Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 11, Issue 3, 6 February 1975
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Volume 11, Issue 3
6 February 1975
Improved method of anodic oxidation of GaAs
- Author(s): H. Hasegawa ; K.E. Forward ; H. Hartnagel
- Source: Electronics Letters, Volume 11, Issue 3, p. 53 –54
- DOI: 10.1049/el:19750041
- Type: Article
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A new and better electrolyte for anodic oxidation of GaAs is described. It is an aqueous solution of tartaric or citric acid mixed with glycol and can produce, in an extremely stable manner, native oxide films with remarkably improved dielectric properties.
Investigation of parasitic oscillations in IMPATT-diode oscillators by a simple locus chart
- Author(s): J.J. Goedbloed
- Source: Electronics Letters, Volume 11, Issue 3, p. 54 –56
- DOI: 10.1049/el:19750042
- Type: Article
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Using a simplified theory of parasitic oscillations in IMPATT-diode oscillators, a locus chart is constructed that facilitates the study of parasitic oscillations of the degenerate type. Results of experiments on a high-Q factor coaxial/waveguide circuit (Kurokawa circuit) are explained by this locus chart.
Multilevel aperiodic Huffman sequences
- Author(s): P.S. Moharir
- Source: Electronics Letters, Volume 11, Issue 3, p. 56 –57
- DOI: 10.1049/el:19750043
- Type: Article
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Certain sequences that have zero aperiodic autocorrelation except for zero and the maximum shifts are described. They are useful in radar pulse compression.
Ferrite bias lines for use with GaAs IMPATT diodes
- Author(s): P.W. Braddock and R.D. Hodges
- Source: Electronics Letters, Volume 11, Issue 3, p. 57 –58
- DOI: 10.1049/el:19750044
- Type: Article
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Lowpass ferrite-bead bias filters are used to suppress high-frequency bias oscillations and enhanced noise components obtained when high-efficiency GaAs IMPATT diodes (uniformly doped n-type and Read) are operated as free-running oscillators and saturated amplifiers in broadband (low Q factor) r.f. coaxial circuits with distributed-line bias arms. The impedance properties of the ferrite beads have been measured up to a frequency of 2 GHz, which has resulted in a 4-stage bias-filter prototype being realised. Also incorporated is a simple r.f. low-shunt-capacitive choke that reduces the loss on the main coaxial r.f. cavity to less than 0.2 dB over the frequency range 7–12 GHz.
Broadband lumped-element X band GaAs f.e.t. amplifier
- Author(s): R.S. Pengelly
- Source: Electronics Letters, Volume 11, Issue 3, p. 58 –60
- DOI: 10.1049/el:19750045
- Type: Article
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The design of a 2-stage broadband X band amplifier using GaAs Schottky field-effect transistors is described. The performance of the intrinsic device and the amplifier are summarised. The amplifier gives 9.5±1 dB gain over the frequency range 6.5–12 GHz. The v.s.w.r. at the input and the output does not exceed 2.5:1. Practical wideband matching networks are described that minimise overall amplifier noise figure and maintain a constant gain over the design bandwidth, while including the effects of parasitics, loss and discontinuity capacitances.
Circuit model for the GaAs m.e.s.f.e.t. valid to 12 GHz
- Author(s): G.D. Vendelin and M. Omori
- Source: Electronics Letters, Volume 11, Issue 3, p. 60 –61
- DOI: 10.1049/el:19750046
- Type: Article
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A new equivalent circuit is given for the GaAs m.e.s.f.e.t., which includes resistive loss in the feed back elements. The circuit values are given for several 1 μm-gate GaAs m.e.s.f.e.t.s. A method for fitting s12 to the measured data is described. Finally, the gain and stability factor of several GaAs m.e.s.f.e.t.s. are extrapolated to 24 GHz from the present model.
Signal/noise ratio for short integrated antennas
- Author(s): T.S.M. Maclean and P.A. Ramsdale
- Source: Electronics Letters, Volume 11, Issue 3, p. 62 –63
- DOI: 10.1049/el:19750047
- Type: Article
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Using an idealised transistor model, there is shown to be an optimum transistor positional height for maximum signal/noise ratio in an active monopole. This height depends on sky temperature, and, for the example considered, varies between zero and 0.7 of the total antenna length as this temperature increases.
