Highly enhanced charge injection and bulk transport in organic gap-type diodes via one-pot treatment process: experiment and simulation

Hyeok Kim; Dong-Seok Song; SeongMin Kim; Nicolas Battaglini; Philippe Lang; Gilles Horowitz; Do-Kyung Kim; In Man Kang; Jin-Hyuk Bae

Highly enhanced charge injection and bulk transport in organic gap-type diodes via one-pot treatment process: experiment and simulation

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Author(s): Hyeok Kim ¹ ; Dong-Seok Song ² ; SeongMin Kim ³ ; Nicolas Battaglini ¹ ; Philippe Lang ¹ ; Gilles Horowitz ^{1, 4} ; Do-Kyung Kim ² ; In Man Kang ² ; Jin-Hyuk Bae ²
- Affiliations: 1: ITODYS, CNRS, UMR 7086, Université Paris Diderot, 15 Rue Jean-Antoine de Baïf, F-75205 Paris Cedex 13, France;
  2: School of Electronics Engineering, Kyungpook National University, Daegu, Republic of Korea;
  3: Computational Science Group, Samsung Advanced Institute of Technology (SAIT), Gyeonggi-do, Yongin, Republic of Korea;
  4: LPICM, Ecole Polytechnique, CNRS, Palaiseau 91128, France
Source: Volume 9, Issue 12, December 2014, p. 887 – 890
DOI: 10.1049/mnl.2014.0422 , Online ISSN 1750-0443

Received 10/07/2014, Accepted 06/10/2014, Revised 05/10/2014, Published 06/11/2014

The gap-type diode is a basic component of organic field-effect transistors. In the critical voltage range above 10 V, the gap-type diode works in the same way as a sandwich-type diode adapted for organic light-emitting diodes and organic photovoltaic cells. However, the gap-type diode is rarely studied, and compact modelling is not often found in previous reports that deal with this type of an organic diode. Enhanced bulk transport is exhibited using the one-pot treatment of self-assembled monolayers (SAMs) for an SiO₂ surface and an Au contact metal in the gap-type organic diode. Charge-injection improvement via the SAM treatment on Au induces higher bulk transport. This phenomenon is analysed mainly through compact modelling.

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Highly enhanced charge injection and bulk transport in organic gap-type diodes via one-pot treatment process: experiment and simulation

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