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Microcantilever with integrated light-emitting Schottky barrier avalanche breakdown diodes

Microcantilever with integrated light-emitting Schottky barrier avalanche breakdown diodes

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The design, fabrication and characterisation of a microcantilever having two back-to-back light-emitting Pt–Si Schottky diodes fabricated near the cantilever free end is reported. Visible light is emitted from the Schottky barrier junctions under reverse bias. The diodes breakdown at a voltage of 100 V and during breakdown the diodes emit light with a peak wavelength near 710 nm. This approach for integrating a light-emitting Schottky diode onto a microcantilever could be used to introduce light into scanning probe or sensing measurements.

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    10. 10)
    11. 11)
      • B.G. Streetman , S. Banerjee . (2000) Solid state electronic devices.
    12. 12)
    13. 13)
    14. 14)
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