Optimum current-voltage characteristics of GaAs/AlAs intraband microwave devices

Chih Chin Yang; Yan Kuin Su; Ting Chang Chang

Optimum current-voltage characteristics of GaAs/AlAs intraband microwave devices

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Author(s): Chih Chin Yang ¹ ; Yan Kuin Su ² ; Ting Chang Chang ³
- Affiliations: 1: Department of Microelectronics Engineering, National Kaohsiung Marine University, Kaohsiung City, 81157, Taiwan ;
  2: Department of Electrical Engineering, National Cheng Kung University, Tainan City, 70101, Taiwan ;
  3: Department of Physics, National Sun Yat-Sen University, Kaohsiung City, 80424, Taiwan
Source: Volume 10, Issue 9, September 2015, p. 472 – 475
DOI: 10.1049/mnl.2015.0002 , Online ISSN 1750-0443

Received 04/01/2015, Accepted 07/07/2015, Revised 03/07/2015, Published 26/08/2015

In this reported work, both high peak current density and high peak-to-valley current ratio (PVCR) in AlAs/GaAs triple-barrier quantum-well intraband resonant tunnelling diodes (TBQW IRTDs) were accomplished. The valley current density (J _V) of TBQW IRTDs can be degraded as the barrier thickness reaches 4 nm thickness. This result suggests narrow barrier thickness is due to the slight band bending effect in the conduction band of i-AlAs barrier layers. The peak current density (J _P) of the TBQW IRTDs will be <2.43 KA/cm² as the i-AlAs barriers thickness of the TBQW IRTD reaches 5 nm thickness. The optimal thickness of barrier layers should be selected at 4 nm thickness to obtain the highest PVCR value (about 4270), in which the sample with barrier layers of 4 nm thickness possesses the lowest valley current density.

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Optimum current-voltage characteristics of GaAs/AlAs intraband microwave devices

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