Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

access icon free Electrical method to measure the transient thermal impedance of insulated gate bipolar transistor module

  • Author(s): Mei-Yu Wang 1 ; Guo-Quan Lu 1, 2 ; Yun-Hui Mei 1 ; Xin Li 1 ; Lei Wang 3 ; Gang Chen 3
    • View affiliations
    • Affiliations: 1: Key Laboratory of Advanced Joining Technology and School of Materials Science and Engineering, Tianjin University, Tianjin, People's Republic of China;
      2: Department of Material Science and Engineering, Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, 24061, USA;
      3: School of Chemical Engineering and Technology, Tianjin University, Tianjin, People's Republic of China
  • Source: Volume 8, Issue 6, June 2015, p. 1009 – 1016
    DOI:  10.1049/iet-pel.2014.0120 , Print ISSN 1755-4535, Online ISSN 1755-4543
© The Institution of Engineering and Technology
Received 16/02/2014, Accepted 07/01/2015, Revised 21/10/2014, Published 23/02/2015

The thermal characterisation of insulated gate bipolar transistor (IGBT) module is very important, since the production consistency and reliability are affected when IGBT is exploited in high temperature. To investigate the transient thermal behaviour of IGBT, a transient thermal impedance (Z th) measurement system was built using the electrical method with gate-emitter voltage as temperature-sensitive parameter. Factors affecting the Z th measurement, such as environment temperature, heating power, duty cycle and heating time, were discussed in detail. The Z th of each component within IGBT module was measured by selecting right heating time before thermal equilibrium. It is found that the Z th measurement has high accuracy and repeatability, which is helpful to understand how thermal performance of IGBT module varies with architecture and material properties for power electronic packaging.

Inspec keywords: semiconductor device packaging; semiconductor device reliability; insulated gate bipolar transistors; measurement systems

Other keywords: transient thermal behaviour; architecture properties; heating power; production reliability; material properties; duty cycle; transient thermal impedance measurement system; environment temperature; electrical method; insulated gate bipolar transistor module; temperature-sensitive parameter; production consistency; gate-emitter voltage; IGBT module; power electronic packaging; thermal equilibrium; heating time

Subjects: Instrumentation and measurement systems; Reliability; Bipolar transistors; Insulated gate field effect transistors; Product packaging

References

    1. 1)
      • 29. ‘Infineon IGBT (IKP20N60T) datasheet’, http://www.infineon.com/cms/en/product/index.html, accessed 2014.
    2. 2)
    3. 3)
      • 18. Faghri, A., Zhang, Y., Howell, J.R.: ‘Advanced heat and mass transfer’ (Global Digital Press, 2010).
    4. 4)
      • 19. Paasschens, J.C.J., Harmsma, S., Vander Toorn, R.: ‘Dependence of thermal resistance on ambient and actual temperature’. Proc. Bipolar/BiCMOS Circuits Tech., September 2004, pp. 96–99.
    5. 5)
      • 17. Siegal, B.S.: ‘Factors affecting semiconductor device thermal resistance measurements’. IEEE Semiconductor Thermal IV., San Diego, CA, February 1988, pp. 12–18.
    6. 6)
      • 5. Sofia, J.W.: ‘Fundamental of thermal resistance measurement’. Appl. Notes Anal. Tech., Wakefield, MA, 1995.
    7. 7)
    8. 8)
    9. 9)
    10. 10)
      • 6. He, J., Mehrotra, V., Shaw, M.C.: ‘Thermal design and measurements of IGBT power modules: transient and steady state’, IEEE Trans. Ind. Appl., 1999, 2, pp. 1440–1444.
    11. 11)
    12. 12)
      • 1. Mantooth, H.A., Mojarradi, M.M., Johnson, R.W.: ‘Emerging capabilities in electronics technologies for extreme environments. Part I-high temperature electronics’, IEEE Pow. Electron. Soc. Newsl., 2006, 18, (1), pp. 9–14.
    13. 13)
      • 20. Haynes, W.M., Lide, D.R., Bruno, T.J.: ‘Handbook of chemistry and physics’ (CRC Press, 2014, 95th edn.).
    14. 14)
    15. 15)
      • 10. Feng, S.W., Xie, X.S., Lu, C.Z., Zhang, X.L., He, Y., Shen, G.D.: ‘Measurement and study on thermal characteristics of semiconductor devices by electrical method’, Chin. J. Semicond., 1999, 20, (5), pp. 358–364.
    16. 16)
      • 8. Diebold, E.J., Luft, W.: ‘Transient thermal impedance of semiconductor devices’, IEEE Trans. Commun., 1961, 79, (6), pp. 719–726.
    17. 17)
      • 12. JESD Standard 24-6: ‘Thermal impedance measurements for insulated gate bipolar transistors’, 2002.
    18. 18)
    19. 19)
    20. 20)
    21. 21)
      • 2. Ji, B., Pickert, V., Zahawi, B., Zhang, M.: ‘In-situ bond wire health monitoring circuit for IGBT power modules’. Sixth IET Int. conf. Power Electronic Mach. driv., Bristol, UK, March 2012, pp. 121–121.
    22. 22)
    23. 23)
      • 25. Pickert, V., Cheng, H., Pritchard, L., Atkinson, D.J.: ‘An experimental and computational study of water cooled heatsinks for HEV's’. Fourth IET Int. Conf. Power Electronic Mach. driv., Brighton, UK, April 2010, pp. 142–142.
    24. 24)
    25. 25)
    26. 26)
    27. 27)
    28. 28)
      • 9. Blackburn, D.L.: ‘Temperature measurements of semiconductor devices - a review’. IEEE Semiconductor Thermal, Measurement Management Symp., March 2004, pp. 70–80.
    29. 29)
      • 27. Jakopović, Z., Benčić, Z., Kolonić, F.: ‘Important properties of transient thermal impedance for Mos-Gated power semiconductors’. 99th IEEE Proc. Int. Symp. Ind. Electron, Bled, July 1999, vol. 2, pp. 574–578.
    30. 30)
      • 30. Wu, S.L., Zhang, J.: ‘Error analysis and data processing’ (Tsinghua University Press, 2010, 1st edn.).
http://iet.metastore.ingenta.com/content/journals/10.1049/iet-pel.2014.0120
Loading

Related content

content/journals/10.1049/iet-pel.2014.0120
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Print this page
This is a required field
Please enter a valid email address