Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 15, Issue 20, 27 September 1979
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Volume 15, Issue 20
27 September 1979
Digraph analysis of large-scale systems: the system primitive
- Author(s): F.J. Evans and C. Schizas
- Source: Electronics Letters, Volume 15, Issue 20, p. 613 –614
- DOI: 10.1049/el:19790437
- Type: Article
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Mapping differential equations into digraphs is shown to give additional insight into system properties, such as controllability and observability. The concept of the system primitive is introduced.
Evaluation of the transient response of linear stationary systems to a class of excitations
- Author(s): M.M. Milić and M.V. Gmitrović
- Source: Electronics Letters, Volume 15, Issue 20, p. 614 –615
- DOI: 10.1049/el:19790438
- Type: Article
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A procedure is presented to evaluate the transient response of linear stationary systems to a class of excitations with Laplace transforms that are not rational functions. The procedure extends Liou's state-space approach which is limited to time functions whose Laplace transforms are rational functions.
Birefringence in elliptically deformed optical fibres
- Author(s): J.D. Love ; R.A. Sammut ; A.W. Snyder
- Source: Electronics Letters, Volume 15, Issue 20, p. 615 –616
- DOI: 10.1049/el:19790439
- Type: Article
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The phase difference between the two polarisation states of the fundamental mode on a slightly elliptical, weakly guiding fibre is derived using both an exact analysis and perturbation theory. Deficiences in some earlier calculations are also discussed.
Very low OH content P2O5-doped silica fibres
- Author(s): Yasuji Ohmori ; Hisaaki Okazaki ; Iwao Hatakeyama ; Hisao Takata
- Source: Electronics Letters, Volume 15, Issue 20, p. 616 –618
- DOI: 10.1049/el:19790440
- Type: Article
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Very low OH content optical fibres consisting of P2O5-doped silica core and GeO2-P2O5-B2O3-doped silica cladding were fabricated by the m.c.v.d. technique. The relation between the OH absorption loss and the deposition temperature was clarified. The OH content in this fibre could be reduced to about seven parts per billion (∼ 7 × 10−9) by using a low deposition temperature.
Transfer functions with equiripple passband and very low Q-factor for economical active filters
- Author(s): R. Marquardt
- Source: Electronics Letters, Volume 15, Issue 20, p. 618 –619
- DOI: 10.1049/el:19790441
- Type: Article
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A class of all-pole transfer functions is presented which has controllable passband ripple and good stopband attenuation. Their main advantage is that lowpass and highpass functions can be realised with very simple circuits, and the sensitivity to element changes is reduced to unusually low levels.
Effects of ion implantation on deep levels in GaAs
- Author(s): T.R. Jervis ; D.W. Woodard ; L.F. Eastman
- Source: Electronics Letters, Volume 15, Issue 20, p. 619 –621
- DOI: 10.1049/el:19790442
- Type: Article
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We have studied the effects of ion implantation in GaAs using the techniques of deep-level transient spectroscopy. Samples included an unimplanted epitaxial buffer layer, a sample implanted directly into that buffer layer and then capped with Si3N4, a sample implanted into that buffer layer through a similar cap, and a sample implanted directly into a semi-insulating substrate and then capped. All implants were with Si29 and both types of implant were annealed at 860°C for fifteen minutes. We find that the total density of deep levels is not changed significantly by direct implantation, capping and annealing but that implantation through a cap greatly in creases the total deep-level concentration. Deep levels found in implanted layers after capping and annealing are primarily characteristic of the substrate or buffer layer into which the implantation is made, unless the implant is through a cap in which case contaminants from the capping process may be evident at high densities.
Low-threshold (Ga,In)(As,P) d.h. lasers emitting at 1.55 μm grown by l.p.e.
- Author(s): G.D. Henshall and P.D. Greene
- Source: Electronics Letters, Volume 15, Issue 20, p. 621 –622
- DOI: 10.1049/el:19790443
- Type: Article
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Threshold current densities as low as 2.13 kA cm−2 have been achieved in broad-contact double-heterostructure lasers with an emission wavelength of 1.55 μm. The three-layer structure was grown by liquid-phase epitaxy and contained a quaternary active layer 0.6 μm thick and a p-type quaternary upper confining layer with a bandgap of 1.05 eV. The normalised threshold current density was 3.5 kA cm−2 μm−1.
