© The Institution of Engineering and Technology
The design of a dynamic content-addressable memory (DCAM) cell using carbon nanotube (CNT) field effect transistors is explored. A four CNTFET design is presented and the functionality of a ternary DCAM cell using SPICE simulation is verified. Using an array of asymmetrically correlated tube technique, it is demonstrated how the presented design could be made functional even in the presence of metallic CNTs.
References
-
-
1)
-
2)
-
V. Derycke ,
R. Martel ,
J. Appenzeller ,
Ph. Avouris
.
Carbon nanotube inter- and intramolecular logic gates.
Nano Lett.
-
3)
-
13. Lynch, M.D., Patrick, D.L.: ‘Organizing carbon nanotubes with liquid crystals’, Nano Lett., 2002, 2, (11), pp. 1197–1201 (doi: 10.1021/nl025694j).
-
4)
-
17. Qu, L., Du, F., Dai, L.: ‘Preferential syntheses of semiconducting vertically aligned sing-walled carbon nanotubes for direct use in FETs’, Nano Lett., 2008, 8, (9), pp. 2682–2687 (doi: 10.1021/nl800967n).
-
5)
-
3. Chae, M., Lee, J.-W., Hong, S.H.: ‘A decoupled 4 T dynamic CAM suitable for high density storage’, Electron. Lett., 2011, 47, (7), pp. 434–436 (doi: 10.1049/el.2010.7283).
-
6)
-
14. Pan, Y., Duan, X., Dubrow, R.S., et al: ‘Systems and methods for nanowire growth and harvesting’, , U.S. Patent and Trademark Office, Washington, DC, 2006.
-
7)
-
16. Saito, R., Dresselhaus, G., Dresselhaus, M.: ‘Physical properties of carbon nanotubes’ (Imperial College Press, 1998).
-
8)
-
J.G. Delgado-Frias ,
J. Nyathi ,
S.B. Tatapudi
.
Decoupled dynamic ternary content addressable memories.
IEEE Trans. Circuits Syst. I
,
10 ,
2139 -
2147
-
9)
-
S. Lin ,
Y.-B. Kim ,
F. Lombardi
.
CNTFET-based design of ternary logic gates and arithmetic circuits.
IEEE Trans. Nanotechnol.
,
2 ,
217 -
225
-
10)
-
4. Nepal, K., You, K.: ‘Carbon nanotube field effect transistor based content addressable memory architectures’, Micro Nano Lett., 2012, 7, (1), pp. 20–23 (doi: 10.1049/mnl.2011.0576).
-
11)
-
9. Delgado-Frias, J.G., Yu, A., Nyathi, J.: ‘A dynamic content addressable memory using a 4-transistor cell’. Int. Workshop on Design of Mixed-Mode Integrated Circuits and Applications, Puerto Vallerta Mexico, 1999, pp. 110–113.
-
12)
-
3. Lin, S., Kim, Y.B., Lombardi, F.: ‘Design of a ternary memory cell using CNTFETs’, IEEE Trans. Nanotechnol., 2012, 11, (5), pp. 1019–1025 (doi: 10.1109/TNANO.2012.2211614).
-
13)
-
J.P. Wade ,
C.G. Sodini
.
Dynamic cross-coupled bit-line content addressable memory cell for high-density arrays.
IEEE J. Solid-State Circuits
,
1 ,
119 -
121
-
14)
-
7. Hanlon, A.G.: ‘Content-addressable and associative memory systems a survey’, IEEE Trans. Electron. Comput., 1966, EC-15, (4), pp. 509–521 (doi: 10.1109/PGEC.1966.264358).
-
15)
-
5. Lin, Y.M., Appenzeller, J., Knoch, J., Avouris, P.: ‘High performance carbon nanotube field-effect transistor with tunable polarities’, IEEE Trans. Nanotechnol., 2005, 4, pp. 481–489 (doi: 10.1109/TNANO.2005.851427).
-
16)
-
K. You ,
K. Nepal
.
Design of a ternary static memory cell using carbon nanotubes-based transistors.
IET Micro Nano Lett.
,
6 ,
381 -
385
-
17)
-
18. Lin, A., Patil, N., Wei, H., Mitra, S., Wong, H.-S.P.: ‘ACCNT – a metallic-CNT-tolerant design methodology for carbon-nanotube VLSI: concepts and experimental demonstration’, IEEE Trans. Electron Devices, 2009, 56, (12), pp. 2969–2978 (doi: 10.1109/TED.2009.2033168).
-
18)
-
15. Ren, Z., Lan, Y., Wang, Y.: ‘Aligned carbon nanotubes: physics, concepts, fabrication and devices’, NanoSci. Technol., 2013. (doi: 10.1007/978-3-642-30490-3).
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