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Analysis and circuit model of a multilayer semiconductor slow-wave microstrip line

Analysis and circuit model of a multilayer semiconductor slow-wave microstrip line

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An analytical single-layer reduction quasi-static formulation to accurately compute all the line parameters of metal insulator semiconductor (MIS) and Schottky contact multilayer slow-wave microstrip lines is presented. It is valid for a wide range of parameters and its validity is compared with the full-wave spectral domain analysis technique. We also obtain a circuit model, which is able to accurately explain the experimental results, including dispersion at the lower end of the frequency range, for both the MIS and Schottky contact microstrip lines. Useful data to design passive components based on these lines are also presented.

Inspec keywords: Schottky barriers; MIS structures; spectral-domain analysis; microstrip lines

Other keywords: metal insulator semiconductor; passive component; full-wave spectral domain analysis technique; analytical single-layer reduction quasistatic formulation; Schottky contact multilayer microstrip lines; slow-wave microstrip lines; MIS

Subjects: Mathematical analysis; Metal-insulator-semiconductor structures; Semiconductor-metal interfaces; Waveguides and microwave transmission lines

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