access icon free Novel high step-up dual switches converter with reduced power device voltage stress for distributed generation system

© The Institution of Engineering and Technology
Received 28/02/2017, Accepted 15/07/2017, Revised 07/06/2017, Published 17/07/2017

This study introduces a new dual switches converter with a high voltage gain and reduced power device voltage stress. Using a three-winding coupled inductor and voltage multiplier, the proposed converter achieves a high step-up voltage gain without a large duty cycle. However, unlike other converters with coupled inductor, the power device voltage stress in the proposed converter is dramatically reduced. The two clamped diodes not only alleviate the voltage spike across the metal–oxide–semiconductor field-effect transistor (MOSFET), but also reduce the diode reverse recovery issue. The efficiency can be improved as circuit allows the use of low on-resistance MOSFETs and Schottoky diodes in applications where this might not have been possible with conventional topologies. The basic operational principle and relevant theoretical analysis are presented in this study. Finally, practical results from a laboratory prototype are presented to verify the performance of the proposed converter.

Inspec keywords: switching convertors; MOSFET; power supply quality; Schottky diodes; field effect transistor switches; voltage multipliers; distributed power generation

Other keywords: high step-up dual switches converter; three-winding coupled inductor; metal oxide semiconductor field effect transistor; Schottoky diodes; diode reverse recovery issue reduction; MOSFET; distributed generation system; clamped diodes; voltage spike; voltage multiplier; reduced power device voltage stress

Subjects: Relays and switches; Insulated gate field effect transistors; Power convertors and power supplies to apparatus; Distributed power generation

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