Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 14, Issue 16, 3 August 1978
Volumes & issues:
-
Volume 59 (2023)
-
Volume 58 (2022)
-
Volume 57 (2021)
-
Volume 56 (2020)
-
Volume 55 (2019)
-
Volume 54 (2018)
-
Volume 53 (2017)
-
Volume 52 (2016)
-
Volume 51 (2015)
-
Volume 50 (2014)
-
Volume 49 (2013)
-
Volume 48 (2012)
-
Volume 47 (2011)
-
Volume 46 (2010)
-
Volume 45 (2009)
-
Volume 44 (2008)
-
Volume 43 (2007)
-
Volume 42 (2006)
-
Volume 41 (2005)
-
Volume 40 (2004)
-
Volume 39 (2003)
-
Volume 38 (2002)
-
Volume 37 (2001)
-
Volume 36 (2000)
-
Volume 35 (1999)
-
Volume 34 (1998)
-
Volume 33 (1997)
-
Volume 32 (1996)
-
Volume 31 (1995)
-
Volume 30 (1994)
-
Volume 29 (1993)
-
Volume 28 (1992)
-
Volume 27 (1991)
-
Volume 26 (1990)
-
Volume 25 (1989)
-
Volume 24 (1988)
-
Volume 23 (1987)
-
Volume 22 (1986)
-
Volume 21 (1985)
-
Volume 20 (1984)
-
Volume 19 (1983)
-
Volume 18 (1982)
-
Volume 17 (1981)
-
Volume 16 (1980)
-
Volume 15 (1979)
-
Volume 14 (1978)
-
Volume 13 (1977)
-
Volume 12 (1976)
-
Volume 11 (1975)
-
Volume 10 (1974)
-
Volume 9 (1973)
-
Volume 8 (1972)
-
Volume 7 (1971)
-
Volume 6 (1970)
-
Volume 5 (1969)
-
Volume 4 (1968)
-
Volume 3 (1967)
-
Volume 2 (1966)
-
Volume 1 (1965)
Volume 14, Issue 16
3 August 1978
Parameters of a spherical random antenna array
- Author(s): T.A. Dzekov and R.S. Berkowitz
- Source: Electronics Letters, Volume 14, Issue 16, p. 495 –496
- DOI: 10.1049/el:19780332
- Type: Article
- + Show details - Hide details
-
p.
495
–496
(2)
The shape of the beam of a spherical random antenna array is discussed and the main parameters, such as bandwidth, beamwidth and hyperfocal distance are determined.
Gateless synchronous counters with D flip-flops
- Author(s): A.R. Vaquero and J. Aguilo
- Source: Electronics Letters, Volume 14, Issue 16, p. 496 –498
- DOI: 10.1049/el:19780333
- Type: Article
- + Show details - Hide details
-
p.
496
–498
(3)
A new approach to the state assignment problem for the synthesis of sequential switching circuits is applied to solve completely the synthesis problem of gateless counters. The necessary and sufficient condition that assures that the counter may be synthesised without gates is found. A method is developed to determine a priori if a given state table corresponds to a circuit that may be synthesised without gates.
Computer store enhancement by interchange
- Author(s): D.J. Wheeler
- Source: Electronics Letters, Volume 14, Issue 16, p. 498 –499
- DOI: 10.1049/el:19780334
- Type: Article
- + Show details - Hide details
-
p.
498
–499
(2)
A new way of using random-access stores of differing speeds in a computer is given. It is effective when the fast and slow stores are of comparable size
InGaAsP/InP d.h. l.e.d.s for fibre-optical communications
- Author(s): Itsuo Umebu ; Osamu Hasegawa ; Kenzo Akita
- Source: Electronics Letters, Volume 14, Issue 16, p. 499 –500
- DOI: 10.1049/el:19780335
- Type: Article
- + Show details - Hide details
-
p.
