Highly sensitive 10 Gb/s PAM-4 optical receiver circuit for three-dimensional optoelectronic integration
- Author(s): Nemanja Vokić 1 ; Dinka Milovančev 1 ; Bernhard Goll 1 ; Horst Zimmermann 1
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View affiliations
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Affiliations:
1:
Institute of Electrodynamics, Microwave and Circuit Engineering, Vienna University of Technology , Gusshausstrasse 25/E354, Vienna 1040 , Austria
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Affiliations:
1:
Institute of Electrodynamics, Microwave and Circuit Engineering, Vienna University of Technology , Gusshausstrasse 25/E354, Vienna 1040 , Austria
- Source:
Volume 2016, Issue 10,
October
2016,
p.
363 – 366
DOI: 10.1049/joe.2016.0242 , Online ISSN 2051-3305
This study presents a 0.35 µm silicon germanium bipolar complementary metal-oxide-semiconductor 10 Gb/s receiver circuit optimised for photonic–electronic three-dimensional integration. Measurements were conducted on a test-chip with a voltage-input signal, which was converted to a current via a series resistor. On the basis of measurement results and using the expected value of the photodetector responsivity of 1 A/W, the PAM-4 circuit consumes 145 mW, sensitivity is −21.8 dBm at 10 Gb/s, and at a bit error rate = 10−9.
Inspec keywords: CMOS integrated circuits; integrated optoelectronics; resistors; integrated optics; error statistics; optical receivers; photodetectors; silicon alloys; germanium alloys; pulse amplitude modulation
Other keywords: voltage-input signal; power 145 mW; bit error rate; test-chip; three-dimensional optoelectronic integration; bipolar complementary metal-oxide-semiconductor receiver circuit; highly sensitive PAM-4 optical receiver circuit; SiGe; bit rate 10 Gbit/s; series resistor; photonic-electronic three-dimensional integration; photodetector responsivity
Subjects: Integrated optoelectronics; Optical communication devices, equipment and systems; Photodetectors; Integrated optics; Resistors; CMOS integrated circuits; Modulation and coding methods; Optical communication equipment; Integrated optics
References
-
-
1)
-
11. Quadir, N.A., Townsend, P.D., Ossieur, P.: ‘An inductorless linear optical receiver for 20 Gbaud/s (40 Gb/s) PAM-4 modulation using 28 nm CMOS’. IEEE Int. Symp. on Circuits and Systems (ISCAS), Melbourne, Australia, June 2014, pp. 2473–2476, doi: 10.1109/ISCAS.2014.6865674.
-
-
2)
-
5. Atef, M., Swoboda, R., Zimmermann, H.: ‘Optical receiver with large-area photodiode for multilevel modulation’, Opt. Quantum Electron., 2009, 41, (2), pp. 131–135 (doi: 10.1007/s11082-009-9332-z).
-
-
3)
-
6. Saeedi, S., Menezo, S., Pares, G., et al: ‘A 25 Gb/s 3D-integrated CMOS/silicon-photonic receiver for low-power high-sensitivity optical communication’, IEEE/OSA J. Lightwave Technol., 2016, 34, (12), pp. 2924–2933 (doi: 10.1109/JLT.2015.2494060).
-
-
4)
-
3. Sedighi, B., Scheytt, J.C.: ‘Low-power SiGe BiCMOS transimpedance amplifier for 25 GBaud optical links’, IEEE Trans. Circuits Syst. II, Express Briefs, 2012, 59, (8), pp. 461–465 (doi: 10.1109/TCSII.2012.2204118).
-
-
5)
-
1. Li, C., Palermo, S.: ‘A low-power 26-GHz transformer-based regulated cascode SiGe BiCMOS transimpedance amplifier’, IEEE J. Solid-State Circuits, 2013, 48, (5), pp. 1264–1275 (doi: 10.1109/JSSC.2013.2245059).
-
-
6)
-
14. Vokic, N., Brandl, P., Schneider-Hornstein, K., et al: ‘10 Gb/s switchable binary/PAM-4 receiver and ring modulator driver for 3-D optoelectronic integration’, IEEE J. Sel. Top. Quantum Electron., 2016, 22, (6) (doi: 10.1109/JSTQE.2016.2564644).
-
-
7)
-
7. Temporiti, E., Minoia, G., Repossi, M., et al: ‘A 3D-integrated 25 Gbps silicon photonics receiver in PIC25G and 65 nm CMOS technologies’. 40th European Solid State Circuits Conf. (ESSCIRC), Venezia Lido, Italy, September 2014, pp. 131–134, doi: 10.1109/ESSCIRC.2014.6942039.
-
-
8)
-
10. Yu, K., Li, C., Huang, T.-C., et al: ‘56 Gb/s PAM-4 optical receiver front-end in an advanced FinFET process’. IEEE 58th Int. Midwest Symp. on Circuits and Systems (MWSCAS), Fort Collins, CO, USA, August 2015, pp. 1–4, doi: 10.1109/MWSCAS.2015.7282209.
-
-
9)
-
4. Proakis, J.G.: ‘Digital communications’ (McGraw-Hill, New York, NY, USA, 1995, 3rd edn.).
-
-
10)
-
13. Atef, M., Swoboda, R., Zimmermann, H.: ‘An integrated optical receiver for 2.5 Gbit/s using 4-PAM signaling’. Int. Conf. on Microelectronics (ICM), Cairo, Egypt, December 2010, pp. 76–79, doi: 10.1109/ICM.2010.5696210.
-
-
11)
-
12. Moeneclaey, B., Kanakis, G., Verbrugghe, J., et al: ‘A 64 Gb/s PAM-4 linear optical receiver’. OSA Optical Fiber Communications Conf. and Exhibition (OFC), Los Angeles, CA, USA, March 2015, pp. 1–3, doi: 10.1364/OFC.2015.M3C.5.
-
-
12)
-
8. Settaluri, K.T., Lin, S., Moazeni, S., et al: ‘Demonstration of an optical chip-to-chip link in a 3D integrated electronic-photonic platform’. 41st European Solid-State Circuits Conf. (ESSCIRC), Graz, Austria, September 2015, pp. 156–159, doi: 10.1109/ESSCIRC.2015.7313852.
-
-
13)
-
1. Säckinger, E.: ‘Broadband circuits for optical fiber communication’ (John Wiley & Sons, Hoboken, NJ, USA, 2005, 1st edn.).
-
-
14)
-
9. Polzer, A., Gaberl, W., Swoboda, R., et al: ‘A 10 Gb/s transimpedance amplifier for hybrid integration of a Ge PIN waveguide photodiode’. SPIE 7719, Silicon Photonics and Photonic Integrated Circuits II, 77191N, 2010, doi: 10.1117/12.854312.
-
-
1)
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