Experiment on Ka-band amplifiers degraded and damaged by electromagnetic waves

Zhan-Liang Wang; Jinjin Luo; Xu Xiong; Yu-Bin Gong; Yan-Yu Wei; Zhao-Yun Duan; Huarong Gong

Experiment on Ka-band amplifiers degraded and damaged by electromagnetic waves

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Author(s): Zhan-Liang Wang^{1, 2} ; Jinjin Luo¹ ; Xu Xiong² ; Yu-Bin Gong¹ ; Yan-Yu Wei¹ ; Zhao-Yun Duan¹ ; Huarong Gong¹
- Affiliations: 1: School of Electronics Science and Engineering, University Electronic Science and Technology of China (UESTC) , No. 4, Section 2, North Jianshe Road, Chengdu , People's Republic of China ;
  2: State Key Laboratory of Complex Electromagnetic Environment Effects of Electronics and Information System , Luoyang 471003 , People's Republic of China
Source: Volume 2018, Issue 14, 2018, p. 704 – 708
DOI: 10.1049/joe.2018.0098 , Online ISSN 2051-3305

This is an open access article published by the IET under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0/)

Received 07/02/2018, Accepted 24/04/2018, Revised 19/04/2018, Published 02/05/2018

Research on amplifiers injected by high-power microwave is important and lays foundation for reinforce technology. This study reports an experiment on Ka-band amplifiers injected and damaged by electromagnetic waves. The continuous wave and the pulse wave are injected into the amplifiers which are based on HMMC5040 chips. The injected power level increases until the amplifiers are damaged. The results are recorded and analysed. The results show that: (i) the uncharged amplifiers need more injected power to be damaged compared with the charged amplifiers. (ii) To degrade or damage the amplifiers, the pulse wave need more power. (iii) The first node of the HMMC5040 chip is damaged in the experiment, so this is the key part for anti-radiation design.

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Experiment on Ka-band amplifiers degraded and damaged by electromagnetic waves

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