Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 17, Issue 16, 6 August 1981
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Volume 17, Issue 16
6 August 1981
Low-power gigabit logic by GaAs SSFL
- Author(s): N. Hashizume ; H. Yamada ; T. Kojima ; K. Matsumoto ; K. Tomizawa
- Source: Electronics Letters, Volume 17, Issue 16, p. 553 –554
- DOI: 10.1049/el:19810387
- Type: Article
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–554
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Experimental results on improved GaAs Schottky-barrier coupled Schottky-barrier gate FET logic (SSFL) are reported. A 13-stage ring oscillator, gate dimensions 1.2×20 μm2, showed tpd=55 ps/gate at P=3.5 mW/gate. Also, a divide-by-two circuit was confirmed, starting normal operation from a single initialisation pulse.
New correlation radiometer for microwave thermography
- Author(s): A. Mamouni ; J.C. van de Velde ; Y. Leroy
- Source: Electronics Letters, Volume 17, Issue 16, p. 554 –555
- DOI: 10.1049/el:19810388
- Type: Article
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We describe a new radiometric method capable of reaching a better control of the volume of the tissue under investigation in microwave thermography (this technique is mainly used in biomedical applications). Our process is based on the fact that two (or several) probes with a volume under investigation in common are collecting thermal noise signals which are correlated.
High-performance millimetrewave GaAs Schottky-barrier flip-chip diode
- Author(s): C.S. Setzer and R.J. Mattauch
- Source: Electronics Letters, Volume 17, Issue 16, p. 555 –557
- DOI: 10.1049/el:19810389
- Type: Article
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Theoretical and experimental results reveal a novel flip-chip structure which allows attainment of both parasitic and internal device element values comparable with, or even superior to, the ultrasensitive whisker-contact Schottky-diode structure. Preliminary results with neither device nor choke structure matched to mixer block show LDSB<10 dB, Tmix approximately 2000 K (91 GHz, 300 K).
Temperature dependence of the Gunn threshold in GaAs
- Author(s): A.R. Adams and H.L. Tatham
- Source: Electronics Letters, Volume 17, Issue 16, p. 557 –558
- DOI: 10.1049/el:19810390
- Type: Article
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Measurement of the temperature dependence of the threshold for transferred electron instabilities in GaAs gives (1/IP(300))×(dIP/dT=−2.4±0.2×10−3 K−1, independent of carrier concentration The threshold field decreases with decreasing T and depends on carrier concentration. Reasonable agreement is obtained with Monte Carlo calculations based on γ-L-X ordering.
Blood compatibility of components and materials in silicon integrated circuits
- Author(s): Y. Kanda ; R. Aoshima ; A. Takada
- Source: Electronics Letters, Volume 17, Issue 16, p. 558 –559
- DOI: 10.1049/el:19810391
- Type: Article
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–559
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The blood coagulation test of fundamental materials, packages, and polymers related to ICs was made by the Sahli-Fonio method Samples of 18 kinds were tested. Among all samples, parylene C, which is used as an electronics-coating polymer film, is the best Silicon is poor next to glass
1.3 μm-wavelength mode controlled GaInAsP/InP etched laser
- Author(s): K. Moriki ; K. Iga ; M. Uchida ; K. Wakao ; T. Kunikane
- Source: Electronics Letters, Volume 17, Issue 16, p. 559 –560
- DOI: 10.1049/el:19810392
- Type: Article
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A mode controlled GaInAsP/InP (λ=1.3 μm) etched laser with a lens-like narrow strip waveguide along the <01> direction has been fabricated. The minimum threshold current was 160 mA for 170 μm cavity length, and a single longitudinal mode operation has been obtained up to 1.3 times the threshold.
Single-mode-fibre design for 4 μm band operation
- Author(s): L. Jeunhomme
- Source: Electronics Letters, Volume 17, Issue 16, p. 560 –561
- DOI: 10.1049/el:19810393
- Type: Article
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The splicing and cabling added loss are evaluated for 4 μm-wavelength single-mode fibres. It is shown that splice offset and microbending losses are critical and that high index differences are required. Added losses are small as 0.01 dB/km can be obtained with careful fibre design and handling.
