Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 17, Issue 24, 26 November 1981
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Volume 17, Issue 24
26 November 1981
Optically frequency modulated GaAs MESFET oscillator
- Author(s): B. Loriou ; J. Guena ; J.F. Sautereau
- Source: Electronics Letters, Volume 17, Issue 24, p. 901 –902
- DOI: 10.1049/el:19810628
- Type: Article
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A GaAs MESFET X-band oscillator has been frequency modulated by an amplitude modulated optical signal injected on the active device. A modulation index of 0.5 corresponding to MSK modulation has been achieved at 2 Mbit/s without parasitic amplitude modulation. It is shown that the FM modulation index variation against frequency is directly related to the drain current response of the FET considered as a photodetector. This responsivity has been measured to decrease above 5 MHz, which limits the oscillator FM capability.
Waveguide cavity FET oscillator
- Author(s): A. Materka and S. Mizushina
- Source: Electronics Letters, Volume 17, Issue 24, p. 902 –904
- DOI: 10.1049/el:19810629
- Type: Article
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A new single-tuned oscillator, applicable to power combining circuits, is described in which a probe antenna is used to provide coupling between an active device and the cavity. It is shown that output power, oscillation frequency and injection locking range of the oscillator can be controlled independently in the circuit design. The experiments with low-power FET oscillators demonstrate output power of 44 mW at 9.2 GHz and DC-RF conversion efficiency of 33.2% from a single-device oscillator and about 100% of power combining efficiency in the case of two- and three-device circuits.
CCD linear image sensor with buried overflow drain structure
- Author(s): H. Goto ; H. Sekine ; T. Yamada ; N. Suzuki
- Source: Electronics Letters, Volume 17, Issue 24, p. 904 –905
- DOI: 10.1049/el:19810630
- Type: Article
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A CCD linear image sensor with buried overflow drain structure has been developed. Since the overflow drain, i.e. a reverse biased n-region buried under photosites arrayed in p-layer, makes an effective sink of excess electrons, imaging characteristics such as uniformity of photosensitivity, spectral response, resolution, and antiblooming, are highly improved.
Mutual influence among imperfect joints in multimode-fibre link
- Author(s): V. Rizzoli and C.G. Someda
- Source: Electronics Letters, Volume 17, Issue 24, p. 906 –907
- DOI: 10.1049/el:19810631
- Type: Article
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Power loss against offsets in multimode fibres with several joints is analysed via a modal (Hermite-Gauss) approach. A Monte Carlo analysis of a long link with mode differential attenuation shows that the average loss per joint is significantly larger than that measured at a single joint with steady-state input distribution.
New reinforcement for arc-fusion spliced fibre
- Author(s): M. Miyauchi ; M. Matsumoto ; Y. Toda ; K. Matsuno ; Y. Tokumaru
- Source: Electronics Letters, Volume 17, Issue 24, p. 907 –908
- DOI: 10.1049/el:19810632
- Type: Article
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A new type of reinforcement using thermoplastic adhesives has been developed. The reinforcement consists of an EVA tube, a steel rod, and a PE shrinkable tube. A loss increase less than 0.1 dB at −60°C and an average tensile strength of 2.3 kg have been achieved. Stable and reliable performance of the reinforcement has been confirmed by reliability tests.
Simple derivation of discrete minimal-order optimal estimator
- Author(s): J. O'Reilly and M.M. Fahmy
- Source: Electronics Letters, Volume 17, Issue 24, p. 908 –910
- DOI: 10.1049/el:19810633
- Type: Article
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A simple new derivation of the minimal-order discrete-time optimal estimator is presented. The method exploits the fact that the Kalman filter algorithm can be directly reduced in order by the number of noise-free system measurements.
Phase constraints on FIR digital filters
- Author(s): T.F. Liau ; M.A. Razzak ; L.G. Cuthbert
- Source: Electronics Letters, Volume 17, Issue 24, p. 910 –911
- DOI: 10.1049/el:19810634
- Type: Article
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The letter shows how FIR digital filters can be designed to meet a specific nonlinear phase response in the transition region, although the gain of the filter is not specified in this region.
Equivalent-time signal acquisition and processing
- Author(s): J.J. O'Reilly
- Source: Electronics Letters, Volume 17, Issue 24, p. 911 –912
- DOI: 10.1049/el:19810635
- Type: Article
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Equivalent-time signal acquisition in the presence of stationary additive noise is considered and contrasted with ‘realtime’ transient recording. It is shown how the substantial noise decorrelation encountered with equivalent-time methods can markedly influence the form of an optimum post-processor and the signal/noise ratio attainable.