Electrochemical carrier concentration profiling in silicon
- Author(s): C.D. Sharpe ; P. Lilley ; C.R. Elliott ; T. Ambridge
- Source: Electronics Letters, Volume 15, Issue 20, p. 622 –624
- DOI: 10.1049/el:19790444
- Type: Article
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The application to silicon of an electrochemical technique, allowing automatic profiling over large depths and a wide range of carrier concentration, is described.
Double-sided least-squares problem
- Author(s): K.V.M. Fernando and H. Nicholson
- Source: Electronics Letters, Volume 15, Issue 20, p. 624 –625
- DOI: 10.1049/el:19790445
- Type: Article
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The double-sided least-squares problem is formulated under a separability condition, using the properties of the Kronecker product to obtain the overall solution based on two standard subproblems.
Structure simplification of optical isolator coupled with laser diode
- Author(s): Takao Matsumoto
- Source: Electronics Letters, Volume 15, Issue 20, p. 625 –627
- DOI: 10.1049/el:19790446
- Type: Article
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By taking into account the polarisation-dependent effect of reflected light on the characteristics of laser diodes, the structure of optical isolators which are directly coupled with laser diodes is shown to be simplified. Such a device is experimentally confirmed to operate as an isolator.
Novel microwave GaAs field-effect transistors
- Author(s): J.C. Vokes ; B.T. Hughes ; D.R. Wight ; J.R. Dawsey ; S.J.W. Shrubb
- Source: Electronics Letters, Volume 15, Issue 20, p. 627 –629
- DOI: 10.1049/el:19790447
- Type: Article
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A technology is described for the fabrication of Schottky-barrier f.e.t.s with electrodes on either or both sides of a submicrometre thick single-crystal layer of GaAs. Preliminary d.c. and microwave results are given together with possible advantages of these novel f.e.t. structures.
Preparation and properties of GaAs layers for novel f.e.t. structures
- Author(s): R.J.M. Griffiths ; I.D. Blenkinsop ; D.R. Wight
- Source: Electronics Letters, Volume 15, Issue 20, p. 629 –630
- DOI: 10.1049/el:19790448
- Type: Article
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N-type GaAs/Ga0.4Al0.6As heterostructures have been grown on semi-insulating GaAs substrates using metal-organic chemical vapour deposition. The GaAs layers were mounted on insulator supports and the substrates and Ga0.4Al0.6As removed using a preferential etching procedure. The preparation and electrical properties of submicrometre thick insulator-supported n-type GaAs layers are described.
Coefficient correction in programmable c.c.d. recursive filters
- Author(s): T.G. Tang ; Y.T. Yeow ; J. Mavor
- Source: Electronics Letters, Volume 15, Issue 20, p. 630 –632
- DOI: 10.1049/el:19790449
- Type: Article
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A technique for correcting coefficient errors in c.c.d. recursive filters is described. The technique is demonstrated on a programmable second-order Chebyshev lowpass filter.
Influence of waveguide effects on pulse-delay measurements of material dispersion in optical fibres
- Author(s): A.H. Hartog
- Source: Electronics Letters, Volume 15, Issue 20, p. 632 –634
- DOI: 10.1049/el:19790450
- Type: Article
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The effect of the waveguide structure on pulse-delay measurements of material dispersion in optical fibres is examined. It is shown that waveguide dispersion has only a small influence on the measured values and introduces an uncertainty in the wavelength of zero material dispersion of order ±3 nm.
M.O.S. switched-capacitor amplifiers
- Author(s): T.R. Viswanathan ; S.M. Faruque ; K. Singhal ; J. Vlach
- Source: Electronics Letters, Volume 15, Issue 20, p. 634 –635
- DOI: 10.1049/el:19790451
- Type: Article
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Switched-capacitor voltage gain elements, in which the gain is precisely controlled by the ratio of two capacitors, are presented. The voltage gain is obtained by means of a transconductance element operating into a switched-capacitor resistor. Circuit configurations use a single operational amplifier or a unity-gain buffer. In some of these configurations, the offset voltage of the operational amplifier or the buffer is not amplified.
