Field experience shows that the vast majority of solar photovoltaic (PV) energy system failures are related to the power conditioning system (PCS). Among the principal reliability issues of PV PCSs are thermal management and heat extraction mechanisms. The study considers practical implementation of a DC–DC boost converter as a solar PV pre-regulator in terms of thermal management, with comparative thermal performance evaluations of silicon carbide (SiC) semiconductors and silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFETs). Thermal performance evaluation of power semiconductors is based on a 1.2 kW DC–DC converter with: (i) various switching frequencies up to 300 kHz, in steps of 25 kHz; (ii) case temperatures from 25 to 150°C; and (iii) a natural convection heatsink with temperature increase rate of 0.5°C/W. Simulation and experimental results verify that losses from SiC semiconductors are low compared with Si MOSFETs. This provides an opportunity for designing a pre-regulator DC–DC boost converter with less effort required for thermal management and enhanced reliability.

References

1. 1)
  - 18. Franke, W.T., Fuchs, F.W.: ‘Comparison of switching and conducting performance of SiC-JFET and SiC-BJT with a state of the art IGBT’. Proc. 2009 Euro. Conf. Power Electron. and Appl. (EPE2009), Barcelona, Spain, September 2009, pp. 1–10.
2. 2)
  - 14. Ho, C.N.M., Breuninger, H., Pettersson, S., Escobar, G.: ‘A comparative performance study of an interleaved boost converter using commercialized Si and SiC diodes for PV applications’. IEEE Eighth Int. Conf. Power Electronics and ECCE Asia (ICPE & ECCE), Jeju, Korea, May 2011, pp. 1190–1197.
3. 3)
  - 4. Araujo, S.V., Zacharias, P.: ‘Perspectives of high-voltage SiC-semiconductors in high power conversion systems for wind and photovoltaic sources’. Proc. 2011 – 14th Euro. Conf. Power Electron. and Appl. (EPE 2011), Birmingham, UK, August 2011, pp. 1–10.
4. 4)
  - 25. Power factor correction inductor design for switched mode power supplies using Metglas Powerlite C-Cores: Metglas Application Guides. Available at: http://www.metglas.com/downloads/apps/pfc.pdf.
5. 5)
  - 19. Shen, Z.J., Yali, X., Xu, C., Yue, F.: ‘Power MOSFET switching loss analysis: a new insight’. 41st Industry Applications Conf. IAS Annual Meeting, Tampa, USA, October 2006, pp. 1438–1442.
6. 6)
  - 19. Trentin, A., Zanchetta, P., Wheeler, P., Clare, J.: ‘Performance evaluation of high-voltage 1.2 kV silicon carbide metal oxide semi-conductor field effect transistors for three-phase buck-type PWM rectifiers in aircraft applications’, IET Power Electron., 2012, 5, (9), pp. 1873–1881 (doi: 10.1049/iet-pel.2011.0466).
7. 7)
  - 26. Yu, C., Liang, Y.C., Samudra, G.S., Xin, Y.: ‘Progressive development of superjunction power MOSFET devices’, IEEE Trans. Electron Devices, 2008, 55, (1), pp. 211–219 (doi: 10.1109/TED.2007.911344).
8. 8)
  - 12. Yaosuo, X., Divya, K.C., Gripentrog, G., Liviu, M.: ‘Towards next generation photovoltaic inverters’. Energy Conversion Congress and Exposition (ECCE), 2011 IEEE, Phoenix, USA, September 2011, pp. 2467–2474.
9. 9)
  - 3. Mazumder, S.K., Jedraszczak, P.: ‘Evaluation of a SiC dc/dc converter for plug-in hybrid-electric-vehicle at high inlet-coolant temperature’, IET Power Electron., 2011, 4, (6), pp. 708–714 (doi: 10.1049/iet-pel.2010.0228).
10. 10)
  - 27. Alatise, O., Adotei, N., Mawby, P.: ‘Super-junction trench MOSFETs for improved energy conversion efficiency’. Second IEEE PES Int. Conf. and Exhib. Innovative Smart Grid Technologies (ISGT Europe), Manchester, UK, December 2011, pp. 1–5.
11. 11)
  - 20. Graovac, D., Purschel, M., Kiep, A.: ‘MOSFET power losses calculation using the data sheet parameters’. infeneon July 2006.
12. 12)
  - 15. Henze, N., Engler, A., Zacharias, P.: ‘Photovoltaic module with integrated power conversion and interconnection system – the European project PV-MIPS’. 21st Euro Photovoltaic Solar Energy Conf. and Exhib., Dresden, Germany, September 2006.
13. 13)
  - G. Petrone , G. Spagnuolo , R. Teodorescu , M. Veerachary , M. Vitelli . Reliability issues in photovoltaic power processing systems. IEEE Trans. Ind. Electron. , 7 , 2569 - 2580
14. 14)
  - 28. Zare, F.: ‘EMI issues in modern power electronic systems’, IEEE EMC Soc. Newsletters, 2009, pp. 53–58.
15. 15)
