Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 16, Issue 16, 31 July 1980
Volumes & issues:
-
Volume 59 (2023)
-
Volume 58 (2022)
-
Volume 57 (2021)
-
Volume 56 (2020)
-
Volume 55 (2019)
-
Volume 54 (2018)
-
Volume 53 (2017)
-
Volume 52 (2016)
-
Volume 51 (2015)
-
Volume 50 (2014)
-
Volume 49 (2013)
-
Volume 48 (2012)
-
Volume 47 (2011)
-
Volume 46 (2010)
-
Volume 45 (2009)
-
Volume 44 (2008)
-
Volume 43 (2007)
-
Volume 42 (2006)
-
Volume 41 (2005)
-
Volume 40 (2004)
-
Volume 39 (2003)
-
Volume 38 (2002)
-
Volume 37 (2001)
-
Volume 36 (2000)
-
Volume 35 (1999)
-
Volume 34 (1998)
-
Volume 33 (1997)
-
Volume 32 (1996)
-
Volume 31 (1995)
-
Volume 30 (1994)
-
Volume 29 (1993)
-
Volume 28 (1992)
-
Volume 27 (1991)
-
Volume 26 (1990)
-
Volume 25 (1989)
-
Volume 24 (1988)
-
Volume 23 (1987)
-
Volume 22 (1986)
-
Volume 21 (1985)
-
Volume 20 (1984)
-
Volume 19 (1983)
-
Volume 18 (1982)
-
Volume 17 (1981)
-
Volume 16 (1980)
-
Volume 15 (1979)
-
Volume 14 (1978)
-
Volume 13 (1977)
-
Volume 12 (1976)
-
Volume 11 (1975)
-
Volume 10 (1974)
-
Volume 9 (1973)
-
Volume 8 (1972)
-
Volume 7 (1971)
-
Volume 6 (1970)
-
Volume 5 (1969)
-
Volume 4 (1968)
-
Volume 3 (1967)
-
Volume 2 (1966)
-
Volume 1 (1965)
Volume 16, Issue 16
31 July 1980
Easing prefiltering requirements of s.c. filters
- Author(s): K. Martin and A.S. Sedra
- Source: Electronics Letters, Volume 16, Issue 16, p. 613 –614
- DOI: 10.1049/el:19800425
- Type: Article
- + Show details - Hide details
-
p.
613
–614
(2)
A simple technique is presented which eases the requirements of the continuous-time antialiasing prefilter in a switched-capacitor filter.
Low temperature thermal annealing of arsenic implanted silicon
- Author(s): P.D. Scovell and J.M. Young
- Source: Electronics Letters, Volume 16, Issue 16, p. 614 –615
- DOI: 10.1049/el:19800426
- Type: Article
- + Show details - Hide details
-
p.
614
–615
(2)
The annealing of heavily arsenic implanted (100) silicon using low temperature furnace techniques to obtain metastable concentrations of the dopant is described and the activations obtained are compared with those found after laser and electron beam annealing.
Negative failsafe sequential circuits
- Author(s): N. Gaitanis and C. Halatsis
- Source: Electronics Letters, Volume 16, Issue 16, p. 615 –617
- DOI: 10.1049/el:19800427
- Type: Article
- + Show details - Hide details
-
p.
615
–617
(3)
The letter presents a new method of designing failsafe sequential circuits by using appropriate negative forms for the next state functions and a proper state assignment of a k-out-of-n code. The use of negative monotone functions makes the circuit oscillate between two states which are outside the normal states of the circuit when the circuit, by any reason, assumes some state outside the normal ones.
Simple method for evaluating electronic properties at silicon—sapphire interface
- Author(s): P. Gentil
- Source: Electronics Letters, Volume 16, Issue 16, p. 617 –618
- DOI: 10.1049/el:19800428
- Type: Article
- + Show details - Hide details
-
p.
617
–618
(2)
Electric characteristics of metal-sapphire-silicon transistors are presented. The insulator of the devices is obtained by thinning to 50–100 μm the sapphire substrate of s.o.s. m.o.s. transistors. Devices allow the determination of electronic mobility μn = 40 cm2 V−1 s−1, in the inversion layer of the Si-sapphire interface.
Spectra of amplitude scintillations in X-band satellite downlink
- Author(s): J. Haddon ; P. Lo ; T.J. Moulsley ; E. Vilar
- Source: Electronics Letters, Volume 16, Issue 16, p. 619 –620
- DOI: 10.1049/el:19800429
- Type: Article
- + Show details - Hide details
-
p.
