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UV laser-assisted multiple evanescent waves lithography for near-field nanopatterning

UV laser-assisted multiple evanescent waves lithography for near-field nanopatterning

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© The Institution of Engineering and Technology
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A single exposure multiple evanescent waves interference lithography approach for patterning of nanoscale two-dimensional (2D) features is described and illustrated theoretically and experimentally in this Letter. Sub-70 nm (≤0.19λ) full-width at half-maximum (FWHM) 2D features, with a pitch size smaller than λ/2, are fabricated by exposing conventional positive tone UV photoresist to the interference between four counter-propagating evanescent waves, which are generated by total internal reflection of polarised incident beams. The effects of polarisation and exposure duration are also investigated.

Inspec keywords: nanopatterning; light polarisation; light interference; photoresists; refractive index

Other keywords: polarisation effects; nanoscale two-dimensional features; pitch size; polarised incident beams; near-field nanopatterning; four counter-propagating evanescent waves; refractive index; conventional positive tone UV photoresist; UV laser-assisted multiple evanescent waves lithography; total internal reflection; multiple evanescent waves interference lithography approach

Subjects: Edge and boundary effects; optical reflection and refraction; Optical polarization; Optical interference and speckle; General integrated circuit fabrication techniques

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