499
–500
(2)
InGaAsP l.e.d.s emitting at 1.24 μm are fabricated. Their characteristics at 100 mA are as follows: output power coupled into the fibre of 77 μW, a spectral halfwidth of 0.1 μm and a cutoff frequency of 70 MHz. The cutoff frequencies are proportional to the square root of the bias current. The recombination coefficient is estimated to be 5 × 10−10cm3/s
New structure of enhancement-mode GaAs microwave m.o.s.f.e.t.
- Author(s): T. Mimura ; K. Odani ; N. Yokoyama ; M. Fukuta
- Source: Electronics Letters, Volume 14, Issue 16, p. 500 –502
- DOI: 10.1049/el:19780336
- Type: Article
- + Show details - Hide details
-
p.
500
–502
(3)
This letter proposes a new feasible device structure of an enhancement-mode GaAs deep-depletion m.o.s.f.e.t. as an attractive alternative to the junction-gate f.e.t.s and describes its microwave properties. The device has been fabricated on a high-resistance epitaxial n−-layer by simple readily available technology without requiring the sophisticated control of the channel thickness needed for the conventional junction-gate f.e.t.s. The 'normally-off nature of the device can be explained on the basis of the substrate space-charge region extending over then−-layer. The microwave performance of the device can be favourably compared with that of currently achievable junction-gate normally-off f.e.t.s. Unilateral gain drops to zero at a frequency slightly above 7 GHz.
Optoelectronic broadband switching array
- Author(s): R.I. MacDonald and E.M. Hara
- Source: Electronics Letters, Volume 14, Issue 16, p. 502 –503
- DOI: 10.1049/el:19780337
- Type: Article
- + Show details - Hide details
-
p.
502
–503
(2)
A novel optoelectronic switching array is proposed and a trial switch of the type used at the array crosspoints is characterised. Isolation in excess of 50 dB can be obtained over a frequency range from 30 Hz to 100 MHz with appropriate biasing. The use of optoelectronic crosspoint switch arrays for f.d.m.t.v. signal switching appears to be possible.
GaAs Hall-effect devices fabricated by ion-implantation technique
- Author(s): Taroh Inada ; Tatsuya Ohkubo ; Shigeki Kato ; Masahiro Kitahara ; Yozo Kanda ; Tohru Hara
- Source: Electronics Letters, Volume 14, Issue 16, p. 503 –505
- DOI: 10.1049/el:19780338
- Type: Article
- + Show details - Hide details
-
p.
503
–505
(3)
Gallium-arsenide Hall-effect devices were developed by using Se-implanted n layers. A Hall voltage of 85 mV was generated at I = 1 mA and B = 5 kgauss. The imbalance voltage appearing was below 1.4 mV at I = 1 mA and B = 0.This fabrication technique is very promising in the high throughput of GaAs Hall-device production.
Multimode rate equation description of homogeneous spectral broadening in semiconductor lasers
- Author(s): M. Danielsen and F. Mengel
- Source: Electronics Letters, Volume 14, Issue 16, p. 505 –507
- DOI: 10.1049/el:19780339
- Type: Article
- + Show details - Hide details
-
p.
505
–507
(3)
Experimental and theoretical investigations have shown that the static, dynamic, spectral and small-signal behaviour of semiconductor injection stripe lasers in a simple way can be interpreted by the wavelength-dependent multimode rate equations. Simple analytical expressions for the description of the laser are given.
Examination of grain boundaries in polycrystalline solar cells using a scanning optical microscope
- Author(s): J.N. Gannaway and T. Wilson
- Source: Electronics Letters, Volume 14, Issue 16, p. 507 –508
- DOI: 10.1049/el:19780340
- Type: Article
- + Show details - Hide details
-
p.
507
–508
(2)
A scanning optical microscope in which the object is scanned mechanically is used to produce images from polycrystalline solar cells using both the reflected-light and photoinduced current modes.
