Single-photon avalanche diode detectors for quantum key distribution
Single-photon avalanche diode detectors for quantum key distribution
- Author(s): G.S. Buller ; R.E. Warburton ; S. Pellegrini ; J.S. Ng ; J.P.R. David ; L.J.J. Tan ; A.B. Krysa ; S. Cova
- DOI: 10.1049/iet-opt:20070046
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- Author(s): G.S. Buller 1 ; R.E. Warburton 1 ; S. Pellegrini 1 ; J.S. Ng 2 ; J.P.R. David 2 ; L.J.J. Tan 2 ; A.B. Krysa 2 ; S. Cova 3
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View affiliations
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Affiliations:
1: School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh, UK
2: Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, UK
3: Dipartmento di Elettronica e Informazione, Politecnico di Milano, Milano, Italy
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Affiliations:
1: School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh, UK
- Source:
Volume 1, Issue 6,
December 2007,
p.
249 – 254
DOI: 10.1049/iet-opt:20070046 , Print ISSN 1751-8768, Online ISSN 1751-8776
© The Institution of Engineering and Technology
Published
The application of quantum key distribution (QKD) has raised particular demands for single-photon detectors. One of the most promising candidates at the low-loss optical fibre communications windows is the planar geometry InGaAs/InP single-photon avalanche diode. These detectors have been modelled, fabricated and characterised at 1.55 µm wavelength. Their performance in terms of single-photon detection efficiency, dark count rate, timing jitter and afterpulsing behaviour are reported and compared with the best commercially available, linear multiplication avalanche photodiodes operated in Geiger-mode. Their use in the application of QKD is discussed.
Inspec keywords: III-V semiconductors; gallium arsenide; optical fibre communication; optical fabrication; avalanche photodiodes; indium compounds
Other keywords:
Subjects: Optical fabrication, surface grinding; Photoelectric devices; Optical communication
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