access icon openaccess Impact of nanowire geometry on the carrier transport in GaN/InGaN axial nanowire light-emitting diodes

The authors have investigated the impact of nanowire geometry on the carrier transport in axial indium gallium nitride and gallium nitride (InGaN/GaN) nanowire light-emitting diodes (LEDs). The results reveal that hole transport depends critically on the nanowire geometry. With identical material parameters, the carrier transport process can be varied with different nanowire geometry designs, which lead to different overall device performance. This study offers important insight into the design and epitaxial growth of high-performance nanowire LEDs.

Inspec keywords: gallium compounds; III-V semiconductors; wide band gap semiconductors; nanowires; indium compounds; epitaxial growth; light emitting diodes

Other keywords: design; epitaxial growth; nanowire geometry; GaN-InGaN; carrier transport; hole transport; axial nanowire light-emitting diodes

Subjects: Light emitting diodes

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http://iet.metastore.ingenta.com/content/journals/10.1049/joe.2014.0349
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