Nondestructive determination of refractive-index profile and cross-sectional geometry of optical-fibre preform
- Author(s): P.L. Chu and C. Saekeang
- Source: Electronics Letters, Volume 15, Issue 20, p. 635 –637
- DOI: 10.1049/el:19790452
- Type: Article
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A nondestructive method is presented to determine simultaneously the refractive-index profile and the cross-sectional geometry of a preform. In this method, a plane wave is made to impinge on the preform laterally and the power distribution of the scattered pattern is recorded. From the recorded power, the ray pathlength difference is calculated. After the preform has been rotated through 360° and the necessary data collected, a numerical inversion is performed to obtain the index profile and cross-sectional geometry.
Surface impedance of elliptical hollow conducting waveguides
- Author(s): S.R. Rengarajan and J.E. Lewis
- Source: Electronics Letters, Volume 15, Issue 20, p. 637 –639
- DOI: 10.1049/el:19790453
- Type: Article
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Currently the literature describes two approaches to the determination of power loss in the hollow metallic elliptical waveguide. The well known perturbation method employing the intrinsic impedance of the metal has frequently been used, and an η-dependent surface impedance in two different forms has recently been proposed by several workers. In this work it is suggested that sufficient evidence exists to indicate that the η-dependent formulation is unnecessary.
Omnidirectional s.h.f. antenna consisting of horn radiators and plane reflectors
- Author(s): H. Thielen
- Source: Electronics Letters, Volume 15, Issue 20, p. 639 –640
- DOI: 10.1049/el:19790454
- Type: Article
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A microwave transmitting antenna with omnidirectional pattern in the horizontal plane is described which consists of six horn radiators and six plane reflectors arranged in a hexagonal configuration. Each reflector illuminates an azimuthal sector of approximately 60°. If therefore, a sector-shaped horizontal pattern is required, less than six reflectors need to be provided.
Modulo-N counter technique for the u.h.f. band
- Author(s): J.B. Hughes ; E.S. Eilley ; G.J. Glynn
- Source: Electronics Letters, Volume 15, Issue 20, p. 640 –641
- DOI: 10.1049/el:19790455
- Type: Article
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A technique is described for implementing modulo-N counters with u.h.f. performance using commercially available e.c.l. components and a high-speed digital multiplexer. A modulo-5 counter is designed according to this technique and performance at 1.6 GHz is demonstrated.
Appraisal of the inverted-mesa AT-cut quartz resonator for achieving low-inductance high-Q single-response crystal units
- Author(s): J. Birch and S.P. Marriott
- Source: Electronics Letters, Volume 15, Issue 20, p. 641 –643
- DOI: 10.1049/el:19790456
- Type: Article
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A novel design for v.h.f. AT-cut quartz-crystal units is described which enables optimum energy-trapping conditions to be achieved with less restriction in the choice of equivalent electrical parameters than is usual for conventional units. The good suppression of unwanted modes, low inductance values and potentially good frequency stability of this type of unit should lead to its application in both oscillators and filters.
Variation of lange-coupler geometry with dielectric constant
- Author(s): R. Horton
- Source: Electronics Letters, Volume 15, Issue 20, p. 643 –644
- DOI: 10.1049/el:19790457
- Type: Article
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Geometry of the −3 dB, 50Ω Lange coupler is presented as a continuous function of dielectric constant, between ɛr=2 and 12. Corresponding even- and odd-mode phase velocities are also given, allowing the length of coupled section to be calculated.
Switched-capacitor filters using floating-inductance simulation circuits
- Author(s): Man Shek lee
- Source: Electronics Letters, Volume 15, Issue 20, p. 644 –645
- DOI: 10.1049/el:19790458
- Type: Article
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A switched-capacitor floating-inductance-simulation circuit which is insensitive to parasitic capacitances, and a ladder-filter design technique using the simulation circuit, are presented. As an application, a lowpass filter realisation is described.
Enhancement- and depletion-mode vertical-channel m.o.s. gated thyristors
- Author(s): B. Jayant Baliga
- Source: Electronics Letters, Volume 15, Issue 20, p. 645 –647
- DOI: 10.1049/el:19790459
- Type: Article
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A new gate structure is described for power thyristors which uses the m.o.s. field effect to control the anode breakover voltage. Experimental devices have been fabricated using a V-groove etched in (100) oriented wafers and forming the gate in these grooves. Both enhancement- and depletion-mode devices have been demonstrated.
