Metallic tube-tolerant ternary dynamic content-addressable memory based on carbon nanotube transistors
- Author(s): Daniel Hellkamp 1 and Kundan Nepal 1
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View affiliations
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Affiliations:
1:
School of Engineering, University of St Thomas, St. Paul, MN 55104, USA
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Affiliations:
1:
School of Engineering, University of St Thomas, St. Paul, MN 55104, USA
- Source:
Volume 10, Issue 4,
April 2015,
p.
209 – 212
DOI: 10.1049/mnl.2014.0582 , Online ISSN 1750-0443
The design of a dynamic content-addressable memory (DCAM) cell using carbon nanotube (CNT) field effect transistors is explored. A four CNTFET design is presented and the functionality of a ternary DCAM cell using SPICE simulation is verified. Using an array of asymmetrically correlated tube technique, it is demonstrated how the presented design could be made functional even in the presence of metallic CNTs.
Inspec keywords: carbon nanotube field effect transistors; content-addressable storage; ternary logic; logic design; SPICE
Other keywords: carbon nanotube field effect transistors; dynamic content-addressable memory cell; SPICE simulation; ternary DCAM cell; metallic tube-tolerant ternary dynamic content-addressable memory; CNTFET design; metallic CNT; asymmetrically correlated tube technique
Subjects: Other field effect devices; Logic design methods; Associative storage; Fullerene, nanotube and related devices; Memory circuits; Logic and switching circuits; Digital circuit design, modelling and testing; Logic circuits
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