Performance of ruthroff transformer with reactive loads
- Author(s): R.T. Irish
- Source: Electronics Letters, Volume 17, Issue 24, p. 913 –914
- DOI: 10.1049/el:19810636
- Type: Article
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The Ruthroff transformer, feeding a complex load impedance, is analysed and the results indicate it to be capable of matching a resistive source. Consideration of the equations obtained show that this may only be achieved when the ratio of load resistance to source resistance is greater than 4:1.
Short- or open-circuited dipole parallel to perfect reflector plane and embedded in substrate and acting at resonance
- Author(s): G. Dubost
- Source: Electronics Letters, Volume 17, Issue 24, p. 914 –916
- DOI: 10.1049/el:19810637
- Type: Article
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The properties of an open or short-circuited flat resonant dipole parallel to a reflector plane and embedded in a substrate are given. Simple transmission-line model analysis is used. Correct agreement is obtained between theoretical and experimental results, and literal formulas for radiation resistance and bandwidth are thus justified. To a first approximation, the radiation resistance is independent of the substrate, whose effect is to reduce the length and the bandwidth of the radiating dipole.
Slot ring resonator and dispersion measurement on slot lines
- Author(s): K. Kawano and H. Tomimuro
- Source: Electronics Letters, Volume 17, Issue 24, p. 916 –917
- DOI: 10.1049/el:19810638
- Type: Article
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Slot ring resonators are used for measuring slot line wavelength. The advantage is that no end effects need be considered. The experimental results agree well with the theoretical results in the 26–33 GHz region.
Excess-noise and receiver sensitivity measurements of In0.53Ga0.47As/InP avalanche photodiodes
- Author(s): S.R. Forrest ; G.F. Williams ; O.K. Kim ; R.G. Smith
- Source: Electronics Letters, Volume 17, Issue 24, p. 917 –919
- DOI: 10.1049/el:19810639
- Type: Article
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We report the results of excess-noise and normalised receiver sensitivity measurements for In0.53Ga0.47As/InP avalanche photodiodes for use in the λ=0.95 μm to 1.65 μm spectral region. The excess-noise measurements are consistent with a hole-to-electron ionisation rate ratio in InP of ∼ 0.4. The receiver sensitivity, measured at 45 Mbit/s and 10−9 bit-error-rate, was −53.2 dBm at a gain of 20 assuming unity quantum efficiency for the detector. This sensitivity is the highest reported at λ=1.3 μm and represents an improvement over a PIN detector using the same amplifier.
Two-stage stability test for two-dimensional recursive digital filters
- Author(s): P.C. Craig and L.C. Westphal
- Source: Electronics Letters, Volume 17, Issue 24, p. 919 –920
- DOI: 10.1049/el:19810640
- Type: Article
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This letter presents a two-stage stability test for two-dimensional recursive digital filters and gives details for 1st- and 2nd-order two-dimensional sections. The method is based on the properties of two-variable strictly Hurwitz polynomials.
Active RC single-resistance-controlled lossless floating inductance simulation using single grounded capacitor
- Author(s): V. Singh
- Source: Electronics Letters, Volume 17, Issue 24, p. 920 –921
- DOI: 10.1049/el:19810641
- Type: Article
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A novel CCII-based circuit using a single grounded capacitor for single-resistance-controlled lossless floating inductance simulation is presented.
Effect of substrate orientation on electrical properties of LPE-grown InP
- Author(s): K. Akita ; A. Yamaguchi ; K. Nakajima ; T. Takanohashi
- Source: Electronics Letters, Volume 17, Issue 24, p. 921 –922
- DOI: 10.1049/el:19810642
- Type: Article
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The carrier concentrations of LPE-grown layers on (111)B substrates are about twice that of layers grown simultaneously on (100) substrates from the same solution. The analysis shows that the distribution coefficient for donor impurity is about 2.5 times larger in the case of (111)B face than that of (100) face.
Nonperiodic sampling and identifiability
- Author(s): M. de la Sen and S. Dormido
- Source: Electronics Letters, Volume 17, Issue 24, p. 922 –924
- DOI: 10.1049/el:19810643
- Type: Article
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It is shown that the state transition matrix may be identified using arbitrary sampling under not very restrictive conditions. A good transmission of the relative measuring errors towards the identification results may be achieved by an adequate choice of the sampling instants using very well known numerical analysis concepts.
Low-cost multiprocessor system
- Author(s): A. Gago and J. Biscarri
- Source: Electronics Letters, Volume 17, Issue 24, p. 924 –925
- DOI: 10.1049/el:19810644
- Type: Article
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The letter presents a multiprocessor system particularly advantageous in tightly coupled structures. The procedure is based on the fact that the microprocessor CPUs actually interact with the memory and I/O devices during a small fraction of the clock cycle. Conflicts in the memory bus access are avoided by a simple clocking and enabling method.
