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Online ISSN 1350-911X Print ISSN 0013-5194

Electronics Letters

Volume 17, Issue 5, 5 March 1981

Volumes & issues:

Volume 17, Issue 5

5 March 1981

Polarisation preservation in multimode fibres
Fast response InP/InGaAsP heterojunction phototransistors
Low noise single-ended mixer for 230 GHz
  • Author(s): J.W. Archer  and  R.J. Mattauch
  • Source: Electronics Letters, Volume 17, Issue 5, p. 180 –181
  • DOI:  10.1049/el:19810127
  • Type: Article
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  • p. 180 –181 (2)
    Performance of a single-ended fundamental frequency diode mixer, designed for cooled operation in the frequency range 190–260 GHz, is reported. At 230 GHz the best single sideband (SSB) mixer temperature obtained was 300 K, when the mixer was cooled to 20 K, with a corresponding SSB conversion loss of 5.9 dB. The significant improvement compared to previously reported results is attributed to the novel mixer mount design and to the optimum empirical choice of diode electrical parameters.
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Generalised analysis of microwave networks including lumped elements
Even mode analysis of symmetric coupled microstrip
Effects of γ-irradiation on MID-IR transmitting glass
GaAs microwave power FET with polyimide overlay interconnection
  • Author(s): B. Turner ; W.P. Barr ; D.P. Cooper ; D.J. Taylor
  • Source: Electronics Letters, Volume 17, Issue 5, p. 185 –187
  • DOI:  10.1049/el:19810131
  • Type: Article
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  • p. 185 –187 (3)
    An overlay interconnection technology has been developed for GaAs microwave power FETs, using polyimide as an insulator. An output power of 1017 mW at 4.3 dB gain was achieved at 8 GHz with 27° power added efficiency from a device with a gate width of 1.2 mm. Comparison with devices without overlay interconnection and having a narrower gate width revealed no evidence for degradation in device performance attributable to the interconnection technology.
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Stabilising single mode fibre couplers by using GEL glass
Chromium contamination in VPE InP from photoconductivity spectra
  • Author(s): S. Fung ; R.J. Nicholas ; A.M. Davison ; R.A. Stradling
  • Source: Electronics Letters, Volume 17, Issue 5, p. 188 –190
  • DOI:  10.1049/el:19810133
  • Type: Article
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  • p. 188 –190 (3)
    A photoconductivity study has been made of nominally undoped VPE n-InP materials grown on semi-insulating InP:Fe substrates. The photoresponse spectra obtained indicate features characteristic of Cr deep acceptors. By comparing the magnitudes of the photoresponse with that of a back-doped InP:Cr reference sample, the concentration has been estimated at between 2 and 8×1014 cm−3.
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Melting layer attenuation at 28.6 GHz from simultaneous comstar beacon and polarisation diversity radar data
  • Author(s): A. Hendry ; Y.M.M. Antar ; J.J. Schlesak ; R.L. Olsen
  • Source: Electronics Letters, Volume 17, Issue 5, p. 190 –191
  • DOI:  10.1049/el:19810134
  • Type: Article
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  • p. 190 –191 (2)
    Attenuation data at 28.6 GHz obtained from measurements of the Comstar beacon show that, for moderate rain, slant path attenuation may significantly exceed that calculated from simultaneous radar reflectivity measurements. Polarisation diversity radar data were used for positive identification of the rain and the melting layer, and for estimating the rain attenuation along the path. These results indicate that the melting layer attenuation is significant.
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Single mode fibres with asymmetrical refractive index pits on both sides of core
  • Author(s): T. Hosaka ; K. Okamoto ; Y. Sasaki ; T. Edahiro
  • Source: Electronics Letters, Volume 17, Issue 5, p. 191 –193
  • DOI:  10.1049/el:19810135
  • Type: Article
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  • p. 191 –193 (3)
    Polarisation characteristics of single mode fibres with asymmetrical refractive index pits on both sides of the core have been investigated. The modal birefringence of the single mode fibre measured at λ=1.15 μm was 5×10−5. It was confirmed that the state of polarisation was stable and was scarcely affected by the ambient conditions such as concentrated force, twists of the fibre, and temperature variations.
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Backscattering measurement of bending-induced birefringence in single mode fibres
  • Author(s): Byoung Yoon Kim  and  Sang Sam Choi
  • Source: Electronics Letters, Volume 17, Issue 5, p. 193 –194
  • DOI:  10.1049/el:19810136
  • Type: Article
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  • p. 193 –194 (2)
    The local distribution of birefringence in a very low birefringence single mode fibre less than 1 km long is measured by analysing the backscattered light. The experimental results of bending-induced birefringence measurements for various bending radii are in good agreement with those calculated. For 130 μm diameter fibre wound around cylinders of radii 15 cm and 8 cm, the bending-induced birefringence βb(15 cm)=9°/m and βb(8 cm)=34°/m, respectively, at λ=904 nm.
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Voltage amplification in switched-capacitor networks
  • Author(s): I. Cederbaum
  • Source: Electronics Letters, Volume 17, Issue 5, p. 194 –196
  • DOI:  10.1049/el:19810137
  • Type: Article
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  • p. 194 –196 (3)
    The letter deals with the voltage amplification property of networks containing only capacitors and switches. It is shown that with any given n capacitors a circuit comprising a finite number of switches may be realised for which a voltage amplification close to 2n is achievable. If there is freedom in choosing the capacitors, then a switching circuit may be designed for which voltage amplification close to 22n−2+2n−1 is achievable. It is conjectured that this number presents the upper bound of voltage amplification achievable by means of an SC circuit with n capacitors.
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Microprocessor-based real time system for eye motion analysis
Realisable 100% raised cosine filters
Microstrip circular-segment antenna
Backscattering signatures from graded-index fibres with diameter variations
10 Gbit/s AND gate using dual-gate GaAs MESFET
Analytical approach to prediction of dispersion properties of step-index single mode optical fibres
Solution of Lyapunov equation for the state matrix
  • Author(s): K.V. Fernando  and  H. Nicholson
  • Source: Electronics Letters, Volume 17, Issue 5, p. 204 –205
  • DOI:  10.1049/el:19810144
  • Type: Article
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  • p. 204 –205 (2)
    A spectral method for the solution of the Lyapunov equation for the state matrix A is described if the symmetric matrices P and Q are known. This can be used to ‘identify’ the matrix A if P is obtained as a Grammian matrix. The solution has a symmetric component and an arbitrary skew-symmetric component in a transformed domain. Bounds on the real parts of the eigenvalues of A are also obtained.
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Integrated CMOS SC filter with 170 kHz cutoff frequency
  • Author(s): D. Herbst ; B.J. Hosticka ; B. Höfflinger ; U. Kleine ; W. Nientiedt ; R. Schweer
  • Source: Electronics Letters, Volume 17, Issue 5, p. 205 –207
  • DOI:  10.1049/el:19810145
  • Type: Article
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  • p. 205 –207 (3)
    Based on the theory of switched capacitor (SC) filters using voltage invertor switches (VIS) a third order lowpass filter has been designed and integrated in a standard CMOS metal gate technology. The filter uses a bottom plate stray-insensitive VIS and requires only unity gain buffers. Performance parameters of an integrated version are: cutoff frequency 170 kHz, dynamic range 70 dB, and power dissipation 12 mW.
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Anomalous nonlinearity in quartz crystal filters
New switched capacitor ladder filter with reduced number of amplifiers
Lens design for surface wave applications
Erratum: Novel active-compensated weighted summer
Erratum: Numerically stable algorithm for standard controllability form determination

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