Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 11, Issue 5, 6 March 1975
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Volume 11, Issue 5
6 March 1975
Parallel and pipeline computation of fast unitary transforms
- Author(s): B.J. Fino and V.R. Algazi
- Source: Electronics Letters, Volume 11, Issue 5, p. 93 –94
- DOI: 10.1049/el:19750071
- Type: Article
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p.
93
–94
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The letter discusses the parallel and pipeline organisation of fast-unitary-transform algorithms such as the fast Fourier transform, and points out the efficiency of a combined parallel-pipeline processor of a transform such as the Haar transform, in which 2n−1 hardware ‘butterflies’ generate a transform of order 2n every computation cycle.
Ideal 2-port convertor networks using operational amplifiers
- Author(s): Jacqueline Glover
- Source: Electronics Letters, Volume 11, Issue 5, p. 94 –96
- DOI: 10.1049/el:19750072
- Type: Article
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p.
94
–96
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Ideal 2-port convertor network realisations are given in tabulated form using one basic network topology. The voltage and current ratio of the convertors can be real, imaginary or complex.
Velocity/field characteristic of n-type indium phosphide at 110 and 330 K
- Author(s): R.L. Tebbenham and D. Walsh
- Source: Electronics Letters, Volume 11, Issue 5, p. 96 –97
- DOI: 10.1049/el:19750073
- Type: Article
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96
–97
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The technique of microwave conductivity measurement was employed to investigate the velocity/field characteristic of epitaxially grown indium phosphide. Cooling the material from 330 to 110 K produced a 10% decrease in threshold field and a 70% increase in peak velocity. Measurements of variation of power absorption with epitaxial layer thickness are also reported.
Experimental results on fast surface states and 1/f noise in m.o.s. transistors
- Author(s): G. Broux ; R. van Overstraeten ; G. Declerck
- Source: Electronics Letters, Volume 11, Issue 5, p. 97 –98
- DOI: 10.1049/el:19750074
- Type: Article
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97
–98
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Experimental results for 1/f noise in m.o.s. transistors with very low surface state densities are presented. A direct relation between noise and surface state density is found, extending previously published data.
Gradient identification of multivariable discrete systems
- Author(s): A.J. Udink Ten Cate
- Source: Electronics Letters, Volume 11, Issue 5, p. 98 –99
- DOI: 10.1049/el:19750075
- Type: Article
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98
–99
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A gradient parameter-estimation technique is presented for multivariable discrete linear systems and a class of nonlinear systems. The second method of Lyapunov is used to prove the asymptotic stability of the identification procedure.
Optimal broadband cylindrical antenna with one and two lumped capacitive loadings
- Author(s): B.D. Popović ; M.B. Dragović ; A.R. Djordjević
- Source: Electronics Letters, Volume 11, Issue 5, p. 99 –100
- DOI: 10.1049/el:19750076
- Type: Article
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99
–100
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Results for the optimisation of the admittance broadband properties of cylindrical antennas with one and two lumped capacitive loadings are presented. The theoretical results for the antenna admittance are shown to be in very good agreement with the experimental results.
Run-length coding method for black-and-white facsimile with a ternary code as an intermediate step
- Author(s): U. Rothgordt
- Source: Electronics Letters, Volume 11, Issue 5, p. 101 –102
- DOI: 10.1049/el:19750077
- Type: Article
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101
–102
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A code is presented that consists of codewords of variable length. This allows a good adaptation to the different run-length statistics of various kinds of documents: printed matter, drawings, weather maps etc. Compared with other run-length codes, the new code yields, in most cases, a better compression ratio.
Charge-limited domains in gallium-arsenide avalanche diodes
- Author(s): B. Culshaw ; P.A. Blakey ; R.A. Giblin
- Source: Electronics Letters, Volume 11, Issue 5, p. 102 –104
- DOI: 10.1049/el:19750078
- Type: Article
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–104
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An analysis of the high-efficiency mode of operation of gallium-arsenide avalanche diodes is presented. The concept of a charge-limited domain is introduced, and it is shown that the occurrence of this domain effectively increases the velocity of the travelling charges. This velocity increase occurs at a point roughly midway through the transit time, and causes an increase in the induced particle current at that time. This effect, coupled with the effects of depletion-layer-width modulation, has an important bearing on the observed high efficiency of nonpunchedthrough ‘clump’ and ‘hi-lo’ gallium-arsenide structures.
Medium-power GaAs field-effect transistors
- Author(s): I. Drukier ; R.L. Camisa ; S.T. Jolly ; H.C. Huang ; S.Y. Narayan
- Source: Electronics Letters, Volume 11, Issue 5, p. 104 –105
- DOI: 10.1049/el:19750079
- Type: Article
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–105
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Results on medium-power GaAs m.e.s.f.e.t.s. are described. Output powers as high as 300 mW at 9 GHz at 1 dB gain compression with a linear gain of 5.2 dB and drain efficiency of 30% have been obtained with single-cell m.e.s.f.e.t.s. At 4 GHz, a power output of 665 mW at 1 dB gain compression, a linear gain of 8 dB and a drain efficiency of 44.5% were realised with a 3-cell m.e.s.f.e.t. Two-tone intermodulation characteristics at 4 GHz are also described. A major innovation has been the use of a high-resistivity chromium-doped epitaxial GaAs buffer layer to isolate the device active region from the bulk-grown substrate.
B.J.T. frequency doubling with sinusoidal output
- Author(s): R.W.J. Barker
- Source: Electronics Letters, Volume 11, Issue 5, p. 106 –107
- DOI: 10.1049/el:19750080
- Type: Article
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p.