Automatic electrochemical profiling of carrier concentration in indium phosphide
- Author(s): T. Ambridge and D.J. Ashen
- Source: Electronics Letters, Volume 15, Issue 20, p. 647 –648
- DOI: 10.1049/el:19790460
- Type: Article
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The technique of carrier concentration profiling over a wide doping and depth range, via automatic C/V analysis and disolution at an electrolytic Schottky barrier, is here demonstrated for indium phosphide
Automatic electrochemical profiling of Hall mobility in semiconductors
- Author(s): T. Ambridge and C.J. Allen
- Source: Electronics Letters, Volume 15, Issue 20, p. 648 –650
- DOI: 10.1049/el:19790461
- Type: Article
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High-resolution automatic profiling of Hall mobility in semiconductors is achieved through the use of an electrolytic contact, both as a Schottky gate and as a means of controlled dissolution. Application to multilayer m.b.e. GaAs is shown as an example.
Comment: Alternative approach to the design of switched-capacitor filters
- Author(s): J.J. Hill
- Source: Electronics Letters, Volume 15, Issue 20, page: 650 –650
- DOI: 10.1049/el:19790462
- Type: Article
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GaAs f.e.t. transimpedance front-end design for a wideband optical receiver
- Author(s): K. Ogawa and E.L. Chinnock
- Source: Electronics Letters, Volume 15, Issue 20, p. 650 –652
- DOI: 10.1049/el:19790463
- Type: Article
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A GaAs f.e.t. transimpedance front-end amplifier was built and operated as part of a regenerator at 274 Mb/s. The noise characteristics were optimised for operation with a Ge photodiode at 1.32 μm, but were measured at 0.82 μm to compare Si and Ge photodiodes. The amplifier input capacitance was 3.2 pF with the Si p-i-n diode and 4.6 pF with the Ge diode. At 0.82 μm, we measured a sensitivity for 10−9 error rate of about −35 dBm with the Si diode and −32 dBm with the Ge diode. We predict a sensitivity of −34 dBm at 1.32 μm.
Elliptical corrugated horn for broadcasting-satellite antennas
- Author(s): V.J. Vokurka
- Source: Electronics Letters, Volume 15, Issue 20, p. 652 –654
- DOI: 10.1049/el:19790464
- Type: Article
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A corrugated elliptical horn suitable for space application has been designed and experimentally investigated. It is shown that this horn gives an elliptical far-field power pattern which is almost independent of the polarisation direction. The crosspolarisation behaviour is similar to that of corrugated horns of circular cross-section.
Seasonal variations of attenuation statistics in millimetre-wave Earth-satellite link due to bright-band height
- Author(s): Masaharu Fujita ; Kenji Nakamura ; Toshio Ihara ; Risao Hayashi
- Source: Electronics Letters, Volume 15, Issue 20, p. 654 –655
- DOI: 10.1049/el:19790465
- Type: Article
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The effect of rain-cell top heights (which can be roughly estimated from the ground temperature) on the attenuation of a millimetre wave is presented using a newly defined concept, the ‘mean effective path length’, with relation to the ground rain rate. This suggests the possibility of estimating attenuation statistics in each season.
InGaAsP p-i-n photodiodes with low dark current and small capacitance
- Author(s): C.A. Burrus ; A.G. Dentai ; T.P. Lee
- Source: Electronics Letters, Volume 15, Issue 20, p. 655 –656
- DOI: 10.1049/el:19790466
- Type: Article
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p-i-n photodiodes with ND as low as 1−2×1015 cm−3 in the I-region were fabricated from InGaAsP (λ=1.26 μm). At −20 V, the 2.5 μm I-region of the 150 μm diameter mesas was completely swept out, the junction capacitance was below 1 pF, the dark current was less than 0.2 nA and the external quantum efficiency was 63% without a.r. coatings.
