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Noise characteristics of n-channel deep-depletion mode MOS transistors

Noise characteristics of n-channel deep-depletion mode MOS transistors

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The potential of deep-depletion MOS transistors for a low-noise, analogue signal-processing application is investigated in this paper. These are predicted to have a favourable noise performance, because a buried depletion layer in this transistor structure can be induced between its conduction channel and the SiO2–Si interface noise mechanisms, which dominate a surface-channel device. Measurements for n-channel depletion-mode MOS transistors formed on p-type <100> orientation silicon substrates are presented. Under certain bias conditions these devices exhibit a significant reduction in the low-frequency noise performance over conventional, surface-channel MOS structures. A BiCMOS cascode buffer circuit is proposed, which yields a favourable noise performance for infra-red, focal-plane signal-processing applications.

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