access icon free Fabrication of silicon hierarchical nanopillar arrays based on nanosphere lithography

A fabrication process of silicon hierarchical nanopillar arrays (NPAs) based on the self-assembled colloid particle monolayer is presented. Using colloid particles assembled by the evaporation-induced method as masks, well-ordered silicon NPAs were fabricated by assessing the deep reactive ion etching process. After the optimisation of the cycles of etching and passivation steps, double-layer hierarchical NPAs were achieved simultaneously. Systematic analysis and experiments were conducted to investigate the transition from well-ordered silicon NPAs to silicon hierarchical NPAs. An explanation of this transition is provided based on the collapsing phenomenon discovered in the experiments.

Inspec keywords: silicon; self-assembly; nanostructured materials; nanofabrication; nanolithography; colloids; elemental semiconductors; passivation; semiconductor growth; sputter etching; masks; monolayers

Other keywords: etching cycle optimisation; nanosphere lithography; double-layer hierarchical nanopillar arrays; deep reactive ion etching; self-assembled colloid particle monolayer; silicon hierarchical nanopillar arrays; Si; passivation cycle optimisation; masks; collapsing phenomenon; evaporation-induced method

Subjects: Lithography (semiconductor technology); Surface treatment and degradation in semiconductor technology; Structure of solid clusters, nanoparticles, nanotubes and nanostructured materials; Low-dimensional structures: growth, structure and nonelectronic properties; Elemental semiconductors; Self-assembly in nanofabrication; Surface treatment (semiconductor technology); Nanolithography; Nanometre-scale semiconductor fabrication technology

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http://iet.metastore.ingenta.com/content/journals/10.1049/mnl.2014.0260
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