619
–620
(2)
Spectral densities of amplitude scintillations on a satellite downlink at 11.8 GHz and 30° elevation are presented. Spectra are flat below about 0.3 Hz and range between 10−3 and 0.2 dB2 Hz−1. At high frequencies the spectrum falls like f−α with α found to be 2.16 ± 0.28. Spectral characteristics and their correlation with intensity of the scintillations are discussed.
Bandwidth limited picosecond optical pulse generation from actively mode-locked AlGaAs diode laser
- Author(s): H. Ito ; H. Yokoyama ; H. Inaba
- Source: Electronics Letters, Volume 16, Issue 16, p. 620 –621
- DOI: 10.1049/el:19800430
- Type: Article
- + Show details - Hide details
-
p.
620
–621
(2)
A simple configuration made of a conventional AlGaAs diode laser without antireflection coating combined with an external reflector and an optical etalon was proved to be practically feasible to generate bandwidth limited mode-locked optical pulses of 30 ps duration by synchronous modulation at the external cavity mode interval. Generated optical pulse shape was found to be Lorentzian rather than Gaussian for the first time, based on the measurements of both the s.h.g. correlation method and the ultrafast streak camera.
High voltage electron lithography
- Author(s): T.R. Neill and C.J. Bull
- Source: Electronics Letters, Volume 16, Issue 16, p. 621 –623
- DOI: 10.1049/el:19800431
- Type: Article
- + Show details - Hide details
-
p.
621
–623
(3)
Experiments with a 50 keV electron beam confirmed that backscatter exposure close to pattern edges is reduced substantially compared with the lithographic experience at 20 keV. This, together with reduced beam spreading in the resist, permits improved definition of low micrometre and submicrometre features at a uniform dose.
New reinforcement algorithm in learning automata
- Author(s): D. Maravall
- Source: Electronics Letters, Volume 16, Issue 16, p. 623 –624
- DOI: 10.1049/el:19800432
- Type: Article
- + Show details - Hide details
-
p.
623
–624
(2)
The letter presents a new stochastic process and its application to learning automata as a reinforcement scheme, and briefly reports some experimental results concerning the comparison between the new algorithm and the most efficient classical reward-inaction scheme.
Novel supervisory channel for fibre optic transmission systems
- Author(s): P. Cochrane and J.A. Kitchen
- Source: Electronics Letters, Volume 16, Issue 16, p. 624 –626
- DOI: 10.1049/el:19800433
- Type: Article
- + Show details - Hide details
-
p.
624
–626
(3)
The provision of a supervisory/service channel on digital transmission systems by direct modulation of the transmitted data bit rate is described. The technique is examined in the context of high bit rate fibre optic system applications and both theoretical as well as practical results are presented.
Schottky barrier height of Au on n-type Ga1−xAlxSb (0.0≤x≤0.65)
- Author(s): R. Chin ; R.A. Milano ; H.D. Law
- Source: Electronics Letters, Volume 16, Issue 16, p. 626 –627
- DOI: 10.1049/el:19800434
- Type: Article
- + Show details - Hide details
-
p.
626
–627
(2)
The dependence of the barrier height φBn of Au-Ga1−xAlxSb Schottky barriers on x, the mole fraction of Al in the solid, has been measured. The data show that as x increases the values of φBn also increase. However, the measured barrier heights do not agree with those predicted by the ‘common anion’ rule. This result, coupled with other available data, indicates that the Au-Ga1−xAlxSb hole Schottky barrier height (φBn) is not independent of the Ga/Al cation ratio.
Dark field acoustic microscopy
- Author(s): D.A. Sinclair and I.R. Smith
- Source: Electronics Letters, Volume 16, Issue 16, p. 627 –629
- DOI: 10.1049/el:19800435
- Type: Article
- + Show details - Hide details
-
p.
627
–629
(3)
Dark field microscopy has proved a useful tool in the examination of weakly diffracting quasitransparent objects. The letter demonstrates a novel implementation of this technique in acoustic microscopy.
Optical cable fault location using correlation technique
- Author(s): K. Okada ; K. Hashimoto ; T. Shibata ; Y. Nagaki
- Source: Electronics Letters, Volume 16, Issue 16, p. 629 –630
- DOI: 10.1049/el:19800436
- Type: Article
- + Show details - Hide details
-
p.
629
–630
(2)
The letter describes a correlation based optical cable fault location technique which, using a 1.3 μm wavelength, can detect a broken point 10 km distant from source.
Novel method for high resolution measurement of laser output spectrum
- Author(s): T. Okoshi ; K. Kikuchi ; A. Nakayama
- Source: Electronics Letters, Volume 16, Issue 16, p. 630 –631
- DOI: 10.1049/el:19800437
- Type: Article
- + Show details - Hide details
-
p.
