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Properties of graphene produced by the high pressure–high temperature growth process

Properties of graphene produced by the high pressure–high temperature growth process

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The authors report on a new method for the synthesis of graphene, a mono-layer of carbon atoms arranged in a honey comb lattice, and the assessment of the properties of obtained graphene layers using micro-Raman characterisation. Graphene was produced by a high pressure–high temperature (HPHT) growth process from the natural graphitic source material by utilising the molten Fe–Ni catalysts for dissolution of carbon. The resulting large-area graphene flakes were transferred to the silicon–silicon oxide substrates for the spectroscopic micro-Raman and scanning electron microscopy inspection. The analysis of the G peak, D, T+D and 2D bands in the Raman spectra under the 488 nm laser excitation indicate that the HPHT technique is capable of producing high-quality large-area single-layer graphene with a low defect density. The disorder-induced D peak ∼1359 cm−1 while very strong in the initial graphitic material is completely absent in the graphene layers. The proposed method may lead to a more reliable graphene synthesis and facilitate its purification and chemical doping.

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