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access icon openaccess Reliability evaluation of MMC system considering working conditions

This is an open access article published by the IET under the Creative Commons Attribution-NonCommercial-NoDerivs License (http://creativecommons.org/licenses/by-nc-nd/3.0/)
Received 04/09/2018, Accepted 19/09/2018, Published 24/10/2018

The reliability is a key issue of the high-voltage high-power modular multilevel converter (MMC) system due to the usage of fragile insulated gate bipolar transistor (IGBT) modules. In this study, it is proposed that the reliability of the MMC system can be modelled and calculated considering practical working conditions. Firstly, based on the MMC power level, the power loss and the junction temperature are analysed. Then considering the aging process of IGBT, the failure rate is calculated with temperature coefficient. Finally, the MMC system failure rate and its relationships with some key parameters are found.

Inspec keywords: ageing; insulated gate bipolar transistors; voltage-source convertors; reliability; HVDC power convertors; failure analysis

Other keywords: temperature coefficient; MMC system failure rate; MMC power level; high-voltage high-power modular multilevel converter system; working conditions; fragile insulated gate bipolar transistor modules; power loss; reliability evaluation; junction temperature; IGBT aging process

Subjects: Bipolar transistors; Power convertors and power supplies to apparatus; Reliability; Insulated gate field effect transistors

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