630
–631
(2)
The spectral spread of the best stabilised semiconductor lasers has been reduced to several megahertz. Conventional spectroscopy techniques cannot offer a spectral resolution fine enough for measuring such a sharp spectrum. The letter proposes a novel method by which 50 kHz resolution can be obtained. The principle, experimental set-up and results are described.
Optical time domain reflectometry by photon counting
- Author(s): P. Healey and P. Hensel
- Source: Electronics Letters, Volume 16, Issue 16, p. 631 –633
- DOI: 10.1049/el:19800438
- Type: Article
- + Show details - Hide details
-
p.
631
–633
(3)
A photon counting technique has been used to extend greatly the range of optical time domain reflectometry or ‘back-scatter’ for fault location in optical fibre systems. A range of more than 40 dB of one-way fibre loss has been achieved even when the break was index-matched to eliminate any reflection.
Optimisation of p+ doping level of n+-p-p+ bifacial b.s.f. solar cells by ion implantation
- Author(s): J. Eguren ; J. del Alamo ; A. Luque
- Source: Electronics Letters, Volume 16, Issue 16, p. 633 –634
- DOI: 10.1049/el:19800439
- Type: Article
- + Show details - Hide details
-
p.
633
–634
(2)
High-low junctions of n+-p-p+ bifacial back surface field solar cells have been fabricated by B11+ implantation. After an isothermal annealing step at 900°C for 10 min, an optimum surface concentration of 5 × 1019 cm−3 is observed. Its origin is found to lie in the partial electrical activation of the implanted impurities.
E-plane coupling between two rectangular microstrip antennas
- Author(s): C.M. Krowne
- Source: Electronics Letters, Volume 16, Issue 16, p. 635 –636
- DOI: 10.1049/el:19800440
- Type: Article
- + Show details - Hide details
-
p.
635
–636
(2)
A model which theoretically characterises end coupling (E-plane coupling) between two rectangular microstrip antennas is discussed. Computer generated S-parameter results for this particular type of mutual coupling are presented.
Novel bottom-plate stray-insensitive voltage inverter switch
- Author(s): D. Herbst and B.J. Hosticka
- Source: Electronics Letters, Volume 16, Issue 16, p. 636 –637
- DOI: 10.1049/el:19800441
- Type: Article
- + Show details - Hide details
-
p.
636
–637
(2)
A novel v.i.s. circuit is proposed which is insensitive to stray capacitances of the bottom plates of m.o.s. capacitors. This circuit configuration allows easy design of higher order filters.
Ion implanted GaAs bipolar transistors
- Author(s): H.T. Yuan ; F.H. Doerbeck ; W.V. McLevige
- Source: Electronics Letters, Volume 16, Issue 16, p. 637 –638
- DOI: 10.1049/el:19800442
- Type: Article
- + Show details - Hide details
-
p.
637
–638
(2)
GaAs n-p-n bipolar transistors were fabricated by ion implanting Be and Se into bulk n-type substrate material. Devices with mesa collectors exhibit a d.c. current gain hFE ≃ 8 and a reverse bias leakage current of less than 10 nA.
Graphical method for conduction loss calculation of tem transmission lines
- Author(s): J. Majer
- Source: Electronics Letters, Volume 16, Issue 16, p. 638 –639
- DOI: 10.1049/el:19800443
- Type: Article
- + Show details - Hide details
-
p.
638
–639
(2)
The graphical solution of the Laplace equation in the form of curvilinear squares is used to calculate the conduction loss of a single dielectric TEM line of any cross-section. A formula is given for calculation of the equivalent resistance R per unit length. The conduction loss factor is obtained from relation α = R/2Z, Z being the characteristic impedance of the line.
Novel f.d.n.c. simulation using current conveyors
- Author(s): K. Pal
- Source: Electronics Letters, Volume 16, Issue 16, p. 639 –641
- DOI: 10.1049/el:19800444
- Type: Article
- + Show details - Hide details
-
p.
639
–641
(3)
A grounded frequency dependent negative conductance (f.d.n.c.) has been simulated using only three passive components together with two second generation current conveyors (c.c.IIs). The proposed simulation is superior to earlier types.
Modified nodal approach to network sensitivity calculation for one-dimensional orthogonal search technique
- Author(s): J.T. Ogrodzki
- Source: Electronics Letters, Volume 16, Issue 16, p. 641 –642
- DOI: 10.1049/el:19800445
- Type: Article
- + Show details - Hide details
-
p.
641
–642
(2)
An efficient modified nodal approach to the calculation of small change sensitivities of denominators for bilinear network functions has been presented. The method is aimed at the one-dimensional orthogonal search technique.