High-power 11 GHz amplifier using high-efficiency IMPATT diodes
- Author(s): W. Thorpe and P. Huish
- Source: Electronics Letters, Volume 14, Issue 16, p. 508 –509
- DOI: 10.1049/el:19780341
- Type: Article
- + Show details - Hide details
-
p.
508
–509
(2)
The feasibility of using high-efficiency IMPATT diodes in the output stage of a high-power amplifier for 11 GHz digital radio relay systems has been proved with a circuit having a gain of 6dB and an output power of 8.4 W. The circuit used is a troughline version of the ‘Rucker’ combining circuit and contains two diodes in specially designed packages. Error-rate measurements show that negligible degradation is introduced by the amplifier, which can now be seriously considered as a replacement for the travelling-wave tube amplifier.
Remarks on the time moments of composite systems
- Author(s): Goro Obinata
- Source: Electronics Letters, Volume 14, Issue 16, p. 509 –511
- DOI: 10.1049/el:19780342
- Type: Article
- + Show details - Hide details
-
p.
509
–511
(3)
The moments of a composite system are expressed in terms of the moments of the subsystems for the case when the composite system is built up from three basic connections: parallel, tandem and feedback. These expressions are useful for control-system design.
Practical low-loss lens connector for optical fibres
- Author(s): A. Nicia
- Source: Electronics Letters, Volume 14, Issue 16, p. 511 –512
- DOI: 10.1049/el:19780343
- Type: Article
- + Show details - Hide details
-
p.
511
–512
(2)
A connector is described in which two lenses make a 1-1 image of the emitting fibre end upon the receiving end. This type of connector is not sensitive to surface contamination, radial offset and separation. It contains no high-precision components and the prealignment procedure is very simple. Average losses of 1.0 dB were obtained, which can be improved to 0.65 dB if antireflection coatings are used.
A new space-time integral equation for two-dimensional transient scattering
- Author(s): B. Jecko and A. Papiernik
- Source: Electronics Letters, Volume 14, Issue 16, p. 512 –514
- DOI: 10.1049/el:19780344
- Type: Article
- + Show details - Hide details
-
p.
512
–514
(3)
In this letter a general time-domain integral equation for solving 2-dimensional scattering problems is presented. This new approach improves the integrodifferential equations commonly employed for the transient scattering of plane waves on cylindrical perfectly conducting obstacles. Moreover, this approach solves the problem of circular symmetric scatterers illuminated by transient incident waves that have the same symmetry.
Tungsten/gold gate GaAs microwave f.e.t.
- Author(s): H. Morkoc ; J. Andrews ; R. Sankaran ; J.H. Dully
- Source: Electronics Letters, Volume 14, Issue 16, p. 514 –515
- DOI: 10.1049/el:19780345
- Type: Article
- + Show details - Hide details
-
p.
514
–515
(2)
Preliminary results on the performance of a W/Au gate GaAs f.e.t. having T-type gate cross-section are reported. The Au overhang on the W gate can be used to self-align the source and the drain with respect to the gate, which can be used to achieve submicrometre gate dimensions rather easily. An f.e.t. with 0.7 μm gate length and 140 μm gate periphery exhibited a measured maximum available gain (m.a.g.) of 14 dB at 8 GHz, Experiments on the W Schottky diodes indicate that the leakage current, instead of degrading, is actually reduced by annealing at high temperature in a H2 atmosphere for 10 min.
Adaptive orthogonal projection for rapid converging interference suppression
- Author(s): W. Bühring
- Source: Electronics Letters, Volume 14, Issue 16, p. 515 –516
- DOI: 10.1049/el:19780346
- Type: Article
- + Show details - Hide details
-
p.
515
–516
(2)
A method of rapid converging adaptive array processing is described. A projection matrix is calculated from the eigenvectors of an estimated noise covariance matrix. The effectiveness of the algorithm in a strong directional interference situation is demonstrated and compared to the performance of a gradient-search algorithm.
