Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 13, Issue 8, 14 April 1977
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Volume 13, Issue 8
14 April 1977
Compact antenna range at 35 GHz
- Author(s): A.D. Olver and G. Tong
- Source: Electronics Letters, Volume 13, Issue 8, p. 223 –224
- DOI: 10.1049/el:19770161
- Type: Article
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p.
223
–224
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The feasibility of operating a compact antenna test range at 35 GHz has been demonstrated. A compact range of simple construction has been shown to have a performance only slightly inferior to the performance at X-band. Diffracted rays from the edges of the source reflector can degrate the purity of the electric field. This has been investigated and sucessfully controlled by serrating the rim of the reflector.
Variance of simulated 1/f noise
- Author(s): A. Ambrózy
- Source: Electronics Letters, Volume 13, Issue 8, p. 224 –225
- DOI: 10.1049/el:19770162
- Type: Article
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p.
224
–225
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A recently introduced mathematical model supporting the observed high variance of variance of excess noise is extended to a process having a 1/f spectrum. The variance of variance found by simulation was even higher than that of a Gauss-Poisson square wave.
Simulation of a proposed near-field-to-far-field antenna measurement system
- Author(s): K.M. Keen
- Source: Electronics Letters, Volume 13, Issue 8, p. 225 –226
- DOI: 10.1049/el:19770163
- Type: Article
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p.
225
–226
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A new antenna-pattern measurement method for antennas with large far-field distances is proposed. The method is applicable to conventional antenna ranges with two axis mounts and with pattern recording in amplitude only, It requires only a few minor items of additional equipment. A computer simulation has been carried out and the results are presented.
Millimetre-wave s.s.b. mixer with integrated local-oscillator injection
- Author(s): B. Vowinkel and W. Reinert
- Source: Electronics Letters, Volume 13, Issue 8, p. 226 –227
- DOI: 10.1049/el:19770164
- Type: Article
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–227
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A description of a mixer mount with integrated image filter and l.o. injection filter is presented. The image filter is a high-pass filter using the cut-off properties of a circular waveguide section. The l.o. power is coupled selectively via a TE111-mode filter into the mixer waveguide. The i.f. matching transformer has been designed by a microstrip technique.
Wavelength dispersion in a single-mode fibre
- Author(s): T. Miyashita ; M. Horiguchi ; A. Kawana
- Source: Electronics Letters, Volume 13, Issue 8, p. 227 –228
- DOI: 10.1049/el:19770165
- Type: Article
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p.
227
–228
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Wavelength dispersion in a single-mode fibre has been evaluated by measuring propagation times of various-wavelength pulses transmitted through a 3.72 km-length fibre. Dispersion in a single-mode fibre is dominated by material dispersion, and is estimated to be 9.1 ps/Å dkm at 0.85 μm wavelength.
Low-frequency intensity noise in c.w. (GaAl)As d.h. lasers with stripe geometry
- Author(s): Roy Lang ; Kouichi Minemura ; Kohroh Kobayashi
- Source: Electronics Letters, Volume 13, Issue 8, p. 228 –230
- DOI: 10.1049/el:19770166
- Type: Article
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228
–230
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The excessively large low-frequency intensity noise above threshold observed in some C.W.-operated (GaAl)As d.h. lasers with stripe geometry is shown to result from spatially inhomogeneous gain saturation. Improved understanding of the noise properties yields new information concerning the formation mechanism of the nonlinear output/current curves.
Algorithm for the synthesis of state-feedback regulators by entire eigenstructure assignment
- Author(s): B. Porter and J.J. D'Azzo
- Source: Electronics Letters, Volume 13, Issue 8, p. 230 –231
- DOI: 10.1049/el:19770167
- Type: Article
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–231
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The algorithm for the computation of a basis for ker (A−λoIn, B) presented greatly facilitates the synthesis of state-feedback regulators by entire eigenstructure assignment. It is ideally suited for digital-computer implementation and can be readily dualised for use in the synthesis of full-order observers by entire eigenstructure assignment.
Charge generation in TRAPATT diodes
- Author(s): I.W. Mackintosh
- Source: Electronics Letters, Volume 13, Issue 8, p. 231 –233
- DOI: 10.1049/el:19770168
- Type: Article
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p.