Resistor rotators of bridged-and double-T type
- Author(s): Ognyan Stoyanov
- Source: Electronics Letters, Volume 16, Issue 16, p. 642 –643
- DOI: 10.1049/el:19800446
- Type: Article
- + Show details - Hide details
-
p.
642
–643
(2)
The letter contains the theoretical and experimental results from the investigation of new rotator types Their advantages include an unlimited rotation angle, the possibility of choosing the negative impedance optimum value, high stability and a simple circuit solution.
Erratum: Ultra wide bandwidth v.a.d. fibre
- Author(s): M. Nakahara ; S. Sudo ; N. Inagaki ; K. Yoshida ; S. Shibuya ; K. Kokura ; T. Kuroha
- Source: Electronics Letters, Volume 16, Issue 16, page: 644 –644
- DOI: 10.1049/el:19800447
- Type: Article
- + Show details - Hide details
-
p.
644
(1)
Erratum: New preprocessing technique for digital facsimile transmission
- Author(s): M.G.B. Ismail and R.J. Clarke
- Source: Electronics Letters, Volume 16, Issue 16, page: 644 –644
- DOI: 10.1049/el:19800448
- Type: Article
- + Show details - Hide details
-
p.
644
(1)
Erratum: Circularly polarised radiation from narrow wall slots in rectangular waveguide
- Author(s): D.R. Hill
- Source: Electronics Letters, Volume 16, Issue 16, page: 644 –644
- DOI: 10.1049/el:19800449
- Type: Article
- + Show details - Hide details
-
p.
644
(1)
Erratum: Adaptive pel location coding for bilevel facsimile signals
- Author(s): M.G.B. Ismail and R. Steele
- Source: Electronics Letters, Volume 16, Issue 16, page: 644 –644
- DOI: 10.1049/el:19800450
- Type: Article
- + Show details - Hide details
-
p.
644
(1)
Erratum: Stationary phase method for far-field computation of defocused reflector antennas
- Author(s): M.H.A.J. Herben ; R. Middelkoop ; F.J.J. Gielkens
- Source: Electronics Letters, Volume 16, Issue 16, page: 644 –644
- DOI: 10.1049/el:19800451
- Type: Article
- + Show details - Hide details
-
p.
644
(1)
Erratum: Dual gate GaAs m.e.s.f.e.t. phase shifter with gain at 12 GHz
- Author(s): C. Tsironis and P. Harrop
- Source: Electronics Letters, Volume 16, Issue 16, page: 644 –644
- DOI: 10.1049/el:19800452
- Type: Article
- + Show details - Hide details
-
p.
644
(1)
Erratum: Total dispersion in step-index monomode fibres
- Author(s): C.R. South
- Source: Electronics Letters, Volume 16, Issue 16, page: 644 –644
- DOI: 10.1049/el:19800453
- Type: Article
- + Show details - Hide details
-
p.
644
(1)
Erratum: Estimation of fringing capacitance of electrodes on s.i. GaAs substrate
- Author(s): A. Higashisaka and F. Hasegawa
- Source: Electronics Letters, Volume 16, Issue 16, page: 644 –644
- DOI: 10.1049/el:19800454
- Type: Article
- + Show details - Hide details
-
p.
644
(1)
Erratum: Integrated nonuniform thin-film bandpass filter
- Author(s): K.U. Ahmed and H.R. Singh
- Source: Electronics Letters, Volume 16, Issue 16, page: 644 –644
- DOI: 10.1049/el:19800455
- Type: Article
- + Show details - Hide details
-
p.
644
(1)
Most viewed content for this Journal
Article
content/journals/el
Journal
5
Most cited content for this Journal
-
Extreme multistability in a memristive circuit
- Author(s): Bo-Cheng Bao ; Quan Xu ; Han Bao ; Mo Chen
- Type: Article
-
Absorptive frequency selective surface using parallel LC resonance
- Author(s): Qiang Chen ; Liguo Liu ; Liang Chen ; Jiajun Bai ; Yunqi Fu
- Type: Article
-
Partial spectral search-based DOA estimation method for co-prime linear arrays
- Author(s): Fenggang Sun ; Peng Lan ; Bin Gao
- Type: Article
-
Experimental verification of on-chip CMOS fractional-order capacitor emulators
- Author(s): G. Tsirimokou ; C. Psychalinos ; A.S. Elwakil ; K.N. Salama
- Type: Article
-
54 Gbit/s OOK transmission using single-mode VCSEL up to 2.2 km MMF
- Author(s): G. Stepniak ; A. Lewandowski ; J.R. Kropp ; N.N. Ledentsov ; V.A. Shchukin ; N. Ledentsov Jr. ; G. Schaefer ; M. Agustin ; J.P. Turkiewicz
- Type: Article
