Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 1, Issue 2, April 1965
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Volume 2 (1966)
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Volume 1 (1965)
Volume 1, Issue 2
April 1965
Bounds on two-element-kind impedance functions
- Author(s): T.S. Huang
- Source: Electronics Letters, Volume 1, Issue 2, page: 29 –29
- DOI: 10.1049/el:19650027
- Type: Article
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29
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Four types of two-element-kind networks are considered: R, ±C; R, ±L; ±R, C; and ±R,L networks. Regions in the Zplane are found within which the impedance function Z(j∞) must lie.
Equivalent circuit and intergate capacitance of four-terminal field-effect transistors
- Author(s): R.S.C. Cobbold
- Source: Electronics Letters, Volume 1, Issue 2, p. 30 –31
- DOI: 10.1049/el:19650028
- Type: Article
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–31
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The high-frequency equivalent circuit of four-terminal field-effect transistors is examined, and it is shown that there exists an equivalent intergate capacitance whose value exhibits very abrupt changes with voltage near the drain-current cutoff point. Experimental results are shown to be in fairly good agreement with those predicted from theory.
Hollow-cathode discharge in magnetic field
- Author(s): C. Popovici and M. Somesan
- Source: Electronics Letters, Volume 1, Issue 2, p. 31 –32
- DOI: 10.1049/el:19650029
- Type: Article
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–32
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In order to study the effect of a transverse magnetic field on a hollow-cathode discharge, voltage/current measurements have been made for Ne in a cylindrical geometry and for N2 in a plane-parallel geometry at approximately 1 mmHg pressure. Current-density amplifications of more than 104 have been obtained.
Three-dimensional analysis of electron-velocity distribution in low-noise guns
- Author(s): P.A. Lindsay
- Source: Electronics Letters, Volume 1, Issue 2, p. 32 –33
- DOI: 10.1049/el:19650030
- Type: Article
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–33
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On the basis of theoretical calculations of the electron-velocity distribution in a low-noise travelling-wave-tube gun, it is suggested that suitable conditions are created by certain electrode configurations for correlation to develop between the Φ and Ψ noise parameters of the beam.
Biasing of silicon transistors
- Author(s): J.H. Simpson
- Source: Electronics Letters, Volume 1, Issue 2, p. 33 –34
- DOI: 10.1049/el:19650031
- Type: Article
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–34
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A modification of the voltage-feedback bias circuit applicable to modern silicon transistors is described, and formulas are given for the calculation of performance. For moderate power-supply potentials, variations in VCE can be held within 1.0 V for a temperature rise of 75 degC.
Elastance coefficients of varactor diodes
- Author(s): D. Hedderly
- Source: Electronics Letters, Volume 1, Issue 2, p. 34 –35
- DOI: 10.1049/el:19650032
- Type: Article
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–35
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The elastance coefficients of a diode are derived for inclusion in standard varactor theory.
Electromagnetic wave propagation on a double-layer dielectric film
- Author(s): C. Kao
- Source: Electronics Letters, Volume 1, Issue 2, p. 35 –37
- DOI: 10.1049/el:19650033
- Type: Article
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–37
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The nature of the eigenvalues characterising the electromagnetic wave propagation in a homogeneous isotropic double-layer dielectric structure of infinite extent on a perfectly conducting ground plane is discussed.
Evolutionary medium-altitude communication-satellite systems
- Author(s): D.I. Dalgleish and A.K. Jefferis
- Source: Electronics Letters, Volume 1, Issue 2, p. 37 –38
- DOI: 10.1049/el:19650034
- Type: Article
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A class of medium-attitude communication-satellite systems which may established by multiple-satellite launch techniques is described. As the initial satellites fail they are replaced by satellites in slightly different orbits; the system thus evolves into one in which all satellites follow a common earth track. Multiple-access coverage is in consequence greatly improved.