  - 13. Skoczek, A., Sample, T., Dunlop, E.D.: ‘The results of performance measurements of field-aged silicon photovoltaic modules’, Prog. Photovolt., Res. Appl., 2009, pp. 227–240 (doi: 10.1002/pip.874).
16. 16)
  - 7. Stalter, O., Burger, B., Lehrmann, S.: ‘Silicon Carbide (SiC) D-MOS for grid-feeding solar-inverters’. Proc. Euro. Conf. Power Electron. and Appl. (EPE2007), Aalborg, Denmark, September 2007, pp. 1–10.
17. 17)
  - 31. Takao, K., Shinohe, T., Harada, S., Fukude, K., Ohashi, H.: ‘Evaluation of a SiC power module using low-on-resistance IEMOSFET and JBS for high power density power converters’. Applied Power Electronics Conf. and Exposition (APEC'10), Palm Springs, USA, February 2010, pp. 2030–2035.
18. 18)
  - 33. Chinthavali, M., Puqi, N., Yutian, C., Tolbert, L.M.: ‘Investigation on the parallel operation of discrete SiC BJTs and JFETs’. Applied Power Electronics Conf. and Exposition (APEC'11), Fort Worth, USA, March 2011, pp. 1076–1083.
19. 19)
  - 10. Das, M.K., Hull, B.A., Richmond, J.T., Heath, B.: ‘Ultra high power 10 kV, 50 A SiC PiN diodes’. Proc. 2005 – 17th Int. Conf. Power Semiconductor Devices and ICs, Santa Barbara, USA, May 2005, pp. 299–302.
20. 20)
  - 30. Caldeira, P., Liu, R., Dalal, D., Gu, W.J.: ‘Comparison of EMI performance of PWM and resonant power converters’. 24th Annual IEEE Power Electronics Specialists Conf. (PESC), Seattle, USA, June 1993, pp. 134–140.
21. 21)
  - 9. Tanaka, H., Hayashi, T., Shimoida, Y., Yamagami, S.: ‘Ultra-low von and high voltage 4H-SiC heterojunction diode’. Proc. 2005 – 17th Int. Conf. Power Semiconductor Devices and ICs, Santa Barbara, USA, May 2005, pp. 287–290.
22. 22)
  - 8. Frank, P., Bruno, B.: ‘A new high voltage Schottky diode based on silicon-carbide (SiC)’. Proc. 2001 – 9th Euro. Conf. Power Electron. and Appl. (EPE 2001), Leoben, Austria, August 2001, p. 259.
23. 23)
  - 16. Kranzer, D., Wilhelm, C., Reiners, F., Burger, B.: ‘Application of normally-off SiC-JFETs in photovoltaic inverters’. Proc. 2009 Euro. Conf. Power Electron. and Appl. (EPE2009), Barcelona, Spain, September 2009, pp. 1–6.
24. 24)
  - 11. Dhere, N.G.: ‘Reliability of PV modules and balance-of-system components’. 31st IEEE Conf. Photovoltaic Specialists, Lake Buena Vista, USA, January 2005, pp. 1570–1576.
25. 25)
  - 24. Power factor correction inductor design for switched mode power supplies using Metglas Powerlite C-Cores: Metglas Application Guides. Available at: http://www.metglas.com/downloads/apps/pfc.pdf.
26. 26)
  - 21. Wrzecionko, B., Bortis, D., Biela, J., Kolar, J.W.: ‘Novel AC-coupled gate driver for ultrafast switching of normally off SiC JFETs’, IEEE Trans. Power Electron., 2012, 27, (7), pp. 3452–3463 (doi: 10.1109/TPEL.2011.2182209).
27. 27)
  - 22. Hauke, B.: ‘Basic calculation of a boost converter's power stage’. Texas Instruments Nov 2009, Application Report_SLVA372B.
28. 28)
  - 17. Gurfinkel, M., Xiong, H.D., Cheung, K.P., Suehle, J.S.: ‘Characterization of transient gate oxide trapping in SiC MOSFETs using fast I–V techniques’, IEEE Trans. Electron Devices, 2008, 55, (8), pp. 2004–2012 (doi: 10.1109/TED.2008.926626).
29. 29)
  - 1. Sahan, B., Araujo, S.V., Kirstein, T., Menezes, L., Zacharias, P.: ‘Photovoltaic converter topologies suitable for SiC-JFETs’. Proc. Int. Conf. & Exh. Power Electron. Intel. Motion Power Quality PCIM Europe 2009, Nuremberg, Germany, May 2009, pp. 431–437.
30. 30)
  - 32. Sheng, K., Zhang, Y., Su, M., et al: ‘Demonstration of the first SiC power integrated circuit’, Solid-State Electron., 2008, 52, (10), pp. 1636–1646 (doi: 10.1016/j.sse.2008.06.037).
31. 31)
  - 23. Magnetics XFlux cores: 6.5% SiFe cores for high current applications MAGNETICS_http://www.mag-inc.com/products/powder-cores/xflux-cores.
32. 32)
  - 2. Ohashi, H.: ‘Power electronics innovation with next generation advanced power devices’. 25th Int. Conf. Telecommunications Energy, Yokohama, Japan, October 2003, pp. 9–13.
33. 33)
  - 29. Wu, X., Pong, M.H., Lee, C.M., Qian, Z.M.: ‘Reduction of EMI by electric field method’. Applied Power Electronics Conf. and Exposition, APEC‘99, Dallas, USA, March 1999, pp. 14–18.

Practical implementation of a silicon carbide-based 300 kHz, 1.2 kW hard-switching boost-converter and comparative thermal performance evaluation

References

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