Protuberant mounds and micro-nanoholes are prepared on the GaAs surface under Langmuir evaporation. It is demonstrated that mounds are oxidised Ga-rich droplets with minute As. Through analysis of the experimental conditions of samples forming holes and mounds, the correlation between the two phenomena is presented. It is concluded that annealing time is the key factor in controlling the size of mounds and holes and that the annealing temperature is one predominant factor in deciding the evolution direction of the structure on GaAs—forming holes or protuberant mounds. The tuning over the GaAs surface morphology will be potentially applied in the preparation of quantum dots used for optical and electronic devices.

References

1. 1)
  - 18. Zinke-Allmang, M., Feldman, L., Van Saarloos, W.: ‘Experimental study of self-similarity in the coalescence growth regime’, Phys. Rev. Lett., 1992, 68, (15), pp. 2358–2361 (doi: 10.1103/PhysRevLett.68.2358).
2. 2)
  - 2. Foxon, C., Harvey, J., Joyce, B.: ‘The evaporation of GaAs under equilibrium and non-equilibrium conditions using a modulated beam technique’, J. Phys. Chem. Solids, 1973, 34, (10), pp. 1693–1701 (doi: 10.1016/S0022-3697(73)80135-0).
3. 3)
  - 19. Lowes, T., Zinke-Allmang, M.: ‘Microscopic study of cluster formation in the Ga on GaAs (001) system’, J. Appl. Phys., 1993, 73, (10), pp. 4937–4941 (doi: 10.1063/1.353812).
4. 4)
  - 26. Zhou, Z., Zheng, C., Tang, W.-X., Jesson, D., Tersoff, J.: ‘Congruent evaporation temperature of GaAs (001) controlled by As flux’, Appl. Phys. Lett., 2010, 97, (12), pp. 121912–121913 (doi: 10.1063/1.3491552).
5. 5)
  - 5. Tersoff, J., Jesson, D., Tang, W.-X.: ‘Running droplets of gallium from evaporation of gallium arsenide’, Science, 2009, 324, (5924), pp. 236–238 (doi: 10.1126/science.1169546).
6. 6)
  - 22. Li, X., Wu, J., Wang, Z.M., et al: ‘Origin of nanohole formation by etching based on droplet epitaxy’, Nanoscale, 2014, 6, (5), pp. 2675–2681 (doi: 10.1039/c3nr06064k).
7. 7)
  - 14. Choi, W.J., Song, J., Lee, J., Kim, K., Kim, T.: ‘In As/GaAs quantum dot lasers with dots in an asymmetric InxGa1-xAs quantum well structure’, Phys. B, Condens. Matter, 2006, 376, pp. 886–889 (doi: 10.1016/j.physb.2005.12.221).
8. 8)
  - 7. Li, S., Wu, J., Wang, Z., et al: ‘Thermal etching process of microscale pits on the GaAs (001) surface’, Phys. Status Solidi – Rapid Res. Lett., 2012, 6, (1), pp. 25–27 (doi: 10.1002/pssr.201105482).
9. 9)
  - 20. Lee, J., Wang, Z.M., Strom, N., Mazur, Y.I., Salamo, G.: ‘InGaAs quantum dot molecules around self-assembled GaAs nanomound templates’, Appl. Phys. Lett., 2006, 89, (20), p. 202101 (doi: 10.1063/1.2388049).
10. 10)
  - 23. Kuroda, T., Mano, T., Ochiai, T., et al: ‘Optical transitions in quantum ring complexes’, Phys. Rev. B, 2005, 72, (20), p. 205301 (doi: 10.1103/PhysRevB.72.205301).
11. 11)
  - 25. Liang, B., Wang, Z.M., Lee, J., Sablon, K., Mazur, Y.I., Salamo, G.: ‘Low density InAs quantum dots grown on GaAs nanoholes’, Appl. Phys. Lett., 2006, 89, (4), p. 043113 (doi: 10.1063/1.2244043).
12. 12)