Compound representation of high resolution sea clutter
- Author(s): K.D. Ward
- Source: Electronics Letters, Volume 17, Issue 16, p. 561 –563
- DOI: 10.1049/el:19810394
- Type: Article
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A proposed form of compound distribution to describe the non-Rayleigh distribution and correlation properties of high resolution radar sea clutter is shown to be a good fit to experimental data. From this model the K distribution is derived, and a possible physical mechanism is discussed.
Minimum trajectory sensitivity of a linear system
- Author(s): V. Guruprasada Rau
- Source: Electronics Letters, Volume 17, Issue 16, p. 563 –564
- DOI: 10.1049/el:19810395
- Type: Article
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The letter provides a proof for the statement that, for a linear multivariable system, minimum eigenvalue sensitivity guarantees minimum trajectory sensitivity.
Wavelength dependence of polarisation mode dispersion in elliptical-core single-mode fibres
- Author(s): N. Shibata ; M. Tateda ; S. Seikai ; N. Uchida
- Source: Electronics Letters, Volume 17, Issue 16, p. 564 –565
- DOI: 10.1049/el:19810396
- Type: Article
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Polarisation mode dispersion in elliptical-core single-mode fibres has been measured by a spatial technique based on a visibility maximum position measurement in an interferometer. Using the technique, wavelength dependence of the modal dispersion has been measured by varying optical source wavelengths between 821 and 904 nm. As a result, contribution of geometrical and strain birefringences on the modal dispersion has been evaluated, and normalised frequency dependence of the modal dispersion has been clarified.
Electron scattering profiles in SOS films measured by temperature-dependent Hall effect
- Author(s): Jong-Hyun Lee
- Source: Electronics Letters, Volume 17, Issue 16, p. 566 –567
- DOI: 10.1049/el:19810397
- Type: Article
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The electron scattering mechanisms at every depth in heteroepitaxial SOS films have been investigated by measuring the temperature dependence of Hall mobility. It appears that, above the ‘critical’ temperature Tc=120 K, lattice scattering prevails only in the proximity of 1/SiO, while ionised impurity scattering becomes dominant near the substrate (2000 Å from Si/Al2O3) even at room temperature.
Reliability assurance for long-length optical fibre based on proof testing
- Author(s): Y. Mitsunaga ; Y. Katsuyama ; Y. Ishida
- Source: Electronics Letters, Volume 17, Issue 16, p. 567 –568
- DOI: 10.1049/el:19810398
- Type: Article
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–568
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An allowable stress condition for life-time assurance of long-length optical fibre has been clarified. The derived equation, by taking into account the failure probability, provides high assurance of fibre reliability based on proof testing.
Modal distribution of backscattered light in a step-index multimode fibre
- Author(s): R. Payne
- Source: Electronics Letters, Volume 17, Issue 16, p. 568 –570
- DOI: 10.1049/el:19810399
- Type: Article
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The modal distribution of backscattered light has been measured for a low mode-mixing, step-index fibre. The modal distribution of the Rayleigh backscatter is shown to depend on that of the exciting pulse. The possibility of substantial errors arising in reflectometry measurements of splice and connector losses is demonstrated where the receiver is mode-selective.
Microstrip IMPATT-diode oscillator for 100 GHz
- Author(s): G.B. Morgan
- Source: Electronics Letters, Volume 17, Issue 16, p. 570 –571
- DOI: 10.1049/el:19810400
- Type: Article
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The design and performance of a rugged duroid-microstrip IMPATT-diode oscillator is described. The oscillator's frequency was set by a simple, easily replaceable metal resonant cap, with fine tuning of about 30 MHz/mA being achieved by means of the diode current.