106
–107
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A frequency-doubling technique is described that can provide a low-distortion sinusoidal output. The circuit consists only of bipolar-junction-transistor (b.j.t.) arrays, and is hence readily fabricated by s.i.c. technology. Results are given, and the criteria for a low-distortion output discussed.
High-speed m sequence generation: a further note
- Author(s): J.R. Ball ; A.H. Spittle ; H.T. Liu
- Source: Electronics Letters, Volume 11, Issue 5, p. 107 –108
- DOI: 10.1049/el:19750081
- Type: Article
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p.
107
–108
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A method of generating maximal-length sequences by employing delay lines in place of shift-register elements is described. Speed of operation is limited only by the rise and fall times of the modulo-2 adder employed.
Band-elimination filter employing surface-acoustic-wave resonators
- Author(s): Y. Koyamada ; F. Ishihara ; S. Yoshikawa
- Source: Electronics Letters, Volume 11, Issue 5, p. 108 –109
- DOI: 10.1049/el:19750082
- Type: Article
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p.
108
–109
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A surface-acoustic-wave (s.a.w.) band-elimination filter has been developed employing s.a.w. resonators composed of interdigital transducers with a large number of electrodes, exhibiting more than 80 dB stopband rejection with a passband attenuation of less than 1 dB.
Fermat-transform implementation by a minicomputer
- Author(s): P. Melhuish
- Source: Electronics Letters, Volume 11, Issue 5, p. 109 –111
- DOI: 10.1049/el:19750083
- Type: Article
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p.
109
–111
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The letter outlines the results of computing the Fermat transform on a minicomputer. The disadvantages of implementing the transform on a small-word-length machine are discussed, and the possible filter characteristics that can be obtained are shown.
Extension of applicability of Popov's steady-state absolute-stability frequency criterion of nonlinear systems
- Author(s): GH. Cartianu and FL. Pilat
- Source: Electronics Letters, Volume 11, Issue 5, p. 111 –113
- DOI: 10.1049/el:19750084
- Type: Article
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p.
111
–113
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Popov's steady-state absolute-stability frequency criterion is extended in its applications to nonlinear systems.
Single-bit crosscorrelation function of single-bit bandlimited Gaussian waveform and two simultaneous reflections corrupted by noise
- Author(s): J.E. Howard
- Source: Electronics Letters, Volume 11, Issue 5, p. 113 –114
- DOI: 10.1049/el:19750085
- Type: Article
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p.
113
–114
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The derivation of the single-bit crosscorrelation function of a single-bit bandlimited Gaussian waveform and two reflections corrupted by wideband Gaussian noise is given. It is seen that single-bit waveforms should not be used in single-bit crosscorrelation detectors when low extraneous noise levels and double simultaneous reflections can be expected.
Tracking sensitivity: an alternative algorithm for linear nonreciprocal circuits
- Author(s): P.R. Bryant
- Source: Electronics Letters, Volume 11, Issue 5, p. 114 –116
- DOI: 10.1049/el:19750086
- Type: Article
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p.
114
–116
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A previous algorithm by Leung and Spence for computing component tracking sensitivity is occasionally incapable of application. An alternative algorithm is presented that is always applicable and which is believed to be computationally more attractive than Leung and Spence's for circuits containing of the order of 20 or fewer nodes. The similarity between these techniques and some earlier work by Branin for computing the steady-state a.c. analysis of a circuit is also pointed out.
Investigation of intermodulation in acoustic-surface-wave filter
- Author(s): G. Coussot
- Source: Electronics Letters, Volume 11, Issue 5, p. 116 –117
- DOI: 10.1049/el:19750087
- Type: Article
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p.
116
–117
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Experimental measurements of the intermodulation of two signals in an acoustic-surface-wave filter are reported. Different cases are presented giving the inband and outband intermodulations for various input power levels from 0 to −15 dBm at intermediate frequencies near 36 MHz.
Effect of difference in odd-and even-mode wavelengths on a parallel-coupled bandpass filter
- Author(s): D. Kajfez and S. Govind
- Source: Electronics Letters, Volume 11, Issue 5, p. 117 –118
- DOI: 10.1049/el:19750088
- Type: Article
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p.
117
–118
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The difference in odd- and even-mode wavelengths on a parallel-coupled bandpass filter leads to an asymmetric filter response. This asymmetry may be corrected by defining an equivalent dielectric constant, by means of which the lengths of the filter sections are to be computed.
Semi-insulating properties of Fe-doped InP
- Author(s): Osamu Mizuno and Hisao Watanabe
- Source: Electronics Letters, Volume 11, Issue 5, p. 118 –119
- DOI: 10.1049/el:19750089
- Type: Article
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p.
118
–119
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Semi-insulating InP having a room-temperature resistivity of greater than 107 Ωcm was prepared by Fe doping. The current/voltage characteristic of the material changed from ohmic to V2 dependent at about 104 V/cm. Temperature dependence of the resistivity gave an activation energy of 0.66 eV. The Hall effect was negative, and the observed electron concentration was about 109 cm−3.
Programmable acoustic-surface-wave oscillator
- Author(s): P. Hartemann
- Source: Electronics Letters, Volume 11, Issue 5, p. 119 –120
- DOI: 10.1049/el:19750090
- Type: Article
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p.
119
–120
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A programmable acoustic-surface-wave oscillator composed of a filter bank, an amplifier and diode switches is described. The input transducer and the ten output transducers of the filter bank are deposited on a quartz substrate; the direction of the launched acoustic beam being a function of frequency. The device may oscillate at ten different frequencies in a range of 9 MHz (121–130 MHz)
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