access icon free Junction temperature estimation of IGBT module via a bond wires lift-off independent parameter V gE-np

© The Institution of Engineering and Technology
Received 03/03/2017, Accepted 15/09/2017, Revised 14/08/2017, Published 19/09/2017

An electrical method for junction temperature estimation of insulated-gate bipolar transistors (IGBTs) is presented in this study. Owing to the parasitic inductance between bond wire and main emitter terminal L E. The temperature-dependent falling collector current during turn-off transition would cause a negative voltage drop in the gate-main emitter voltage waveform v gE. Therefore, this negative voltage drop V gE-np is proportional to the junction temperature. A double-pulse test circuit is developed to verify the accuracy and feasibility of the proposed method. The impacts of collector–emitter voltage V ce, collector current I c and bond-wires cut-off are also be discussed theoretically and experimentally. The experimental results show that the proposed V gE-np has a linear relationship with junction temperature as theoretical analysis and it is a bond-wires cut-off independent parameter in some special test point, which offers an effective way to estimate junction temperature without package destruction. The advantages of the proposed method include good linearity, bond-wires failure immunity and adequate sensitivity with junction temperature.

Inspec keywords: insulated gate bipolar transistors

Other keywords: insulated-gate bipolar transistors; parasitic inductance; temperature-dependent falling collector current; negative voltage drop; bond wire lift-off independent parameter; IGBT module; collector-emitter voltage; junction temperature estimation; turn-off transition; main emitter terminal; electrical method; double-pulse test circuit; bond-wire cut-off; bond-wire failure immunity; gate-main emitter voltage waveform

Subjects: Bipolar transistors; Insulated gate field effect transistors

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