Cascaded multipole switches for single-mode and multimode optical fibres
- Author(s): W.C. Young and L. Curtis
- Source: Electronics Letters, Volume 17, Issue 16, p. 571 –573
- DOI: 10.1049/el:19810401
- Type: Article
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Multistage moving-fibre array switches which use preferentially etched silicon chips for the precise alignment of the optical fibres have been developed. In particular, a 1×4 single mode, and a 1×8 multimode fibre switch are described, with which average insertion losses of 0.8 and 0.2 dB were achieved, respectively.
Failure of Matthiessen's rule in the calculation of carrier mobility and alloy scattering effects in Ga0.47In0.53As
- Author(s): Y. Takeda and T.P. Pearsall
- Source: Electronics Letters, Volume 17, Issue 16, p. 573 –574
- DOI: 10.1049/el:19810402
- Type: Article
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Matthiessen's rule is shown to be an unacceptable approximation to analyse the scattering mechanisms in semiconductors, especially when deriving the alloy scattering-limited mobility from the experimental data. The anomalous temperature dependence of the ‘alloy scattering-limited mobility’ is caused by the failure of Matthiessen's rule in the presence of competing scattering modes. The electron Hall mobility calculated using the iterative technique explains accurately the experimental data using a single model for the alloy scattering mechanism and the appropriate material parameters.
Modelling of dual-gate MESFETs with second gate forward biased
- Author(s): P.C. Chao and W.H. Ku
- Source: Electronics Letters, Volume 17, Issue 16, p. 574 –576
- DOI: 10.1049/el:19810403
- Type: Article
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Drain characteristics of dual-gate MESFETs with the second gate positively biased have been analysed on the basis of Pucel.s model. A diode in series with a resistor was proposed to model the positively biased gate. The simulated characteristics agree well with the experimental curves.
Extension of time-bandwidth product in SAW spectrum analysers
- Author(s): P.A. Campbell ; P.M. Grant ; J.W. Arthur
- Source: Electronics Letters, Volume 17, Issue 16, p. 576 –578
- DOI: 10.1049/el:19810404
- Type: Article
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–578
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Surface-acoustic-wave (SAW) spectrum analysers use the chirp transform algorithm for real time analysis over wide (MHz) signal bandwidths. This letter reports a new technique for the generation of the long-duration wideband linear frequency modulated (chirp) waveforms used in these analysers. It now permits the overall time bandwidth product of these spectrum analysers to exceed that of the constituent SAW filters, and has consequent application in analysis of communication signals. An externally programmable weighting technique, for optimising time sidelobe suppression is also demonstrated.
Variation of diffused boron concentration in the neighbourhood of an oxide-masked edge
- Author(s): S.A. Abbasi ; O. Takleh ; A. Brunnschweiler ; J.G. Smith
- Source: Electronics Letters, Volume 17, Issue 16, p. 578 –579
- DOI: 10.1049/el:19810405
- Type: Article
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The concentration of boron diffused into silicon from a vapour source is found to be affected by the presence of masking oxide. Both spreading resistance and infra-red free-carrier emission techniques have been used to study the effect, and a decrease of about 15° in carrier concentration is observed close to the oxide-masked edge.
S-band TRAPATT oscillator with reduced frequency-temperature dependence
- Author(s): G. Tubridy
- Source: Electronics Letters, Volume 17, Issue 16, p. 579 –580
- DOI: 10.1049/el:19810406
- Type: Article
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The frequency of operation of a free-running trapatt oscillator is dependent on the ambient temperature. A means of compensating for this frequency variation has been studied and results are reported.
Erratum: Low-distortion high-output class B current convertor using error feedforward
- Author(s): B. Wilson
- Source: Electronics Letters, Volume 17, Issue 16, page: 580 –580
- DOI: 10.1049/el:19810407
- Type: Article
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Erratum: Inclusion of amplifier finite gain and bandwidth in analysis of switched-capacitor filters
- Author(s): J. Lau and J.I. Sewell
- Source: Electronics Letters, Volume 17, Issue 16, page: 580 –580
- DOI: 10.1049/el:19810408
- Type: Article
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