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An efficiency comparison between a boost converter implemented with silicon (Si) devices and the same converter implemented in the other three cases, that is, employing two combinations of silicon carbide (SiC) devices and a mixture of Si and SiC elements is presented. The converter has been designed for high-voltage low-power applications required by light-emitting diode (LED) lighting. The comparison is performed on an equal basis and discusses the influence on the converter efficiency of the semiconductor power devices and the passive components. The experiments are carried out in a single-stage boost converter prototype delivering a maximum output voltage of 1200 V when supplied by a 12 V battery. The measurements show that the highest efficiency is obtained when the power transistor is implemented by a normally-off junction field-effect transistor and the diode by a SiC Schottky device with a small parasitic capacitance. The implementation with the highest efficiency has been selected for supplying a light spot of 320 LEDs in series, which results in an output voltage of 956 V and an output power of 20.6 W.
References
-
-
1)
-
J. Biela ,
M. Schweizer ,
S. Waffler ,
J.W. Kolar
.
SiC versus Si-evaluation of potentials for performance improvement of inverter and DC-DC converter systems by SiC power semiconductors.
IEEE Tran. Ind. Electron.
,
7 ,
2872 -
2882
-
2)
-
A. Elasser ,
M.H. Kheraluwala ,
M. Ghezzo ,
R.L. Steigerwald ,
N.A. Evers ,
T.P. Chow
.
A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications.
IEEE Trans. Ind. Appl.
,
915 -
921
-
3)
-
32. Martínez-Salamero, L., García, G., Orellana, M., et al: ‘Analysis and design of a sliding-mode strategy for start-up control and voltage regulation in a buck converter’, IET Power Electron., 2013, 6, (1), pp. 52–59 (doi: 10.1049/iet-pel.2011.0494).
-
4)
-
21. Wrzecionko, B., Bortis, D., Biela, J., Kolar, J.W.: ‘Novel AC-coupled gate driver for ultrafast switching of normally off SiC JFETs’, IEEE Trans. Power Electron., 2012, 27, (7), pp. 3452–3463 (doi: 10.1109/TPEL.2011.2182209).
-
5)
-
22. Sarnago, H., Lucia, O., Mediano, A., Burdio, J.M.: ‘High-efficiency parallel quasi-resonant current source inverter featuring Sic metal-oxide semiconductor field-effect transistors for induction heating systems with coupled inductors’, IET Power Electron., 2013, 6, (1), pp. 183–191 (doi: 10.1049/iet-pel.2012.0537).
-
6)
-
5. Salah, T.B., Khachroumi, S., Morel, H.: ‘Silicon–carbide junction field effect transistor built-in diode: an experimentally verified electrical model’, IET Power Electron., 2012, 5, (8), pp. 1389–1396 (doi: 10.1049/iet-pel.2010.0337).
-
7)
-
6. Peftitsis, D., Tolstoy, G., Antonopoulos, A., et al: ‘High-power modular multilevel converters with SiC JFETs’, IEEE Trans. Power Electron., 2012, 27, (9), pp. 28–36 (doi: 10.1109/TPEL.2011.2155671).
-
8)
-
3. Shillington, R., Gaynor, P., Harrison, M., et al: ‘Silicon carbide JFET reverse conduction characteristics and use in power converters’, IET Power Electron., 2012, 5, (8), pp. 1282–1290 (doi: 10.1049/iet-pel.2011.0404).
-
9)
-
34. Erickson, R.W., Maksimovik, D.: ‘Fundamentals of power electronics’ (New York, Kluwer Academic Publishers, 2001).
-
10)
-
35. Hui, Z., Tolbert, L.M.: ‘Efficiency impact of silicon carbide power electronics for modern wind turbine full scale frequency converter’, IEEE Trans. Ind. Electron., 2011, 58, (1), pp. 21–28 (doi: 10.1109/TIE.2010.2048292).
-
11)
-
38. Laimer, G., Kolar, J.W.: ‘Accurate measurement of the switching losses of ultra-high switching speed coolmos power transistor/sic diode combination employed in unity power factor Pwm rectifier systems’. PCIM, . (ed.), 2002.
-
12)
-
27. López-Santos, O., Martínez-Salamero, L., García, G., Valderrama-Blavi, H., Mercuri, D.O.: ‘Efficiency analysis of a sliding-mode controlled quadratic boost converter’, IET Power Electron., 2013, 6, (2), pp. 364–373 (doi: 10.1049/iet-pel.2012.0417).