Distributed multiplexing
- Author(s): D.N. Riches
- Source: Electronics Letters, Volume 14, Issue 16, p. 516 –518
- DOI: 10.1049/el:19780347
- Type: Article
- + Show details - Hide details
-
p.
516
–518
(3)
An approach to the multiplexing of signals from distributed sources is presented. By multiplexing the signals at their sources, the need for a central multiplexer is removed.
Parallel controller utilising a programmable-logic-array structure
- Author(s): D. Riches
- Source: Electronics Letters, Volume 14, Issue 16, p. 518 –520
- DOI: 10.1049/el:19780348
- Type: Article
- + Show details - Hide details
-
p.
518
–520
(3)
The principle behind a parallel system controller using the inherent parallelism in a programmable logic array is presented. A controller based on this method incorporates the speed of dedicated logic with the advantages of programmability.
Non-repeatered 50 km transmission experiment using low-loss optical fibres
- Author(s): T. Ito ; K. Nakagawa ; K. Aida ; K. Takemoto ; K. Suto
- Source: Electronics Letters, Volume 14, Issue 16, p. 520 –521
- DOI: 10.1049/el:19780349
- Type: Article
- + Show details - Hide details
-
p.
520
–521
(2)
An optical transmission experiment with an extremely long repeater spacing is conducted using graded-index multimode fibres, an InGaAsP/InP laser diode and a germanium avalanche photodiode A 53 3 km repeater spacing is realised by this experimental 1 27 μm wavelength
Maximum electric field in high-field domain
- Author(s): M. Shur
- Source: Electronics Letters, Volume 14, Issue 16, p. 521 –522
- DOI: 10.1049/el:19780350
- Type: Article
- + Show details - Hide details
-
p.
521
–522
(2)
A simple formula relating the domain voltage to the maximum domain field and device parameters is derived. The results are used to analyse the limitations of the parameters of GaAs and InP transferred-electron devices related to the impact ionisation within a high-field domain.
High-yield self-alignment method for submicrometre GaAs m.e.s.f.e.t.s
- Author(s): G.P. Donzelli
- Source: Electronics Letters, Volume 14, Issue 16, p. 523 –524
- DOI: 10.1049/el:19780351
- Type: Article
- + Show details - Hide details
-
p.
523
–524
(2)
A high-yield self-alignment technique for submicrometer GaAs m.e.s.f.e.t.s is described. This method allows the production of submicrometre gate lengths and source-drain spacings by means of standard contact photolithography without requiring a particularly fine geometry on the masks. A 0.5 μm long gate and a source-drain spacing of 2 μm were obtained.
16 Gbit/s multiplexer experiment
- Author(s): U. Barabas
- Source: Electronics Letters, Volume 14, Issue 16, p. 524 –525
- DOI: 10.1049/el:19780352
- Type: Article
- + Show details - Hide details
-
p.
524
–525
(2)
A multiplexer experiment was performed that provided an n.r.z.-format serial-output pulse stream of 16 Gbit/s bit rate and 2 V across a load of 50 Ω. The bit rate of the input tributaries was 1.12 Gbit/s. The multiplexer circuit essentially employed ultrabroadband hybrid tees, fast step-recovery diodes, and fast GaAs Schottky-barrier diodes.
Lensless acousto-optical convolver
- Author(s): A. Alippi ; A. Palma ; L. Palmieri ; G. Socino ; E. Verono
- Source: Electronics Letters, Volume 14, Issue 16, p. 525 –526
- DOI: 10.1049/el:19780353
- Type: Article
- + Show details - Hide details
-
p.
525
–526
(2)
A lensless acousto-optical convolver has been realised with surface acoustic waves, which relies on a technique of polarisation discrimination detection of the diffracted light. A polariser may, then, filter the light signal directly in the Fresnel field, thus allowing realisation of a strictly compact device that retains properties of easy adjustment and simplicity.
