Performance analysis of single-electron transistor at room-temperature for periodic symmetric functions operation
- Author(s): Mostafa Miralaie 1 and Ali Mir 1
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View affiliations
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Affiliations:
1:
Faculty of Engineering , Lorestan University , Khoram-Abad , Iran
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Affiliations:
1:
Faculty of Engineering , Lorestan University , Khoram-Abad , Iran
- Source:
Volume 2016, Issue 10,
October
2016,
p.
352 – 356
DOI: 10.1049/joe.2016.0139 , Online ISSN 2051-3305
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This is an open access article published by the IET under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0/)
Received
14/05/2016,
Accepted
19/05/2016,
Published
16/06/2016
For the first time, the authors have investigated the analysis of the room-temperature operation of single-electron transistor (SET) for periodic symmetric functions (PSFs). They demonstrate that in SETs due to the Pauli exclusion principle the distance between current peaks against bias voltage in coulomb oscillations will be asymmetric. Also, because the separated energy levels have unequal tunnel-barrier resistance, different tunnelling current rates are obtained for each level. So, the unequal peak-to-valley current ratio (PVCR) will be observed in the coulomb oscillations, and therefore the operation of room-temperature of silicon SET-based PSFs is impossible.
Inspec keywords: tunnelling; semiconductor device models; single electron transistors
Other keywords: coulomb oscillations; peak-to-valley current; bias voltage; tunnel barrier resistance; temperature 293 K to 298 K; periodic symmetric functions operation; tunnelling current rates; single electron transistor; Pauli exclusion principle
Subjects: Quantum interference devices; Semiconductor device modelling, equivalent circuits, design and testing; Superconducting junction devices
References
-
-
1)
-
8. Heij, C.P., Hadley, P., Mooij, J.E.: ‘Single-electron inverter’, Appl. Phys. Lett., 2001, 78, (8), pp. 1140–1142 (doi: 10.1063/1.1345822).
-
-
2)
-
7. Tucker, J.R.: ‘Complementary digital logic based on the Coulomb blockade’, J. Appl. Phys., 1992, 72, (9), pp. 4399–4413 (doi: 10.1063/1.352206).
-
-
3)
-
25. Wasshuber, C., Kosina, H., Selberherr, S.: ‘SIMON a simulator for single electron tunnel devices and circuits’, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1997, 16, (9), pp. 937–944 (doi: 10.1109/43.658562).
-
-
4)
-
24. Emberly, E.G., Kirczenow, G.: ‘Molecular spintronics: spin-dependent electron transport in molecular wires’, Chem. Phys., 2002, 281, pp. 311–324 (doi: 10.1016/S0301-0104(02)00566-9).
-
-
5)
-
5. Wasshuber, C.: ‘Computational single-electronics’ (Springer-Verlag Press, New York, 2001).
-
-
6)
-
18. Hu, C., Cotofana, S.D., Jiang, J.F.: ‘Single-electron tunneling transistor implementation of periodic symmetric functions’, IEEE Trans. Circuits Syst. II, 2004, 51, (11), pp. 593–597 (doi: 10.1109/TCSII.2004.836037).
-
-
7)
-
2. Grabert, H., Devoret, M.H.: ‘Single charge tunneling: coulomb blockade phenomena in nanostructures’, NATO ASI Series (Plenum, New York, 1992).
-
-
8)
-
17. Lee, Y., Lee, S., Hiramoto, T.: ‘Transport behaviors and mechanisms in cuspidal blockade region for silicon single-hole transistor’, Curr. Appl. Phys., 2014, 14, pp. 428–432 (doi: 10.1016/j.cap.2013.12.024).
-
-
9)
-
11. Shin, S.J., Jung, C.S., Park, B.J., et al: ‘Si-based ultra-small multi-switching single-electron transistor operating at room-temperature’, Appl. Phys. Lett., 2010, 97, (10), pp. 103101–103103 (doi: 10.1063/1.3483618).
-
-
10)
-
21. Miyaji, K., Saitoh, M., Hiramoto, T.: ‘Compact analytical model for room-temperature operating silicon single-electron transistors with discrete quantum levels’, IEEE Trans. Nanotechnol., 2006, 5, (3), pp. 167–173 (doi: 10.1109/TNANO.2006.869949).