-
13)
-
25. Chun-An, C., Hung-Liang, C., Tsung-Yuan, C., Chen-Wei, K.: ‘Single-stage high-power-factor low-frequency square-wave-driven high-intensity-discharge lamp ballast’, IET Power Electron., 2013, 6, (4), pp. 672–682 (doi: 10.1049/iet-pel.2012.0086).
-
14)
-
27. Leon-Masich, A., Valderrama-Blavi, H., Bosque-Moncusi, J., Maixe-Altes, J., Martinez-Salamero, L.: ‘Sliding-mode control-based boost converter for high voltage-low power applications’, IEEE Trans. Ind. Electron., 2015, 62, pp. 229–237 (doi: 10.1109/TIE.2014.2327004).
-
15)
-
13. Biela, J., Aggeler, D., Bortis, D., Kolar, J.W.: ‘Balancing circuit for a 5-Kv/50-Ns pulsed-power switch based on Sic-Jfet super cascode’, IEEE Trans. Plasma Sci., 2012, 40, (10), pp. 2554–2560 (doi: 10.1109/TPS.2011.2169090).
-
16)
-
3. Mazumder, S.K., Jedraszczak, P.: ‘Evaluation of a SiC dc/dc converter for plug-in hybrid-electric-vehicle at high inlet-coolant temperature’, IET Power Electron., 2011, 4, (6), pp. 708–714 (doi: 10.1049/iet-pel.2010.0228).
-
17)
-
9. Cai, C., Zhou, W., Sheng, K.: ‘Characteristics and application of normally-off Sic-Jfets in converters without antiparallel diodes’, IEEE Trans. Power Electron., 2013, 28, (10), pp. 4850–4860 (doi: 10.1109/TPEL.2012.2237417).
-
18)
-
10. Josifovic, I., Popovic-Gerber, J., Ferreira, J.A.: ‘Improving Sic Jfet switching behavior under influence of circuit parasitics’, IEEE Trans. Power Electron., 2012, 27, (8), pp. 3843–3854 (doi: 10.1109/TPEL.2012.2185951).
-
19)
-
30. Utkin, V.I., Gulder, J., Shi, J.: ‘Sliding mode control in electromechanical systems’ (CRC Press, , 2009, 2nd edn.).
-
20)
-
37. Kazimerczuk, M.K.: ‘Pulse-width modulated dc–dc power converters’ (John Wiley & Sons, Ltd, 1997).
-
21)
-
26. Fuerback, A.L., da S Postiglione, C., Nascimento, C., Martins, D.C., Perin, A.J.: ‘Near-unity power factor electronic ballast based on integration techniques to drive high-intensity discharge metal halide lamps’, IEEE Trans. Ind. Electron., 2012, 59, (4), pp. 1760–1769 (doi: 10.1109/TIE.2010.2102323).
-
22)
-
39. Valderrama-Blavi, H., Leon-Masich, A., Bosqué-Moncusí, J.M., Martínez-Salamero, L.: ‘Convertidor elevador y foco provisto de éste’. , 2010.
-
23)
-
8. Abuishmais, I., Undeland, T.: ‘Dynamic characterization of 63 Mq, 1.2 Kv, normally-off Sic Vjfet’. IEEE Eighth Int. Conf. on Power Electronics and ECCE Asia (ICPE & ECCE), 2011, June 2011.
-
24)
-
16. Guedon, F., Singh, S., McMahon, R., Udrea, F.: ‘Boost converter with Sic Jfets: comparison with coolmos and tests at elevated case temperature’, IEEE Trans. Power Electron., 2013, 28, (4), pp. 1938–1945 (doi: 10.1109/TPEL.2012.2201753).
-
25)
-
1. Millan, J., Godignon, P., Perpinya, X., Perez-Tomas, A., Rebollo, J.: ‘A survey of wide band gap power semiconductor devices’, IEEE Trans. Power Electron., 2013, PP, (99), p. 1.
-
26)
-
2. Hudgins, J.L., Simin, G.S., Santi, E., Khan, M.A.: ‘An assessment of wide bandgap semiconductors for power devices’, IEEE Trans. Power Electron., 2003, 18, (3), pp. 907–914 (doi: 10.1109/TPEL.2003.810840).
