V tuning with a ±1.5 MHz pulling immunity (2:1 load) and 100 MHz FM rate.
Performance of integrated dynamic MOS amplifiers
- Author(s): B.J. Hosticka ; B. Hoefflinger ; D. Herbst
- Source: Electronics Letters, Volume 17, Issue 8, p. 298 –300
- DOI: 10.1049/el:19810209
- Type: Article
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The letter presents measured data of two different types of dynamic amplifier which have been integrated in a standard CMOS metal gate technology. For a supply voltage of ±5 V, gains of 70 dB were obtained with a power dissipation of 58 μW and 500 μW at clock frequencies of 10 kHz and 100 kHz, respectively. The dynamic range exceeds 100 dB.
Equivalent circuit for radial-line/coaxial-line junction
- Author(s): A.G. Williamson
- Source: Electronics Letters, Volume 17, Issue 8, p. 300 –301
- DOI: 10.1049/el:19810210
- Type: Article
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–301
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A simple equivalent circuit is presented for a commonly encountered radial-line/coaxial-line junction. The equivalent circuit is applicable to the usual situation where the dominant modes in the respective lines are the only propagating modes.
GaAlAs/GaAs heterojunction microwave bipolar transistor
- Author(s): H. Beneking and L.M. Su
- Source: Electronics Letters, Volume 17, Issue 8, p. 301 –302
- DOI: 10.1049/el:19810211
- Type: Article
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–302
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A GaAlAs/GaAs heterojunction bipolar transistor has been developed and tested. A double base structure was adopted to facilitate critical selective etching problems. An emitter-collector breakdown voltage VCEO as high as 80 V was achieved. Maximum frequency of oscillationfmax of 850 MHz and a cutoff frequency fT of 1.6 GHz were realised. The current-gain/temperature curve shows that the transistor can be operated at temperatures up to 350°C.
Histogram equalisation with S and π functions in detecting X-ray edges
- Author(s): S.K. Pal and R.A. King
- Source: Electronics Letters, Volume 17, Issue 8, p. 302 –304
- DOI: 10.1049/el:19810212
- Type: Article
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–304
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An algorithm consisting of a histogram equalisation technique followed by further enhancement using S and π membership functions is described to detect the small variation in grey levels of X-ray images. The effectiveness of the algorithm in identifying the different regional contours related to growth of normal bones is demonstrated.
Optical tee coupler for data bus system with single multimode fibres
- Author(s): T. Matsui and M. Nunoshita
- Source: Electronics Letters, Volume 17, Issue 8, p. 304 –305
- DOI: 10.1049/el:19810213
- Type: Article
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A new type of optical tee coupler was developed for a data bus system with single multimode fibres. It is constructed of a wedge-shaped mirror and three graded-index rod lenses. Its three ports, which are ready to plug in, interconnect asymmetrically with one another. For a laser diode of wavelength 0.9 μm, the coupling losses between three fibres attached into the ports were adjusted to be 3.9 to 7.9 dB. The coupler insertion losses were 1.3 to 2.5 dB.
Estimation of parameter drift rate for detection and prediction of faults
- Author(s): L. Kazovsky and A. Cohen
- Source: Electronics Letters, Volume 17, Issue 8, p. 306 –307
- DOI: 10.1049/el:19810214
- Type: Article
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System faults may be detected and predicted via estimation of trajectories of the system dynamic parameters in the parameter space. During normal operation, the parameters exhibit random motion around their nominal values. A drift of one (or more) parameters may indicate a fault. Two algorithms are developed here for the estimation of the parameter drift rate. The performance of the developed algorithms is also evaluated.
High efficiency InP transferred electron device for high peak power, high mean power pulsed sources in J-band
- Author(s): D.R. Brambley and D.C. Smith
- Source: Electronics Letters, Volume 17, Issue 8, p. 307 –308
- DOI: 10.1049/el:19810215
- Type: Article
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–308
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High efficiency indium transferred electron pulsed diodes have been shown to produce high peak powers simultaneously with moderately high mean power with DC to RF conversion efficiencies up to 22% at upper J-band frequencies. Devices have been combined in four-diode waveguide array circuits to produce powers of 40 W peak, 2 W mean simultaneously, and 64.5 W at lower duty cycle.
