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access icon free Switched-diode structure for multilevel converter with reduced number of power electronic devices

© The Institution of Engineering and Technology
Received 21/03/2013, Accepted 22/07/2013, Revised 11/06/2013, Published 30/10/2013

To reduce the number of power electronic devices in multilevel converters, a new switched-diode multilevel converter is proposed in this study. This topology generates a large number of levels with fewer number of insulated gate bipolar transistors (IGBTs), gate driver circuits and power diodes. For recommended multilevel converter, a novel method for determination of dc voltage sources magnitudes is presented. Also, the optimal structures is presented for different aims including less number of IGBTs, gate driver circuits, dc voltage sources and power diodes in order to generating a large number of levels. The proposed structure is compared with other topologies to reflect the merits of the proposed structure. The operation and performance of the proposed topology is verified by experimental and simulation results.

Inspec keywords: driver circuits; power semiconductor diodes; insulated gate bipolar transistors; switching convertors

Other keywords: switched-diode multilevel converter structure; gate driver circuit; power diode; DC voltage source magnitude; power electronic device; IGBT; insulated gate bipolar transistor

Subjects: Bipolar transistors; Power semiconductor devices; Junction and barrier diodes; Power electronics, supply and supervisory circuits; Insulated gate field effect transistors

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