Transverse electron-beam wave excitation by photoelectric mixing of laser beams
- Author(s): J.C. Bass
- Source: Electronics Letters, Volume 1, Issue 2, p. 38 –39
- DOI: 10.1049/el:19650035
- Type: Article
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–39
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It is shown theoretically that, by photoelectric mixing of laser beams which are incident obliquely on to a photosurface, transverse electron-beam waves may be excited. It should thus be possible to construct transverse-field microwave phototubes for detecting amplitude-modulated laser signals.
Theory of lossless reciprocal transformation of a reciprocal 2-state network
- Author(s): Shojiro Kawakami
- Source: Electronics Letters, Volume 1, Issue 2, p. 39 –40
- DOI: 10.1049/el:19650036
- Type: Article
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–40
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Properties of linear reciprocal 1- or 2-port variable networks with two states have been studied. Invariants and canonical forms of these networks under lossless reciprocal transformations have been found out. Optimum synthesis of these kinds of networks with respect to a newly defined ‘figure of merit’ of a 2-state variable impedance is described.
Speech-transmission performance of p.c.m. systems
- Author(s): D.L. Richards
- Source: Electronics Letters, Volume 1, Issue 2, p. 40 –41
- DOI: 10.1049/el:19650037
- Type: Article
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–41
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A method is described for calculating a quantity representative of the transmission performance of a p.c.m. system. The value obtained depends upon (a) the number of quantised output voltage states, (b) the companding law and (c) the volume of the input speech signal relative to the overload point of the system.
D.C. differential amplifier with very high common-mode rejection
- Author(s): L.J. Herbst
- Source: Electronics Letters, Volume 1, Issue 2, p. 41 –42
- DOI: 10.1049/el:19650038
- Type: Article
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–42
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A recent instrumentation project called for a d.c. differential amplifier with very high common-mode rejection, which resulted in the circuit described.
Automatic speed/time recorder utilising the principle of the stroboscope
- Author(s): C.L. Beevers and T. Ffoulkes
- Source: Electronics Letters, Volume 1, Issue 2, p. 42 –43
- DOI: 10.1049/el:19650039
- Type: Article
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–43
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This letter contains a description of the mode of operation of an automatic rotational speed/time recorder based on the principle of the stroboscope. The device produces a record of speed against time, on punched paper tape, for a rotating electrical machine during the progress of a retardation test. The data output on the punched tape represents the time taken for the machine speed to fall by successive equal decrements.
Improved tunnel-diode pulse former
- Author(s): L.J. Herbst
- Source: Electronics Letters, Volume 1, Issue 2, page: 43 –43
- DOI: 10.1049/el:19650040
- Type: Article
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An improved design for a tunnel-diode pulse former is presented, which exploits the fast-switching capability of the tunnel diode. Pulse rates of 100 megapulses per second can be obtained consistently.
Determination of electron drift velocity in a gaseous discharge from Doppler shifts of plasma waves
- Author(s): B. Keržar and P. Weissglas
- Source: Electronics Letters, Volume 1, Issue 2, p. 43 –44
- DOI: 10.1049/el:19650041
- Type: Article
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–44
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Measurements of Doppler shifts of plamsa waves in a low-pressure mercury-vapour discharge have been made, in order to determine the electron drift velocity in the positive column. It is concluded that, within the accuracy of the expenments, there is no radial variaton of the electron drift velocity in the discharge.
Extremely high-power X band 3-port circulator
- Author(s): E. Wantuch
- Source: Electronics Letters, Volume 1, Issue 2, page: 45 –45
- DOI: 10.1049/el:19650042
- Type: Article
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A proposal is made for a 3-port circulator operating in the region of 9600 Mc/s and having a power-handling capacity of 500kW (peak) and 633W (average).
Laser oscillations at submillimetre wavelengths from pulsed gas discharges in compounds of hydrogen, carbon and nitrogen
- Author(s): L.E.S. Mathias ; A. Crocker ; M.S. Wills
- Source: Electronics Letters, Volume 1, Issue 2, p. 45 –46
- DOI: 10.1049/el:19650043
- Type: Article
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–46
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Stimulated emission at ten new wavelengths between 126 and 373μm was obtained with dimethylamine. The stronger lines were also obtained with seven related compounds and with several mixtures, notably methane and ammonia. A new spectrum (four lines between 181 and 205μm) was obtained with a mixture of deuterium and bromine cyanide. The radiation is tentatively attributed to HnCN with n >1.