Optical fibre diameter variations and their effect on backscatter loss measurements
- Author(s): A.J. Conduit ; D.N. Payne ; A.H. Hartog ; M.P. Gold
- Source: Electronics Letters, Volume 17, Issue 8, p. 308 –310
- DOI: 10.1049/el:19810216
- Type: Article
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Diameter variations in optical fibres are shown to affect back-scatter loss measurements by a mechanism which primarily involves attenuation of the backward travelling light. A simple model which predicts anticorrelated loss features when measured from opposite ends of the fibre is verified experimentally.
Refractive index dispersion of lightguide glasses at high temperature
- Author(s): N. Shibata ; S. Shibata ; T. Edahiro
- Source: Electronics Letters, Volume 17, Issue 8, p. 310 –311
- DOI: 10.1049/el:19810217
- Type: Article
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–311
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The refractive index of pure and GeO2-doped silica glasses was measured at wavelengths from 0.4 μm to 2.1 μm, over a temperature range from 20°C to 540°C. Values for the thermal coefficient of the refractive index (about 1.2×10−5/°C at 1.3 μm) were almost identical for both glasses. The data showed that material dispersion for optical fibres increases with increasing temperature.
New detector for thermal imaging systems
- Author(s): C.T. Elliott
- Source: Electronics Letters, Volume 17, Issue 8, p. 312 –313
- DOI: 10.1049/el:19810218
- Type: Article
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A new type of infra-red device based on n-type cadmium mercury telluride is described which performs both the detection function and the time delay integration function in serial or serial-parallel scan thermal imaging systems. It is a simple device which considerably reduces system complexity in either the 8–14 μm or 3–5 μm wavebands.
Radiation characteristics of array of crescent slots fed through radial waveguide
- Author(s): F. Rahman ; L. Shafai ; E. Bridges
- Source: Electronics Letters, Volume 17, Issue 8, p. 314 –315
- DOI: 10.1049/el:19810219
- Type: Article
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An array of annular slots fed through a radial waveguide does not produce axial radiation when excited through a simple coaxial line. One method of producing axial radiation is to make the excitation cos φ dependent. An alternative method of producing axial radiation is presented, where instead of changing the excitation the slot shape is changed, thereby keeping the excitation simple.
CW single-pass Raman generation in optical fibres
- Author(s): Y. Sasaki ; Y. Ohmori ; M. Kawachi ; T. Edahiro
- Source: Electronics Letters, Volume 17, Issue 8, p. 315 –316
- DOI: 10.1049/el:19810220
- Type: Article
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Continuous wave single-pass Raman generation has been observed in optical fibres. Experiments showed that the first and the second Stokes have been observed with 0.6 W and 4.8 W of 1.064 μm pump power input, respectively, in a 35 km single-span VAD (vapour phase axial deposition) fibre with the loss of 1.13 dB/km at 1.064 μm. The threshold for the CW first Stokes was 1.25 W and complete conversion of the pump to the first Stokes was obtained with the pump power of 4 W.
Erratum: Current-voltage conveyor
- Author(s): I.M. Filanovsky and K.A. Stromsmoe
- Source: Electronics Letters, Volume 17, Issue 8, page: 316 –316
- DOI: 10.1049/el:19810221
- Type: Article
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Erratum: Strength of fusion splices for fibre lightguides
- Author(s): J.T. Krause ; C.R. Kurkjian ; U.C. Paek
- Source: Electronics Letters, Volume 17, Issue 8, page: 316 –316
- DOI: 10.1049/el:19810222
- Type: Article
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Erratum: Voltage amplification in switched-capacitor networks
- Author(s): I. Cederbaum
- Source: Electronics Letters, Volume 17, Issue 8, page: 316 –316
- DOI: 10.1049/el:19810223
- Type: Article
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