Highly sensitive 10 Gb/s PAM-4 optical receiver circuit for three-dimensional optoelectronic integration
- Author(s): Nemanja Vokić 1 ; Dinka Milovančev 1 ; Bernhard Goll 1 ; Horst Zimmermann 1
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View affiliations
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Affiliations:
1:
Institute of Electrodynamics, Microwave and Circuit Engineering, Vienna University of Technology , Gusshausstrasse 25/E354, Vienna 1040 , Austria
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Affiliations:
1:
Institute of Electrodynamics, Microwave and Circuit Engineering, Vienna University of Technology , Gusshausstrasse 25/E354, Vienna 1040 , Austria
- Source:
Volume 2016, Issue 10,
October
2016,
p.
363 – 366
DOI: 10.1049/joe.2016.0242 , Online ISSN 2051-3305
This study presents a 0.35 µm silicon germanium bipolar complementary metal-oxide-semiconductor 10 Gb/s receiver circuit optimised for photonic–electronic three-dimensional integration. Measurements were conducted on a test-chip with a voltage-input signal, which was converted to a current via a series resistor. On the basis of measurement results and using the expected value of the photodetector responsivity of 1 A/W, the PAM-4 circuit consumes 145 mW, sensitivity is −21.8 dBm at 10 Gb/s, and at a bit error rate = 10−9.
Inspec keywords: CMOS integrated circuits; integrated optoelectronics; resistors; integrated optics; error statistics; optical receivers; photodetectors; silicon alloys; germanium alloys; pulse amplitude modulation
Other keywords: voltage-input signal; power 145 mW; bit error rate; test-chip; three-dimensional optoelectronic integration; bipolar complementary metal-oxide-semiconductor receiver circuit; highly sensitive PAM-4 optical receiver circuit; SiGe; bit rate 10 Gbit/s; series resistor; photonic-electronic three-dimensional integration; photodetector responsivity
Subjects: Integrated optoelectronics; Optical communication devices, equipment and systems; Photodetectors; Integrated optics; Resistors; CMOS integrated circuits; Modulation and coding methods; Optical communication equipment; Integrated optics
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