For the first time, a distinctive approach to design and investigate double-gate Schottky Barrier MOSFET (DG SB-MOSFET) using gate engineering is reported. Three isolated gates (one Control gate and two N-gates) of different work-functions on both sides of the gate oxides have been used. In the proposed device, without the need of doping, n-type region is formed at the source/drain contact-channel interfaces by inducing electron in the ultrathin intrinsic silicon channel using appropriate work-function metal N-gates. Using N-gates, the Schottky barrier height and tunnelling barrier width have been modulated to enhance the carrier injection similar to conventional dopant segregated (DS) SB-MOSFET. Moreover, the proposed DG SB-MOSFET behaves such as a conventional DS SB-MOSFET. The proposed device is expected to be free from variability caused by random dopant fluctuations. Furthermore, it offers simplified process flow with relaxing the need of doping to form dopant segregation layer and increased immunity to device variability.

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Design and investigation of double gate Schottky barrier MOSFET using gate engineering

References

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