Nonsaturated integrated injection logic
- Author(s): M.I. Elmasry
- Source: Electronics Letters, Volume 11, Issue 3, p. 63 –64
- DOI: 10.1049/el:19750048
- Type: Article
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Conventional integrated-injection-logic structures suffer from strong saturation of the n–p–n transistors. This increases the storage time, and hence puts a limitation on the propagation delay of the structures. A current-control technique is given to reduce this effect without changing the basic i.i.l. structure.
Sawtooth-voltage-waveform generator for extended-duration sweeps
- Author(s): B.L. Hart
- Source: Electronics Letters, Volume 11, Issue 3, p. 64 –65
- DOI: 10.1049/el:19750049
- Type: Article
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The direct-current-attenuation property of suitably connected bipolar junction transistors is exploited in a sawtooth-voltage-waveform-generator-circuit design that facilitates the maximisation of sweep duration for specified amplitude and timing-capacitor value.
New solution to a problem in Luenberger observer design
- Author(s): H.M. Power
- Source: Electronics Letters, Volume 11, Issue 3, p. 65 –67
- DOI: 10.1049/el:19750050
- Type: Article
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The matrix LA−QL=TD, which arises in the design of a Luenberger observer to control the system dx/dt=Ax+Bu, y=Dx, is solved subject to mild restrictions. T is taken as dyadic, T=−efT, Q cyclic, having no eigenvalues in common with A, and there results L = P−1(Q)[e, Qe, .., Qn−1e] SN. P(Q) and S involve the characteristic polynomial of A, and N transforms A to companion form in accordance with C=NAN−1.
Utilisation de l'effet de pointe dans l'analyse modale de certains obstacles en guide d'onde (Use of edge condition in modal analysis of some discontinuities in waveguides)
- Author(s): C. Vassallo
- Source: Electronics Letters, Volume 11, Issue 3, p. 67 –68
- DOI: 10.1049/el:19750051
- Type: Article
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The edge condition allows to find the asymptotic decrease of modal amplitudes in some discontinuity problems in waveguides. This knowledge may be used directly in modal analysis, resulting in a substantial improvement in the calculations.
Load-line analysis of i.i.l.
- Author(s): M.I. Elmasry and R.D. Midha
- Source: Electronics Letters, Volume 11, Issue 3, p. 68 –69
- DOI: 10.1049/el:19750052
- Type: Article
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A d.c. load-line analysis of i.i.l. structures is performed. Calculations are made of logic levels, noise margins and effective circuit parameters. Although the analysis is simple, it enhances the understanding of the circuit operation, and its predictions are in agreement with experiment and with more complicated analyses.
Nachweis der unbedingten Äquivalenz der Verstärkergrundschaltungen MIT Gegenkopplungsschaltungen (Complete description of the basic amplifier configurations by feedback action)
- Author(s): M. Drosg
- Source: Electronics Letters, Volume 11, Issue 3, p. 69 –71
- DOI: 10.1049/el:19750053
- Type: Article
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Es wird gezeigt, daß die drei Verstärkergrundschaltungen, die es bei Verstärkerdreipolen, z.B. Vakuumtriode, FET, Transistor, .gibt, eindeutig auf nur eine Grundschaltung zurückgeführt werden können. Die Eigenschaften der beiden anderen lassen sich exakt als Parallel–Serienbzw. Serien–Parallel-Gegenkopplung an dieser einen Grundschaltung darstellen. It is shown that only one of the three apmlifier configurations of active devices with three terminals, e.g. vacuum triode, f.e.t., bipolar transistor, is truly basic. The other two arise from the basic configuration by parallel–series feedback or series-parallel feedback, respectively.
Measurement of the effective relative permittivities of microstrip
- Author(s): B. Bianco and M. Parodi
- Source: Electronics Letters, Volume 11, Issue 3, p. 71 –72
- DOI: 10.1049/el:19750054
- Type: Article
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A new method for determining the effective relative permittivity of microstrip, even at high frequencies, is presented. Four microstrips having the same physical and geometric characteristics, but different lengths, are needed; the mismatch due to the launchers is completely overcome.
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