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access icon free Erratum: Physical modelling and experimental characterisation of InAlAs/InGaAs avalanche photodiode for 10 Gb/s data rates and higher

© The Institution of Engineering and Technology
Received 13/10/2017, Published 13/10/2017
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Inspec keywords: semiconductor device models; III-V semiconductors; aluminium compounds; indium compounds; avalanche photodiodes

Other keywords: data rates; physical modelling; InAlAs/InGaAs avalanche photodiode

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http://iet.metastore.ingenta.com/content/journals/10.1049/iet-opt.2017.0140
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Errata
This article contains an Erratum to the following content:
Physical modelling and experimental characterisation of InAlAs/InGaAs avalanche photodiode for 10 Gb/s data rates and higher
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