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Online ISSN 1350-911X Print ISSN 0013-5194

Electronics Letters

Volume 15, Issue 19, 13 September 1979

Volumes & issues:

Volume 15, Issue 19

13 September 1979

Periodic slow-wave low-loss structures for monolithic GaAs microwave integrated circuits
Joint parameter/state estimation
Fundamental charge distributions for surface-wave interdigital transducer analysis
  • Author(s): D.P. Morgan ; B. Lewis ; J.G. Metcalfe
  • Source: Electronics Letters, Volume 15, Issue 19, p. 583 –585
  • DOI:  10.1049/el:19790419
  • Type: Article
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  • p. 583 –585 (3)
    The response of transducers with arbitrary polarity sequences can be expressed simply, allowing for electrostatic neighbour effects, by using as an element factor the charge distribution obtained for excitation of one electrode. New calculations of this element factor are presented for a range of metallisation ratios. Treating interelectrode gaps as elementary sources gives an element factor which is less dependent on frequency.
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Comment: Analytic expression for the frequency response and bandwidth of a spherical random array
Reply: Analytic expression for the frequency response and bandwidth of a spherical random array
Influence of central valley effective mass and alloy scattering on transient drift velocity in Ga1−xInxP1−yAsy
  • Author(s): M.A. Littlejohn ; L.A. Arledge ; T.H. Glisson ; J.R. Hauser
  • Source: Electronics Letters, Volume 15, Issue 19, p. 586 –588
  • DOI:  10.1049/el:19790422
  • Type: Article
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  • p. 586 –588 (3)
    The instantaneous ensemble-averaged and time-averaged velocity of electrons are presented for Ga0.27In0.73P0.4As0.6, and the results are compared to those for GaAs. The results indicate that both the effective mass in the Γ conduction band and alloy scattering are very critical in determining the transient (or velocity-overshoot) characteristic as well as the static velocity-field characteristic for this quaternary material.
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Improved algorithm for probe-corrected spherical near-field/far-field transformation
Analysis of approximations for the mode dispersion in monomode fibres
Pulsed GaAs f.e.t. operation for high peak output powers
  • Author(s): P.C. Wade ; D. Rutkowski ; I. Drukier
  • Source: Electronics Letters, Volume 15, Issue 19, p. 591 –593
  • DOI:  10.1049/el:19790425
  • Type: Article
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  • p. 591 –593 (3)
    Significant increases in GaAs f.e.t. X-band power output are made possible by pulsed operation, using pulse durations sufficiently short that thermal limitations are alleviated. Significantly higher-voltage operation is also possible under these conditions, with further improvement in power output and gain. As much as 5.9 W of peak power output has been obtained at 8 GHz from a device capable of 2.5 W c.w. output at 6 GHz.
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Remarks on the convolution algorithm of Agarwal and Cooley
Direct modulation characteristics of GaInAsP/InP d.h. lasers with various stripe widths measured by sharp-pulse method
Modulation characteristics of 1.3 μm buried-stripe InGaAsP laser up to 2 Gbit/s data rates
  • Author(s): Jun-Ichi Yamada ; Susumu Machida ; Takaaki Mukai ; Hiroyuki Kano ; Koichi Sugiyama
  • Source: Electronics Letters, Volume 15, Issue 19, p. 596 –597
  • DOI:  10.1049/el:19790428
  • Type: Article
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  • p. 596 –597 (2)
    Modulation experimenting on a buried-stripe (b.s.) InGaAsP laser emitting at 1.3 μm was carried out up to 2 Gbit/s. The b.s. laser is free from relaxation oscillation, which degrades modulated optical pube waveforms, especially at high data rates. The repeater gain of 1.6 Gbit/s transmission systems is improved by 9 dB compared with previously reported experiments. Modulation characteristics up to 2 Gbit/s are reported.
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Nonlinear circuit analysis through periodic spline approximation
Small-area GaAs-GaAlAs heterostructure light-emitting diode with improved current confinement
  • Author(s): M.-C. Amann  and  W. Proebster
  • Source: Electronics Letters, Volume 15, Issue 19, p. 599 –600
  • DOI:  10.1049/el:19790430
  • Type: Article
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  • p. 599 –600 (2)
    A new type of high-radiance GaAs-GaAlAs heterostructure light-emitting diode (l.e.d.) with confinement of the light-emitting area by contact resistance is described. Single heterostructure l.e.d.s of this type with active-region doping of p=3×1018 cm−3 exhibit external quantum efficiency of 1% and a 3 dB modulation cutoff frequency of 66 MHz. Second-harmonic distortion was measured at below 40 dB at a 30 mA peak-peak modulation current and 50 mA direct current (=7.0 kA/cm2).
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Equivalent circuits for high-frequency sonar transducers
On-resistance of V-v.m.o.s. power transistors
Cumulative crosspolarisation and canting angle distributions
  • Author(s): I.J. Dilworth  and  B.G. Evans
  • Source: Electronics Letters, Volume 15, Issue 19, p. 603 –604
  • DOI:  10.1049/el:19790433
  • Type: Article
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  • p. 603 –604 (2)
    Using measured crosspolarisation against attenuation measurements at 11.6 GHz in three polarisation states over a three-year period and a theoretical rain model, long-term canting-angle statistics are derived. A Gaussian distribution in the normal propagation plane with mean 8.5° and standard deviation 43°, together with a rotation of this plane by an angle determined by the prevailing wind condition, is found to fit the data. This may be used to predict long-term cross-polarisation statistics.
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Surface stability of GaAs during tin diffusion
  • Author(s): Brian Tuck  and  M.H. Badawi
  • Source: Electronics Letters, Volume 15, Issue 19, p. 604 –606
  • DOI:  10.1049/el:19790434
  • Type: Article
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  • p. 604 –606 (3)
    Experiments are described in which tin was diffused into GaAs in a closed ampoule. When the ambient arsenic vapour pressure was low the results were not reproducible, and severe deterioration of the surface was observed. Evidence is produced which suggests that both evaporation and condensation occurred during these diffusions. The problem was completely solved by employing a high-vapour pressure of arsenic. It is suggested that a gallium-rich surface is less stable than one which is arsenic-rich.
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Room temperature c.w. operation of InGaAsP/InP heterostructure lasers emitting at 1.56 μm
Multimode fibre baseband frequency response measurement with single frequency output extracted from modulated InGaAsP laser
  • Author(s): S. Machida ; N. Imoto ; Y. Ohmori
  • Source: Electronics Letters, Volume 15, Issue 19, p. 607 –609
  • DOI:  10.1049/el:19790436
  • Type: Article
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  • p. 607 –609 (3)
    A new method to measure multimode fibre frequency response is presented by using a single longitudinal mode extracted from modulated semiconductor laser output. Intensity fluctuation noise, caused by r.f. modulation, is utilised as a broadband baseband signal. Baseband frequency response of a 1.98 km graded-index fibre is measured up to 1.5 GHz in 1.1–1.5 μm wavelength region. This method provides a simple and accurate measurement of intermodal dispersion excluding chromatic dispersion effect.
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