MOS switched capacitor integrator eliminating operational amplifiers
- Author(s): H. Jamal and F.E. Holmes
- Source: Electronics Letters, Volume 17, Issue 24, p. 925 –926
- DOI: 10.1049/el:19810645
- Type: Article
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The letter describes a novel switched capacitor differential integrator circuit, useful for filtering and analogue/digital conversion applications. It uses a bucket-brigade type charge transfer to eliminate operational amplifiers. This results in reduced chip area, static power and noise. Enhancement-type NMOS transistors and MOS capacitors are used and only a single power supply is required.
Ultrabroadband GaAs monolithic amplifier
- Author(s): K. Honjo ; T. Sugiura ; H. Itoh
- Source: Electronics Letters, Volume 17, Issue 24, p. 927 –928
- DOI: 10.1049/el:19810646
- Type: Article
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A 500 kHz–2.8 GHz, 13.5 dB GaAs monolithic amplifier has been developed for gigabit baseband pulse amplification. Input VSWR was reduced using inter-gate-drain negative feedback. The interstage circuit is a DC coupled circuit consisting of a high impedance transmission line.
4 Gbit/s pseudo-noise generator using GaAs MESFETs
- Author(s): M. Henry and J.L. Baron
- Source: Electronics Letters, Volume 17, Issue 24, p. 928 –929
- DOI: 10.1049/el:19810647
- Type: Article
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A multiplexing gate using GaAs MESFETs is described and operation up to 4 Gbit/s is demonstrated. A 2 Gbit/s pseudo-noise generator which can deliver NRZ or RZ signals has been implemented with this circuit; the corresponding output sequences are shown.
Parasitic compensated switched capacitor circuits
- Author(s): P.E. Fleischer ; A. Ganesan ; K.R. Laker
- Source: Electronics Letters, Volume 17, Issue 24, p. 929 –931
- DOI: 10.1049/el:19810648
- Type: Article
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A parasitic-insensitive switched capacitor circuit is presented which can functionally replace the ‘toggle-switched’ capacitor. Its properties are established via an inverting integrator application. A related parasitic-insensitive realisation is also shown for a noninverting integrator, which can provide a 3/2 clock period transmission delay.
External cavity controlled single longitudinal mode laser transmitter module
- Author(s): K.R. Preston ; K.C. Woollard ; K.H. Cameron
- Source: Electronics Letters, Volume 17, Issue 24, p. 931 –933
- DOI: 10.1049/el:19810649
- Type: Article
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A GaInAsP/InP laser transmitter module incorporating an external cavity is described. It is shown that the cavity produces stable tunable single longitudinal mode operation of the laser even under high speed modulation conditions.
Spontaneous emission factor of narrow-stripe gain-guided diode lasers
- Author(s): W. Streifer ; D.R. Scifres ; R.D. Burnham
- Source: Electronics Letters, Volume 17, Issue 24, p. 933 –934
- DOI: 10.1049/el:19810650
- Type: Article
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The spontaneous emission factor of narrow-stripe gain-guided diode lasers, which is of importance in determining time-response and longitudinal-mode structure, is shown to be one order of magnitude greater than previously supposed.
Cylindrical concave diffraction grating utilising thin silicon chip
- Author(s): Y. Fujii and J. Minowa
- Source: Electronics Letters, Volume 17, Issue 24, p. 934 –936
- DOI: 10.1049/el:19810651
- Type: Article
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A unique manufacturing method for concave diffraction gratings is proposed. Also, a cylindrical concave diffraction grating was manufactured with a multimode slab waveguide. A silicon plane diffraction grating was bent cylindrically in this method. The efficiency of the concave diffraction grating was 82% at a 1.3 μm wavelength. The efficiency was about the same as that of the plane diffraction grating.
Erratum: Groove GaInAsP laser on semi-insulating InP
- Author(s): K.L. Yu ; U. Koren ; T.R. Chen ; T.R. Chen ; A. Yariv
- Source: Electronics Letters, Volume 17, Issue 24, page: 936 –936
- DOI: 10.1049/el:19810652
- Type: Article
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Erratum: Speed-power property of GaAs Schottky-barrier coupled Schottky-barrier gate FET logic
- Author(s): K. Tomizawa ; N. Hashizume ; K. Matsumoto
- Source: Electronics Letters, Volume 17, Issue 24, page: 936 –936
- DOI: 10.1049/el:19810653
- Type: Article
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Erratum: New inductance and capacitor floatation schemes using current conveyors
- Author(s): K. Pal
- Source: Electronics Letters, Volume 17, Issue 24, page: 936 –936
- DOI: 10.1049/el:19810654
- Type: Article
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