RT Journal Article
A1 Nemat H. El-Hassan
A1 Nandha Thulasiraman Kumar
A1 Haider Abbas F. Almurib

PB iet
T1 Modelling of wire resistance effect in PCM-based nanocrossbar memory
JN The Journal of Engineering
VO 2016
IS 10
SP 357
OP 362
AB At nanoscale grain boundaries and surface scattering effects lead to an increase of connecting wires electrical resistivity with decreasing wire dimensions. This increase of resistivity leads to significant power loss across connecting wires in nanocrossbars. In this study, the resistance of connecting wire as a function of material properties and feature size is calculated. Then the effect of the connecting wires resistance in phase change memory (PCM) performance in PCM-based passive nanocrossbar was evaluated. The performance metrics tested are: programmed resistance levels, programming duration, and energy consumption. Based on the simulation results, it was found that the power consumed in connecting wires decreases the power supplied to PCM cells. This reduction in power results in higher programmed low resistive state (R ON). The effect of connecting wire resistance on PCM performance is studied as a function of the wire size, cell position on the nanocrossbar, and nanocrossbar size. Simulation results showed that the programmed R ON is inversely proportional to feature size. Moreover, it increases up to almost 40%, with decreasing feature size to 40 nm. Moreover, programmed R ON increases proportionally with increasing nanocrossbar size. Moreover, R OFF/R ON ratio drops almost 90% of targeted ratio at 1 kbit nanocrossbars. Furthermore, cells closer to supply sources are the least affected by wire resistance, while cells furthest from supply are the most affected. Finally, at the end of this study two methods are suggested to resolve the programmed R ON reliability issue caused by energy drop across connecting wires.
K1 material properties
K1 PCM-based passive nanocrossbar
K1 energy drop
K1 feature size
K1 programming duration
K1 wire resistance effect modelling
K1 connecting wire resistance effect
K1 phase change memory
K1 cell position
K1 energy consumption
K1 nanoscale grain boundaries
K1 nanocrossbar size
K1 surface scattering effects
K1 PCM cells
K1 nanocrossbars
K1 programmed reliability issue
K1 power loss
K1 PCM-based nanocrossbar memory
K1 high-programmed low-resistive state
K1 programmed resistance levels
K1 connecting wire electrical resistivity
K1 wire size function
DO https://doi.org/10.1049/joe.2016.0212
UL https://digital-library.theiet.org/;jsessionid=44gd51mt33riq.x-iet-live-01content/journals/10.1049/joe.2016.0212
LA English
SN
YR 2016
OL EN