Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 15, Issue 14, 5 July 1979
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Volume 15, Issue 14
5 July 1979
Lens-type compact antenna range
- Author(s): A.D. Olver and A.A. Saleeb
- Source: Electronics Letters, Volume 15, Issue 14, p. 409 –410
- DOI: 10.1049/el:19790293
- Type: Article
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A compact antenna range is described which uses a plastic foam lens to obtain a collimated beam within which the radiation pattern of a test antenna can be measured. A novel feature is the introduction of a controlled amount of loss into the lens so that a nearly uniform electric field is measured over a high proportion of the lens aperture.
Novel method for measuring cutoff wavelength of HE21-, TE01-and TM01-modes
- Author(s): Yasuyuki Kato ; Ken-Ichi Kitayama ; Shigeyuki Seikai ; Naoya Uchida
- Source: Electronics Letters, Volume 15, Issue 14, p. 410 –411
- DOI: 10.1049/el:19790294
- Type: Article
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A new measurement method for the cutoff wavelength of HE21-, TE01-and TM01 modes using a polariser is described. The experimental results show that higher measurement accuracy and sensitivity are obtained compared with the previous method.
Preparation of long lengths of ultra-low-loss single-mode fibre
- Author(s): B.J. Ainslie ; C.R. Day ; P.W. France ; K.J. Beales ; G.R. Newns
- Source: Electronics Letters, Volume 15, Issue 14, p. 411 –413
- DOI: 10.1049/el:19790295
- Type: Article
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Single-mode m.c.v.d. fibres have been prepared in lengths of up to 10 km by incorporating easily sinterable cladding layers of both boron-phosphorus-and fluorine-phosphorus-doped silica. Minimum losses of 0.6 to 0.7 dB/km have been achieved in the wavelength range 1.1 to 1.7 μm.
Laser annealing of capped and uncapped GaAs
- Author(s): S.S. Kular ; B.J. Sealy ; M.H. Badawi ; K.G. Stephens ; D. Sadana ; G.R. Booker
- Source: Electronics Letters, Volume 15, Issue 14, p. 413 –414
- DOI: 10.1049/el:19790296
- Type: Article
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Ion-implanted GaAs samples have been annealed using a Q-switched ruby laser. Both Si3N4 capped and uncapped samples decomposed and gallium precipitates were formed at the surface. The gallium could be removed by dissolution in HCl to leave high-quality GaAs.
Multireflection optical multi/demultiplexer using interference filters
- Author(s): Kiyoshi Nosu ; Hideki Ishio ; Kunio Hashimoto
- Source: Electronics Letters, Volume 15, Issue 14, p. 414 –415
- DOI: 10.1049/el:19790297
- Type: Article
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–415
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A multireflection multi/demultiplexer using interference filters is proposed. Light waves of different wavelengths are combined or separated while they propagate between two filter arrays. The insertion loss of the 6-channel demultiplexer was around 1dB.
Voltage transfer function realisation using active R network: flow-graph technique
- Author(s): Stanislaw Osowski
- Source: Electronics Letters, Volume 15, Issue 14, p. 416 –417
- DOI: 10.1049/el:19790298
- Type: Article
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A new active R network realising the nth-order voltage transfer function is presented. A synthesis technique based on the flow-graph representation is given.
GaAs power m.e.s.f.e.t.s. with a graded recess structure
- Author(s): Takashi Furutsuka ; Asamitsu Higashisaka ; Yoichi Aono ; Yoichiro Takayama ; Fumio Hasegawa
- Source: Electronics Letters, Volume 15, Issue 14, p. 417 –418
- DOI: 10.1049/el:19790299
- Type: Article
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A new recess structure device was developed to improve the field distrubution and therfore the performance of GaAs power m.e.s.f.e.t.s. The linear gain and the output power were improved by 1–2 dB for this structure. The highest output powers obtained are 15 W with 4 dB associated gain at 6 GHz, and 4.3 W with 3 dB associated gain at 11 GHz.
Input impedance of thin dipoles by moment method
- Author(s): R. Neri
- Source: Electronics Letters, Volume 15, Issue 14, p. 418 –420
- DOI: 10.1049/el:19790300
- Type: Article
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The input impedance of half-wave dipoles with decreasing diameters has been calculated using the moment method of analysis with a stepped approximation of the current distribution. It is shown that the solution becomes increasingly inaccurate when the wire radius decreases and only a few segments for the antenna are used, and that it also diverges from the accurate answer when the length/diameter ratio of each segment is such that the axial-line-current and charge approximations become insufficient.