Economical long-tail pair with no tail
- Author(s): P. Rhodes
- Source: Electronics Letters, Volume 1, Issue 2, p. 46 –47
- DOI: 10.1049/el:19650044
- Type: Article
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–47
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A transistor complementary-pair differential-amplifier circuit is shown, having a performance equal to a conventional long-tail-pair circuit with constant-current-emitter tail, but having the advantages of half the current consumption, economy of components and hence smaller physical size. Measured results and a circuit with values are included.
Use of screen cathodes to obtain plasma/electromagnetic-wave interaction structures with free plasma boundaries
- Author(s): K.T. Lian
- Source: Electronics Letters, Volume 1, Issue 2, page: 47 –47
- DOI: 10.1049/el:19650045
- Type: Article
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A gas-discharge structure which uses a screen cathode is described. The plasma, which is formed between two equipotential metallic surfaces, has geometrically well defined planar plasma-gas boundaries (free boundary). Electron densities greater than 1012cm−3 have been obtained.
New type of waveguide for light and infrared waves
- Author(s): A.E. Karbowiak
- Source: Electronics Letters, Volume 1, Issue 2, p. 47 –48
- DOI: 10.1049/el:19650046
- Type: Article
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–48
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A new type of optical waveguide is proposed. It consists of a thin film of transparent dielectric supporting the surface E0 wave mode. With properly chosen dimensions, attenuation of a few decibels per kilometre is theoretically achievable. A design is suggested which gives the guide the required flexibility for negotiating bends.
Double-gate thin-film transistor
- Author(s): D. Abraham and T.O. Poehler
- Source: Electronics Letters, Volume 1, Issue 2, page: 49 –49
- DOI: 10.1049/el:19650047
- Type: Article
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A thin-film transistor (t.f.t.) with opposing gate electrodes completely isolated from the source-drain circuit has demonstrated greater conductivity modulation with the signal applied between the two gates than the same t.f.t. connected with the signal applied between a gate and the source in the conventional manner. This result precludes the assumption that charge injected into the semiconductor region accounts for the modulation.
Nonlinear-capacitance devices
- Author(s): A.R. Owens and G. White
- Source: Electronics Letters, Volume 1, Issue 2, p. 49 –50
- DOI: 10.1049/el:19650048
- Type: Article
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The capacitance characteristics of normal and ‘hyperabrupt’ junction diodes are first reviewed. A discontinuity in the slope of the capacitance characteristic of the field-effect transistor is then discusscd; the variation in loss in the vicinity of the pinchoff region is found to be consistent with a qualitative theory for the effect.
Ionisation and dissociation in CF4
- Author(s): M.M. Bibby ; B.J. Toubelis ; G. Carter
- Source: Electronics Letters, Volume 1, Issue 2, p. 50 –51
- DOI: 10.1049/el:19650049
- Type: Article
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A mass-spectrometric reinvestigation of ionisation and dissociation in CF4 was undertaken to deduce the probable value of the CF3–F bond strength. From studies of the appearance potentials for both positive and negative F and CF3 ions a best value for the bond strength of 143 kcal/mole is deduced. Possible reasons for the abnormal low dielectric strength of CF4 are discussed.
Natural modes of partitioned networks in analysis and synthesis of transfer functions
- Author(s): J.J. Hupert
- Source: Electronics Letters, Volume 1, Issue 2, page: 52 –52
- DOI: 10.1049/el:19650050
- Type: Article
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The letter describes a relatively rapid computational method of finding the natural modes of four-pole networks by partitioning and using a modification of potential-analogue type of computation in application to natural modes of the parts of the network obtained by partitioning.The method described may be regarded as an extension of the bisection method applicable to symmetrical networks.It lends itself well to iterated networks, yielding accurate results also for lossy networks and physically realisable impedances of termination.
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