-
-
11)
-
13. Choi, J.B.: ‘Enhanced quantum effects in room-temperature coulomb blockade devices based on ultrascaled finFET structure’. Toward Quantum FinFET, October 2013 (Lecture Notes in Nanoscale Science and Technology, 17), pp. 285–303, Chapter 12.
-
-
12)
-
19. Cotofana, S.D., Vassiliadis, S.: ‘Periodic symmetric functions, serial addition and multiplication with neural networks’, IEEE Trans. Neural Netw., 1998, 9, pp. 1118–1128 (doi: 10.1109/72.728356).
-
-
13)
-
4. Likharev, K.K.: ‘Single-electron devices and their applications’, Proc. IEEE, 1999, 87, (4), pp. 606–632 (doi: 10.1109/5.752518).
-
-
14)
-
26. Datta, S.: ‘Quantum transport: atom to transistor’ (Cambridge University Press, 2005).
-
-
15)
-
20. Hu, C., Cotofana, S.D., Jiang, J.F., et al: ‘Analog-to-digital converter based on single-electron tunneling transistors’, IEEE Trans. Very Large Scale Integr. (VLSI) Syst., 2004, 12, (11), pp. 1209–1213 (doi: 10.1109/TVLSI.2004.836313).
-
-
16)
-
10. Wang, B., Wang, K., Lu, W., et al: ‘Effects of discrete energy levels on single-electron tunneling in coupled metal particles’, Appl. Phys. Lett., 2003, 82, (21), pp. 3767–3769 (doi: 10.1063/1.1579121).
-
-
17)
-
16. Lee, S., Lee, Y., Song, E.B., et al: ‘The characteristic of elongated Coulomb-blockade regions in a Si quantum-dot device coupled via asymmetric tunnel barriers’, J. Appl. Phys., 2013, 114, p. 164513 (doi: 10.1063/1.4827177).
-
-
18)
-
12. Shin, S.J., Lee, J.J., Kang, H.J., et al: ‘Room-temperature charge stability modulated by quantum effects in a nanoscale silicon Island’, Nano Lett., 2011, 11, (4), pp. 1591–1597 (doi: 10.1021/nl1044692).
-
-
19)
-
6. Durrani, Z.A.: ‘Single-electron devices and circuits in silicon’ (Imperial College Press, 2010).
-
-
20)
-
3. Ferry, D.K., Goodnick, S.M.: ‘Transport in nanostructures’ (Cambridge University Press, Cambridge, England, 1997).
-
-
21)
-
15. Lee, S., Lee, Y., Song, E.B., et al: ‘Gate-tunable selective operation of single electron/hole transistor modes in a silicon single quantum dot at room temperature’, Appl. Phys. Lett., 2013, 102, p. 083504 (doi: 10.1063/1.4793564).
-
-
22)
-
22. Dan, S.S., Mahapatra, S.: ‘Impact of energy quantization on the performance of current-biased SET circuits’, IEEE Trans. Electron Devices, 2009, 56, (8), pp. 1562–1566 (doi: 10.1109/TED.2009.2023954).
-
-
23)
-
14. Lee, S., Lee, Y., Song, E.B., et al: ‘Observation of single electron transport via multiple quantum states of a silicon quantum dot at room temperature’, Nano Lett.., 2014, 14, pp. 71–77 (doi: 10.1021/nl403204k).
-
-
24)
-
23. Zwolak, M., Di Ventra, M.: ‘DNA spintronics’, Appl. Phys. Lett., 2002, 8, (5), pp. 925–927 (doi: 10.1063/1.1496504).
-
-
25)
-
1. Berman, D., Brodsky, M.G., Chan, H.B., et al: ‘Single-electron transistor as a charge sensor for semiconductor applications’, Sci. Technol. B, 1997, 15, (6), pp. 2844–2847 (doi: 10.1116/1.589741).
-
-
26)
-
9. Graf, H., Vancea, J., Hoffmann, H.: ‘Single-electron tunneling at room temperature in cobalt nanoparticles’, Appl. Phys. Lett., 2002, 80, (7), pp. 1264–1266 (doi: 10.1063/1.1450251).
-
-
1)
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