Microwave planar networks: the annular structure
- Author(s): G. D'inzeo ; F. Giannini ; R. Sorrentino ; J. Vrba
- Source: Electronics Letters, Volume 14, Issue 16, p. 526 –528
- DOI: 10.1049/el:19780354
- Type: Article
- + Show details - Hide details
-
p.
526
–528
(3)
A recent method of analysis that takes into account fringe effects is applied to 2-port annular structures. It is shown that the filtering properties of the structure can be controlled by varying the ring width and/or the position of the ports. Experiments performed on microstrips are in good agreement with the theoretical results.
Sinusoidal microbending loss of HE11-mode in step-index fibres
- Author(s): Jiann-Tsorng Horng
- Source: Electronics Letters, Volume 14, Issue 16, p. 528 –529
- DOI: 10.1049/el:19780355
- Type: Article
- + Show details - Hide details
-
p.
528
–529
(2)
Sinusoidal microbending losses of the HE11-mode in step-index fibres are compared by using a perturbation solution of electromagnetic wave scattering theory. The HE11-mode in a multi-mode step-index fibre is found to suffer much higher bending loss than that in a single-mode step-index fibre, except that in nearly perpendicular directions and in the perpendicular direction with respect to the fibre axis the HE11-mode in the single-mode step-index fibre shows some higher bending loss than that in the multimode step-index fibre.
Erratum: Semiconductor junction transceiver for fibre optic communication
- Author(s): J.J. Geddes ; P.E. Petersen ; D. Chen ; K.P. Koeneman
- Source: Electronics Letters, Volume 14, Issue 16, page: 530 –530
- DOI: 10.1049/el:19780356
- Type: Article
- + Show details - Hide details
-
p.
530
(1)
Erratum: Fibredyne systems for passive or semipassive fibre-optic sensors
- Author(s): S.A. Kingsley
- Source: Electronics Letters, Volume 14, Issue 16, page: 530 –530
- DOI: 10.1049/el:19780357
- Type: Article
- + Show details - Hide details
-
p.
530
(1)
Erratum: Microwave applicator for tubular dielectric materials
- Author(s): A. Kumar
- Source: Electronics Letters, Volume 14, Issue 16, page: 530 –530
- DOI: 10.1049/el:19780358
- Type: Article
- + Show details - Hide details
-
p.
530
(1)
Erratum: Carrier profiling of InP
- Author(s): D.L. Lile and D.A. Collins
- Source: Electronics Letters, Volume 14, Issue 16, page: 530 –530
- DOI: 10.1049/el:19780359
- Type: Article
- + Show details - Hide details
-
p.
530
(1)
Most viewed content for this Journal
Article
content/journals/el
Journal
5
Most cited content for this Journal
-
Extreme multistability in a memristive circuit
- Author(s): Bo-Cheng Bao ; Quan Xu ; Han Bao ; Mo Chen
- Type: Article
-
Absorptive frequency selective surface using parallel LC resonance
- Author(s): Qiang Chen ; Liguo Liu ; Liang Chen ; Jiajun Bai ; Yunqi Fu
- Type: Article
-
Partial spectral search-based DOA estimation method for co-prime linear arrays
- Author(s): Fenggang Sun ; Peng Lan ; Bin Gao
- Type: Article
-
Experimental verification of on-chip CMOS fractional-order capacitor emulators
- Author(s): G. Tsirimokou ; C. Psychalinos ; A.S. Elwakil ; K.N. Salama
- Type: Article
-
54 Gbit/s OOK transmission using single-mode VCSEL up to 2.2 km MMF
- Author(s): G. Stepniak ; A. Lewandowski ; J.R. Kropp ; N.N. Ledentsov ; V.A. Shchukin ; N. Ledentsov Jr. ; G. Schaefer ; M. Agustin ; J.P. Turkiewicz
- Type: Article