Changes in annealing behaviour of SiO2 on Si resulting from H2+ and D2+ ion bombardment
- Author(s): J. Belson and I.H. Wilson
- Source: Electronics Letters, Volume 15, Issue 14, p. 420 –421
- DOI: 10.1049/el:19790301
- Type: Article
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Thermal oxides on 2–6 Ωcm Si have been bombarded with 40 keV H2+ and 80 keV D2+ ions at almost grazing incidence (7.5°) to doses of 1015 ions cm−2. Anneals (30 and 45 min) were carried out in an r.f. furnace between 400 and 700°C in dry flowing N2 Implantation and subsequent annealing of bare oxide does not produce a Si/SiO2 structure which is superior to an Al/Si/SiO2 structure sintered at 400°C in dry N2. Implantation does however appear to suppress the development of large interface state densities at temperatures of 550°C and above, within the range investigated.
Dipole-excited short backfire antenna with corrugated RIM
- Author(s): P.S. Kooi ; M.S. Leong ; T.S. Yeo
- Source: Electronics Letters, Volume 15, Issue 14, p. 421 –423
- DOI: 10.1049/el:19790302
- Type: Article
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This letter reports results of an experimental study at X-band of a dipole-excited short backfire antenna having corrugations on the main reflector rim. The results obtained show that the presence of the corrugations can lead to improved antenna gain and sidelobe levels.
Reflection circular polarisers
- Author(s): E.V. Jull
- Source: Electronics Letters, Volume 15, Issue 14, p. 423 –424
- DOI: 10.1049/el:19790303
- Type: Article
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–424
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Conducting surfaces corrugated with rectangular grooves which convert linearly polarised incident waves to circular polarisation are described. Design data for normal incidence and for incidence at 45° to the normal are given.
Demountable multiple connector with precise V-grooved silicon
- Author(s): Y. Fujii ; J. Minowa ; N. Suzuki
- Source: Electronics Letters, Volume 15, Issue 14, p. 424 –425
- DOI: 10.1049/el:19790304
- Type: Article
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–425
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A demountable multiple connector using a precision V-grooved silicon chip has been developed. The average connection loss was 0.8 dB, including fibre end reflection. The connection losses were reduced by about 0.4 dB by using a matching fluid.
Resistive hybrid matrix realisation using operational amplifiers
- Author(s): S. Osowski
- Source: Electronics Letters, Volume 15, Issue 14, p. 426 –427
- DOI: 10.1049/el:19790305
- Type: Article
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–427
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A new realisation structure for an arbitrary hybrid matrix H of resistive n-port networks using resistors and operational amplifiers is proposed in this letter.
Low-loss 4 × 4 optical matrix switch for fibre-optic communication
- Author(s): Y. Fujii ; J. Minowa ; T. Aoyama ; K. Doi
- Source: Electronics Letters, Volume 15, Issue 14, p. 427 –428
- DOI: 10.1049/el:19790306
- Type: Article
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–428
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A low-loss and high-repeatability 4 × 4 optical matrix switch fabricated by using rhombic glass-block switch elements is described. The maximum loss was 1.3 dB and the crosstalk was less than −55 dB, with a switching delay of less than 18 ms.
Quality test of semiconductor memories by jitter measurement
- Author(s): Horst RÖder
- Source: Electronics Letters, Volume 15, Issue 14, p. 428 –429
- DOI: 10.1049/el:19790307
- Type: Article
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This letter states the results form the application of a jitter measuring method suited to the quality testing of electronic semiconductor memories. A description is given of a jitter measuring apparatus which enables detection of latent defects in semiconductor memories.
Correlation technique for improved isolation of overlapping spectra in video modulators
- Author(s): A.J. Clapton
- Source: Electronics Letters, Volume 15, Issue 14, p. 429 –430
- DOI: 10.1049/el:19790308
- Type: Article
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The magnitude of through-signal leak in a video modulator is detected by performing a cross-correlation between output and input in the band below the wanted output spectrum; the result is fed back to adjust the d.c. bias conditions on the modulator to reduce the leak. The technique was applied in this case to the modulation of 1 MHz video signals into a hypergroup band.
Arbitre N-utilisateurs, une ressource, programmable. One-step N-user programmable arbiter
- Author(s): M. Courvoisier
- Source: Electronics Letters, Volume 15, Issue 14, p. 430 –432
- DOI: 10.1049/el:19790309
- Type: Article
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Cette lettre décrit un arbitre n-utilisateurs une-ressource pour lequel la stratégie d'arbitrage est programmable. Sa conception synchrone en fait un circuit facile à intégrer en un seul boitier, et donc bien adapté à des structures multimicroprocesseurs.In this letter, an n-user one-step programmable arbiter is described. Priority rules are defined and programmed by the designer. It is designed as a synchronous machine, and as a consequence it can be easily integrated on a chip and used in multimicroprocessor structures.
