Optimised THz photoconductive devices based on low-temperature grown III–V compound semiconductors incorporating distributed Bragg reflectors
- Author(s): Yuekun Wang 1 ; Ioannis Kostakis 2 ; Daryoosh Saeedkia 3 ; Mohamed Missous 1
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Volume 11, Issue 2,
April 2017,
p.
53 – 57
DOI: 10.1049/iet-opt.2016.0055 , Print ISSN 1751-8768, Online ISSN 1751-8776
This study reports work on optimised THz photoconductive antenna switches based on low-temperature grown materials incorporating distributed Bragg reflectors (DBRs). These materials were characterised electrically using Hall effect, mid-infrared reflectivity measurements and fabricated antennas tested under pulsed excitation in a time-domain spectroscopy system. It is shown that the inclusion of DBR results in enhanced THz peak signals by more than twice across the entire operating frequency range. In addition, the devices exhibit significant improvements in the relative THz power, responsivity and optical to electrical efficiency compared with the reference ones.
Inspec keywords: integrated optics; microwave photonics; gallium arsenide; integrated optoelectronics; terahertz wave devices; photoconducting switches; optimisation; reflectivity; distributed Bragg reflectors; Hall effect; electro-optical switches; microwave switches; III-V semiconductors; photoconducting devices; microwave antennas
Other keywords: distributed Bragg reflectors; GaAs; Hall effect; THz photoconductive antenna switches; time-domain spectroscopy system; responsivity; DBR; optical-electrical efficiency; pulsed excitation; mid-infrared reflectivity measurements; optimised THz photoconductive devices; low-temperature grown III-V compound semiconductors
Subjects: Integrated optics; Integrated optoelectronics; Optimisation techniques; Photoelectric devices; Electro-optical devices; Microwave photonics; Integrated optics; Antennas; Optical switches
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