This is an open access article published by the IET under the Creative Commons Attribution-NonCommercial-NoDerivs License (http://creativecommons.org/licenses/by-nc-nd/3.0/)
The authors have investigated the impact of nanowire geometry on the carrier transport in axial indium gallium nitride and gallium nitride (InGaN/GaN) nanowire light-emitting diodes (LEDs). The results reveal that hole transport depends critically on the nanowire geometry. With identical material parameters, the carrier transport process can be varied with different nanowire geometry designs, which lead to different overall device performance. This study offers important insight into the design and epitaxial growth of high-performance nanowire LEDs.
References
-
-
1)
-
11. Zhang, S., Li, Y., Fathololoumi, S., et al: ‘On the efficiency droop of top-down etched InGaN/GaN nanorod light emitting diodes under optical pumping’, AIP Adv., 2013, 3, (8), p. 082103 (doi: 10.1063/1.4817834).
-
2)
-
9. Fiorentini, V., Bernardini, F., Ambacher, O.: ‘Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures’, Appl. Phys. Lett., 2002, 80, (7), pp. 1204–1206 (doi: 10.1063/1.1448668).
-
3)
-
4. Nguyen, H.P.T., Cui, K., Zhang, S., et al: ‘Controlling electron overflow in phosphor-free InGaN/GaN nanowire white light-emitting diodes’, Nano Lett., 2012, 12, (3), pp. 1317–1323 (doi: 10.1021/nl203860b).
-
4)
-
3. Lin, G.-B., Meyaard, D., Cho, J., et al: ‘Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency’, Appl. Phys. Lett., 2012, 100, (16), p. 161106 (doi: 10.1063/1.4704366).
-
5)
-
6. Djavid, M., Nguyen, H.P.T., Zhang, S., et al: ‘Tunnel injection InGaN/GaN dot-in-a-wire white-light-emitting diodes’, Semicond. Sci. Technol., 2014, 29, (8), p. 085009 (doi: 10.1088/0268-1242/29/8/085009).
-
6)
-
8. Kim, H.-M., Cho, Y.-H., Lee, H., et al: ‘High-brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays’, Nano Lett., 2004, 4, (6), pp. 1059–1062 (doi: 10.1021/nl049615a).
-
7)
-
2. Meyaard, D.S., Lin, G.-B., Cho, J., et al: ‘Identifying the cause of the efficiency droop in GaInN light-emitting diodes by correlating the onset of high injection with the onset of the efficiency droop’, Appl. Phys. Lett., 2013, 102, (25), p. 251114 (doi: 10.1063/1.4811558).
-
8)
-
5. Nguyen, H.P.T., Zhang, S., Cui, K., et al: ‘p-type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111)’, Nano Lett., 2011, 11, (5), pp. 1919–1924 (doi: 10.1021/nl104536x).
-
9)
-
10. Guo, W., Zhang, M., Bhattacharya, P., et al: ‘Auger recombination in III-nitride nanowires and its effect on nanowire light-emitting diode characteristics’, Nano Lett., 2011, 11, (4), pp. 1434–1438 (doi: 10.1021/nl103649d).
-
10)
-
7. Galopin, E., Largeau, L., Patriarche, G., et al: ‘Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy’, Nanotechnology, 2011, 22, (24), p. 245606 (doi: 10.1088/0957-4484/22/24/245606).
-
11)
-
1. Meyaard, D.S., Lin, G.-B., Shan, Q., et al: ‘Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes’, Appl. Phys. Lett., 2011, 99, (25), p. 251115 (doi: 10.1063/1.3671395).
http://iet.metastore.ingenta.com/content/journals/10.1049/joe.2014.0349
Related content
content/journals/10.1049/joe.2014.0349
pub_keyword,iet_inspecKeyword,pub_concept
6
6