Bitaper star couplers with up to 100 fibre channels
- Author(s): E.G. Rawson and M.D. Bailey
- Source: Electronics Letters, Volume 15, Issue 14, p. 432 –433
- DOI: 10.1049/el:19790310
- Type: Article
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Biconically tapered fibre-optic star couplers with up to 100 fibre channels are reported which have excess insertion losses as low as −0.56 dB and normalised standard deviations of output poers as low as 4.4%
Scanning-electron-beam annealing of ion-implanted p-n junction diodes
- Author(s): R.A. McMahon ; H. Ahmed ; J.D. Speight ; R.M. Dobson
- Source: Electronics Letters, Volume 15, Issue 14, p. 433 –435
- DOI: 10.1049/el:19790311
- Type: Article
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Scanning-electron-beam annealing of ion-implanted silicon p+-n junctions over a range of beam power and exposure conditions is described. Electrical measurements have shown that electron-beam annealing can produce diode characteristics close to those of similar thermally annealed structures.
Silicon-on-insulator m.o.s.f.e.t.s fabricated on laser-annealed polysilicon on SiO2
- Author(s): A.F. Tasch ; T.C. Holloway ; K.F. Lee ; J.F. Gibbons
- Source: Electronics Letters, Volume 15, Issue 14, p. 435 –437
- DOI: 10.1049/el:19790312
- Type: Article
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N-channel-enhancement and light-depletion-mode m.o.s.f.e.t.s have been fabricated on laser-annealed 0.5 μm polysilicon films, deposited on 1 μm of SiO2 grown on single-crystal silicon substrates. Threshold voltages of 0.35–0.45 V and −0.5 – −0.7 V and surface mobilities of 170 cm2/Vs and 215 cm2/Vs were obtained on the enhancement and depletion devices, respectively. These results compare favourably with values realised in silicon-on-sapphire (s.o.s.) and bulk N-m.o.s. devices. In addition, the measured source-drain leakage currents match the best reported values for s.o.s. devices.
S.A.W. convolver using secondary electrons
- Author(s): A.A. Dobrovolsky ; V.V. Lemanov ; G.A. Smolensky ; A.B. Sherman
- Source: Electronics Letters, Volume 15, Issue 14, p. 437 –438
- DOI: 10.1049/el:19790313
- Type: Article
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Nonlinear interaction of oppositely-directed s.a.w. with secondary electrons was investigated. It was shown that the bilinear factor of this system is about 40 dB higher than one in the best known coupled semiconductor-piezoelectric structure.
Alternative approach to the design of switched-capacitor filters
- Author(s): B.G. Pain
- Source: Electronics Letters, Volume 15, Issue 14, p. 438 –439
- DOI: 10.1049/el:19790314
- Type: Article
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An alternative switched-capacitor filter design is shown to be possible using an economic form of c.c.d. A simple example of a biquadratic digital-filter section is included to illustrate the point. This leads to comment on the relationship between switched-capacitor filters, the N-path filter and the digital filter.
Light-induced effects in GaAs f.e.t.s
- Author(s): J. Graffeuil ; P. Rossel ; H. Martinot
- Source: Electronics Letters, Volume 15, Issue 14, p. 439 –441
- DOI: 10.1049/el:19790315
- Type: Article
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It is shown theoretically and experimentally that the variations of the d.c. and dynamic properties in a GaAs f.e.t. when a light beam strikes the transistor's gate can be accounted for by an appropriate change in the gate-junction equivalent built-in voltage. A simple relationship connects this change with the variations of the light intensity.
New stripe-geometry laser with simplified fabrication process
- Author(s): M.-C. Amann
- Source: Electronics Letters, Volume 15, Issue 14, p. 441 –442
- DOI: 10.1049/el:19790316
- Type: Article
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A new type of GaAs-GaAlAs stripe-geometry laser with an appreciably simplified fabrication process is described. Owing to the excellent lateral current confinement of this structure, low threshold current densities are achieved even for very narrow stripe widths. In addition, the built-in passive wave-guiding stabilises the fundamental horizontal transverse mode, thereby avoiding nonlinearities in the light output against current characteristic. For 3μm wide and 175 μm long lasers, threshold currents of 30–35 mA are achieved and stable transverse and longitudinal monomode emission has been observed up to more than 5 mW light power output.
Single-mode propagation in 2-mode region of optical fibre by using mode filter
- Author(s): Yukata Katsuyama
- Source: Electronics Letters, Volume 15, Issue 14, p. 442 –444
- DOI: 10.1049/el:19790317
- Type: Article
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The effect of a mode filter using fibre bend has been clearly shown experimentally. The mode filter effectively removes the LP11-mode, and has a negligibly small effect on the attenuation of the LP01-mode. The single-mode propagation was attained at the V-value of 2.8 by using the filter.
Erratum: Analogue optical transmission of 26 t.v. channels
- Author(s): C. Baack ; G. Elze ; G. Grosskopf ; F. Kraus ; W. Krick ; L. Küller
- Source: Electronics Letters, Volume 15, Issue 14, page: 444 –444
- DOI: 10.1049/el:19790318
- Type: Article
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