231
–233
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The charge generated during an avalanche in a TRAPATT diode is shown to be proportional to the current at the instant of triggering. The constant-current frequency is shown to be an important diode parameter.
Active layers for device applications by using high-energy selenium implantation into GaAs
- Author(s): R.K. Surridge and B.J. Sealy
- Source: Electronics Letters, Volume 13, Issue 8, p. 233 –234
- DOI: 10.1049/el:19770169
- Type: Article
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p.
233
–234
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High-energy, doubly charged selenium ions have been used to produce dopant profiles suitable for GaAs devices, such as f.e.t.s. Selenium has the advantage that beams of high purity may be formed.
Automated measurement of noisy voltages with a preset confidence level
- Author(s): P.I. Somlo
- Source: Electronics Letters, Volume 13, Issue 8, p. 234 –235
- DOI: 10.1049/el:19770170
- Type: Article
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p.
234
–235
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A logical way of measuring voltages having varying amounts of noise present, under computer control, has been achieved by evaluating the running standard deviation of the mean in real time and stopping the measurements when a preset threshold has been reached.
Effect of ionised impurity scattering on the electron transit time in GaAs and InP f.e.t.s
- Author(s): G. Hill ; P.N. Robson ; A. Majerfeld ; W. Fawcett
- Source: Electronics Letters, Volume 13, Issue 8, p. 235 –236
- DOI: 10.1049/el:19770171
- Type: Article
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p.
235
–236
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The effect of ionised impurity scattering on the transient drift velocity of electrons in short-gate GaAs and InP field-effect transistors is investigated by Monte Carlo techniques.
Longitudinal field control in stripe-geometry lasers
- Author(s): M.J. Adams
- Source: Electronics Letters, Volume 13, Issue 8, p. 236 –237
- DOI: 10.1049/el:19770172
- Type: Article
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p.
236
–237
(2)
The theory of optical confinement by a gain-guiding mechanism in stripe-geometry lasers has been extended to include the effects of longitudinal inhomogeneity of the optical field and the gain coefficient. A proposal is made for utilising these effects to improve field control and efficiency in lasers with a. R.-coated facets.
New simplification criterion relating different reduction algorithms
- Author(s): B. Maione and F. Torelli
- Source: Electronics Letters, Volume 13, Issue 8, p. 238 –239
- DOI: 10.1049/el:19770173
- Type: Article
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p.
238
–239
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A transfer-function simplification criterion is introduced which relates explicitly many known reduction algorithms. Based on this criterion, a systematic approach is proposed for obtaining many reduced models, previously derived only by quite different methods.
Calculation of external circuit current of thin-film semiconductor structures
- Author(s): A.A. Barybin
- Source: Electronics Letters, Volume 13, Issue 8, p. 239 –240
- DOI: 10.1049/el:19770174
- Type: Article
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p.
239
–240
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The expression for the external circuit current for thin-film semiconductor structures is derived. A connection of the external current with the normal modes in the semiconductor film is ascertained.
Correlation between stimulated scattering processes and laser-induced damage in crystalline quartz
- Author(s): C. Yu ; M.F. Haw ; H. Hsu
- Source: Electronics Letters, Volume 13, Issue 8, p. 240 –243
- DOI: 10.1049/el:19770175
- Type: Article
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p.
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–243
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The results of a systematic series of experiments to uncover possible correlation between laser-induced s.b.s. phonons and damage in quartz are presented. Such correlation is confirmed and the various thresholds established. The anomalous transmission factor under phonon generation is found to decay exponentially as predicted with increasing incident laser power. The l.f. s.b.s. phonon is also demonstrated to be a sensitive probe for precatastrophic damage.
Electric-field-induced anisotropy of thin semiconductor films
- Author(s): A.A. Barybin
- Source: Electronics Letters, Volume 13, Issue 8, p. 243 –244
- DOI: 10.1049/el:19770176
- Type: Article
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p.
243
–244
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Assuming isotropic electrical properties for a semiconductor material, a mathematical derivation of a differential mobility tensor for carriers in thin semiconductor films with a tangential high electric field is represented.
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