  - 13. Wei, C., Yuan, W., Yan, Z., Haiyan, L., Hanchao, G., Naibin, Y.A.: ‘THz InGaAs/InP double heterojunction bipolar transistor with fmax = 325 GHz and BVCBO = 10.6 V’, J. Semicond., 2013, 34, (5), p. 054006 (doi: 10.1088/1674-4926/34/5/054006).
13. 13)
  - 6. Zhou, Z., Tang, W.-X., Jesson, D., Tersoff, J.: ‘Time evolution of the Ga droplet size distribution during Langmuir evaporation of GaAs (001)’, Appl. Phys. Lett., 2010, 97, (19), p. 191914 (doi: 10.1063/1.3515925).
14. 14)
  - Z. Yuan , B.E. Kardynal , R.M. Stevenson , A.J. Shields , C.J. Lobo , K. Cooper , N.S. Beattie , D.A. Ritchie , M. Pepper . Electrically driven single-photon source. Science , 102 - 105
15. 15)
  - 21. Wang, Z.M., Liang, B., Sablon, K., Salamo, G.: ‘Nanoholes fabricated by self-assembled gallium nanodrill on GaAs (100)’, Appl. Phys. Lett., 2007, 90, (11), p. 113120 (doi: 10.1063/1.2713745).
16. 16)
  - 4. Hilner, E., Zakharov, A.A., Schulte, K., et al: ‘Ordering of the nanoscale step morphology as a mechanism for droplet self-propulsion’, Nano Lett., 2009, 9, (7), pp. 2710–2714 (doi: 10.1021/nl9011886).
17. 17)
  - 3. Goldstein, B., Szostak, D.J., Ban, V.S.: ‘Langmuir evaporation from the (100),(111A), and (111B) faces of GaAs’, Surf. Sci., 1976, 57, (2), pp. 733–740 (doi: 10.1016/0039-6028(76)90358-7).
18. 18)
  - 10. Schmidt, R., Scholz, U., Vitzethum, M., et al: ‘Fabrication of genuine single-quantum-dot light-emitting diodes’, Appl. Phys. Lett., 2006, 88, (12), p. 121115 (doi: 10.1063/1.2188057).
19. 19)
  - 17. Zhen, D., Cuiluan, W., Hongqi, J., Suping, L., Xiaoyu, M.: ‘High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold current’, J. Semicond., 2013, 34, (11), p. 114011 (doi: 10.1088/1674-4926/34/11/114011).
20. 20)
  - 15. Li, X., Wu, Y., Steel, D., et al: ‘An all-optical quantum gate in a semiconductor quantum dot’, Science, 2003, 301, (5634), pp. 809–811 (doi: 10.1126/science.1083800).
21. 21)
  - 1. Arthur, J.: ‘Vapor pressures and phase equilibria in the GaAs system’, J. Phys. Chem. Solids, 1967, 28, (11), pp. 2257–2267 (doi: 10.1016/0022-3697(67)90251-X).
22. 22)
  - 9. Eyink, K., Tomich, D., Pitz, J., Grazulis, L., Mahalingam, K., Shank, J.: ‘Self-assembly of heterojunction quantum dots’, Appl. Phys. Lett., 2006, 88, (16), p. 163113 (doi: 10.1063/1.2197930).
23. 23)
  - 24. Lee, J., Wang, Z.M., Abuwaar, Z., Strom, N., Salamo, G.: ‘Evolution between self-assembled single and double ring-like nanostructures’, Nanotechnology, 2006, 17, (15), p. 3973 (doi: 10.1088/0957-4484/17/15/061).
24. 24)
  - 12. Jie, C., Lei, C., Chunlei, K., et al: ‘A high-linearity InGaP/GaAs HBT power amplifier for IEEE 802.11 a/n’, J. Semicond., 2013, 34, (6), p. 065001 (doi: 10.1088/1674-4926/34/6/065001).
25. 25)
  - J.A. del Alamo . Nanometre-scale electronics with III-V compound semiconductors. Nature , 317 - 323
26. 26)
  - 16. Mowbray, D., Skolnick, M.: ‘New physics and devices based on self-assembled semiconductor quantum dots’, J. Phys. D, Appl. Phys., 2005, 38, (13), p. 2059 (doi: 10.1088/0022-3727/38/13/002).

Evolution of nanomicro structures on GaAs (001) surface under high temperature evaporation

References

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