Study of electroluminescence in porous silicon for sensing applications
Study of electroluminescence in porous silicon for sensing applications
- Author(s): A. Tsargorodskaya ; A.V. Nabok ; A.K. Ray
- DOI: 10.1049/ip-cds:20030640
For access to this article, please select a purchase option:
Buy article PDF
Buy Knowledge Pack
IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.
Thank you
Your recommendation has been sent to your librarian.
- Author(s): A. Tsargorodskaya 1 ; A.V. Nabok 1 ; A.K. Ray 1
-
-
View affiliations
-
Affiliations:
1: Nanotechnology Research Laboratories, School of Engineering, Sheffield Hallam University, Sheffield, UK
-
Affiliations:
1: Nanotechnology Research Laboratories, School of Engineering, Sheffield Hallam University, Sheffield, UK
- Source:
Volume 150, Issue 4,
August 2003,
p.
355 – 360
DOI: 10.1049/ip-cds:20030640 , Print ISSN 1350-2409, Online ISSN 1359-7000
Electroluminescence (EL) of porous silicon (PS) samples was studied at anodic polarisation using neutral electrolyte contact. SEM and AFM morphology study of PS revealed its complex structure comprising features with micrometre and tens of nanometre dimensions. The observed features of EL, including its degradation during anodisation, were discussed in terms of a phenomenological model of a chemically modified silicon surface. The adsorption of polyelectrolytes polyallylamine (PAA) and polysterylsulphonate (PSS) demonstrated sufficient improvement of EL stability. The effect of adsorption of protein bovine serum albumin (BSA) on EL quenching was studied.
Inspec keywords: scanning electron microscopy; atomic force microscopy; quenching (thermal); elemental semiconductors; electroluminescence; electric sensing devices; porous semiconductors; silicon
Other keywords:
Subjects: Electrical properties of elemental semiconductors (thin films, low-dimensional and nanoscale structures); Luminescent materials; Electroluminescence (condensed matter); Elemental semiconductors; Sensing devices and transducers
References
-
-
1)
- V. Lehmann , H. Föll . Formation mechanism and properties of electrochemically etched trenches in n-type silicon. J. Electrochem. Soc. , 653 - 659
-
2)
- O. Bisi , S. Ossicini , L. Pavesi . Porous silicon: a quantum sponge structure for silicon based optoelectronics. Surf. Sci. Rep. , 1 - 126
-
3)
- T. Osaka . Electrochemical formation and microstructure in thin films for high functional device. Elecrochim. Acta , 3015 - 3022
-
4)
- A.D. Yoffe . Low-dimensional systems: Quantum size effect and electronic properties of semiconductor microcrystallites (zero-dimensional systems) and some quasi-two-dimensional systems. Adv. Phys. , 173 - 266
-
5)
- N.F. Starodub , L.L. Fedorenko , V.M. Starodub , S.P. Dikij , S.V. Svechnikov . Use of the silicon crystals photoluminescence to control immunocomplex formation. Sens. Actuators B, Chem. , 44 - 47
-
6)
- K.-P.S. Dancil , D.P. Greiner , M.J. Sailor . A porous silicon optical biosensor: detection of reversible binding of IgG to protein A-modified surface. J. Am. Chem. Soc. , 7925 - 7930
-
7)
- V.M. Starodub , L.L. Fedorenko , N.F. Starodub . Optical immune sensors for the monitoring protein substances in the air. Sens. Actuators B, Chem. , 40 - 47
-
8)
- V.M. Starodub , L.L. Fedorenko , A.P. Sisetskiy , N.F. Starodub . Control of myoglobin level in a solution by an immune sensor based on the photoluminescence of porous silicon. Sens. Actuators B, Chem. , 409 - 414
-
9)
- H. Lüth , M. Trust , A. Steffen , P. Kordos , M. Schöning . Biochemical sensors with structured and porous silicon capacitors. Mater. Sci. Eng. B, Solid-State Mater. Adv. Technol. , 104 - 108
-
10)
- G.C. John , V.A. Singh . Porous silicon: theoretical studies. Phys. Rep. , 93 - 151
-
11)
- R.K. Reddy , A. Chadha , D.E. Bhattacharya . Porous silicon based potentiometric triglyceride biosensor. Biosens. Bioelectron. , 313 - 317
-
12)
- W. Theiss . Optical properties of porous silicon. Surf. Sci. Rep. , 91 - 192
-
13)
- P.A. Snow , E.K. Squire , P.S.J. Russell , L.T. Canham . Vapor sensing using the optical properties of porous silicon Bragg mirrors. J. Appl. Phys. , 1781 - 1784
-
14)
- O.K. Andersen , E. Veje . Experimental study of energy-band structure of porous silicon. Phys. Rev. B , 15643 - 15651
-
15)
- R. Herino , G. Bomchil , K. Barla , C. Bertrand , J.L. Ginoux . Porosity and pore size distributions of porous silicon layers. J. Electrochem. Soc. , 1994 - 2000
-
16)
- E. Savir , J. Jedrzejewski , A. Many , Y. Goldstein , S.Z. Weisz , M. Gomez , L.F. Fonseca , O. Resto . Relation between electroluminescence and photoluminescence in porous silicon. Mater. Sci. Eng B., Solid-State Mater. Adv. Technol. , 138 - 141
-
17)
- V.S.-Y. Lin , K. Motesharei , K.-P.S. Dancil , M.J. Sailor , M.R. Ghadiri . A porous silicon-based optical interferometric biosensor. Science , 840 - 843
-
18)
- D.N. Goryachev , G. Polisski , O.M. Sreseli . Carrier transport and injection into porous silicon under its electroluminescence in electrolytes. Fiz. Tekh. Poluprovodn. , 227 - 233
-
19)
- A. Bsiesy , J.C. Vial . Voltage-tunable photo- and electroluminescence of porous silicon. J. Lumin. , 310 - 319
-
20)
- R. Boukherroub , D.D.M. Wayner , D.J. Lockwood , L.T. Canham . Passivated luminescent porous silicon. J. Electrochem. Soc , 9 , 91 - 97
-
21)
- H. Arwin . Ellipsometry on thin organic layers of biological interest: characterisation and applications. Thin Solid Films , 48 - 56
-
1)
Related content
