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Computer simulation of gallium arsenide field-effect transistors using Monte-Carlo methods

Computer simulation of gallium arsenide field-effect transistors using Monte-Carlo methods

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© The Institution of Electrical Engineers
Published

A gallium arsenide planar field-effect transistor (f.e.t.) structure is simulated using a particle-mesh computer model. The model incorporates two dimensions in configuration space and three dimensions in k-space; with a full description of the material scattering cross-section which is implemented using Monte-Carlo techniques. The f.e.t. static characteristic has been calculated together with the lumped equivalent-circuit paramters. A comparison is made between devices with and without substrate. Detailed information about electrostatic potential and valley population profiles is presented for the first time. Cole-Cole plots of complex output impedance are used in determining device frequency response.

Inspec keywords: Monte Carlo methods; Schottky gate field effect transistors; digital simulation; semiconductor device models; equivalent circuits; electronic engineering computing

Other keywords: field effect transistors; GaAs FET; MESFET; Monte Carlo methods; frequency response; complex output impedance; valley population profiles; electrostatic potential; static characteristic; lumped equivalent circuit parameters; Cole Cole plots; particle mesh computer model

Subjects: Semiconductor device modelling, equivalent circuits, design and testing; Electronic engineering computing; Other field effect devices

References

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