-
27)
-
14. Aggeler, D., Biela, J., Inoue, S., Akagi, H., Kolar, J.W.: ‘Bi-Directional isolated Dc-Dc converter for next-generation power distribution – comparison of converters using Si and Sic devices’. Power Conversion Conf. – Nagoya, 2007, PCC'07, 2007.
-
28)
-
18. Friedli, T., Hartmann, M., Kolar, J.W.: ‘The essence of three-phase Pfc rectifier systems-part Ii’, IEEE Trans. Power Electron., 2014, 29, (2), pp. 543–560 (doi: 10.1109/TPEL.2013.2258472).
-
29)
-
24. Cheng, H.L., Cheng, C.A., Chang, Y.N., Tsai, K.M.: ‘Analysis and implementation of an integrated electronic ballast for high-intensity-discharge lamps featuring high-power factor’, IET Power Electron., 2013, 6, (5), pp. 1010–1018 (doi: 10.1049/iet-pel.2012.0691).
-
30)
-
M. Bhatnagar ,
B.J. Baliga
.
Comparison of 6H-SiC, 3C-SiC, and Si for power devices.
IEEE Trans. Electron Devices
,
3
-
31)
-
4. Huque, M.A., Tolbert, L.M., Blalock, B.J., et al: ‘Silicon-on-insulator-based high-voltage, high-temperature integrated circuit gate driver for silicon carbide-based power field effect transistors’, IET Power Electron., 2010, 3, (6), pp. 1001–1009 (doi: 10.1049/iet-pel.2008.0287).
-
32)
-
23. Friedli, T., Round, S.D., Kolar, J.W.: ‘A 100 kHz Sic sparse matrix converter’. Power Electronics Specialists Conf., 2007, PESC 2007, June 2007.
-
33)
-
28. Da Silva, M.F., Fraytag, J., Schlittler, M.E., et al: ‘Analysis and design of a single-stage high-power-factor dimmable electronic ballast for electrodeless fluorescent lamp’, IEEE Trans. Ind. Electron., 2013, 60, (8), pp. 3081–3091 (doi: 10.1109/TIE.2012.2203774).
-
34)
-
33. Cabal, C., Martinez-Salamero, L., Seguier, L., Alonso, C., Guinjoan, F.: ‘Maximum power point tracking based on sliding mode control for output-series connected converters in photovoltaic systems’, IET Power Electron., 2014, 7, (4), pp. 914–923 (doi: 10.1049/iet-pel.2013.0348).
-
35)
-
36. McAndrew, C.C., Layman, P.A.: ‘Mosfet effective channel length, threshold voltage, and series resistance determination by robust optimization’, IEEE Trans. Electron Devices, 1992, 39, (10), pp. 2298–2311 (doi: 10.1109/16.158802).
-
36)
-
31. Singer, S.: ‘Realization of loss-free resistive elements’, IEEE Trans. Circuits Syst., 1990, 37, (1), pp. 54–60 (doi: 10.1109/31.45691).
-
37)
-
4. Weitzel, C.E., Palmour, J.W., Carter, C.H.Jr., et al: ‘Silicon carbide high-power devices’, IEEE Trans. Electron Devices, 1996, 43, (10), pp. 1732–1741 (doi: 10.1109/16.536819).
-
38)
-
20. Aggeler, D., Biela, J., Kolar, J.W.: ‘A compact, high voltage 25 Kw, 50 Khz Dc-Dc converter based on Sic Jfets’. Twenty-Third Annual IEEE Applied Power Electronics Conf. and Exposition, 2008, APEC 2008, February 2008.
-
39)
-
32. Flores-Bahamonde, F., Valderrama-Blavi, H., Martinez-Salamero, L., Maixe-Altes, J., Garcia, G.: ‘Control of a three-phase Ac/Dc vienna converter based on the sliding mode loss-free resistor approach’, IET Power Electron., 2014, 7, (5), pp. 1073–1082 (doi: 10.1049/iet-pel.2013.0405).
-
40)
-
19. Zhao, B., Song, Q., Liu, W.: ‘Experimental comparison of isolated bidirectional DC-DC converters based on all-Si and all-Sic power devices for next-generation power conversion application’, IEEE Trans. Ind. Electron., 2014, 61, (3), pp. 1389–1393 (doi: 10.1109/TIE.2013.2258304).
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