Arbitrary polarisation microwave receiver applied to OTS reception
- Author(s): A.P. Alves and N.J. McEwan
- Source: Electronics Letters, Volume 15, Issue 20, p. 657 –658
- DOI: 10.1049/el:19790467
- Type: Article
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A technique is described for reception of an arbitrary polarisation or simultaneous different polarisations using a suitable dual-channel receiver with a linearly polarised o.m.t. This is now being used for propagation experiments using the linearly and circularly polarised beacons on OTS.
Exact surface impedance for a cylindrical conductor
- Author(s): James R. Wait
- Source: Electronics Letters, Volume 15, Issue 20, p. 659 –660
- DOI: 10.1049/el:19790468
- Type: Article
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We use the rigorous field expressions for a cylindrical conductor with arbitrary excitation to obtain an exact expression for the surface-impedance matrix. This is used as the basis for the development of the approximate representations that have engineering usefulness. Their limitations are indicated.
Design of optimal controller for linear single-input system
- Author(s): Lim Choo Min and B.S. Habibullah
- Source: Electronics Letters, Volume 15, Issue 20, p. 660 –661
- DOI: 10.1049/el:19790469
- Type: Article
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The design of an optimal controller for a linear single-input system to provide at least a degree α of system stability,2 that is Re (π) < −α, is considered. It is illustrated that such a method may be used to shift only the dominant eigenvalues of a power system to the left of the complex plane
Baseband compatible s.a.w. processors
- Author(s): G.F. Manes and C. Atzeni
- Source: Electronics Letters, Volume 15, Issue 20, p. 661 –663
- DOI: 10.1049/el:19790470
- Type: Article
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A nonlinear acoustic tapped delay line is shown to be capable of providing signal processing at baseband data format via a classical amplitude-modulation/demodulation process; compatibility with baseband-operating analogue/digital arithmetic units is simply and directly achieved, thus resulting in a potentially attractive alternative to existing techniques for programmable transversal filtering implementation.
Recombination in gallium phosphide via a deep state associated with nickel
- Author(s): A.R. Peaker ; R.F. Brunwin ; P. Jordon ; B. Hamilton
- Source: Electronics Letters, Volume 15, Issue 20, p. 663 –664
- DOI: 10.1049/el:19790471
- Type: Article
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The properties of nickel in gallium phosphide are discussed in terms of its behaviour as a recombination centre. Although it possesses a large minority-carrier cross-section and is present in v.p.e. material in quite large concentrations, it is found to have a very low majority-carrier cross-section so that the recombination rate saturates at low excitation densities. Thus the centre is unlikely to be of importance in the recombination process in normal l.e.d. structures.
Generalised correlation model for designing 2-dimensional image coders
- Author(s): Wolfgang Mauersberger
- Source: Electronics Letters, Volume 15, Issue 20, p. 664 –665
- DOI: 10.1049/el:19790472
- Type: Article
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The design of a 2-dimensional image coder is based on a model of the correlation of adjacent picture elements. The most often used models, the separable and the isotropic correlation model, yield no optimal performance. Thus, a generalised correlation model is developed. The parameters are optimised with respect to the statistics of 14 digitised pictures.
Preliminary c.w. reliability measurements on GaAs-(GaAl)As stripe lasers grown by metal-organic c.v.d.
- Author(s): E.J. Thrush and J.E.A. Whiteaway
- Source: Electronics Letters, Volume 15, Issue 20, p. 666 –667
- DOI: 10.1049/el:19790473
- Type: Article
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Oxide-insulated 20 μm planar stripe-geometry lasers were fabricated from a double heterostructure GaAs-(GaAl)As wafer grown by metal-organic chemical vapour deposition. Preliminary c.w. life tests have been carried out on these lasers, and 1400 h of operation has been achieved with only 19% increase in threshold current.
New equal-valued earthed-capacitor notch network using d.v.c.c.s./d.v.c.v.s.
- Author(s): R. Nandi
- Source: Electronics Letters, Volume 15, Issue 20, p. 667 –668
- DOI: 10.1049/el:19790474
- Type: Article
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Using the differential voltage-controlled current/differential voltage-controlled voltage source (d.v.c.c.s./d.v.c.v.s.) as the active element, a new active RC notch network is described. The network has two equal-valued earthed capacitors and the pole Q can be adjusted by single resistive control independent of the realisability condition.
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