Parametric study of 1310 nm ridge waveguide AlGaInAs-InP semi-conductor laser dynamics
- Author(s): Horacio I. Cantú 1 ; Andrew McKee 1 ; Iain Eddie 1 ; Anthony E. Kelly 2
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Volume 9, Issue 6,
December 2015,
p.
341 – 347
DOI: 10.1049/iet-opt.2015.0011 , Print ISSN 1751-8768, Online ISSN 1751-8776
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Dynamic performance of directly modulated Fabry–Pérot lasers is presented in this work subject to variation of parameters such as cavity length and facet reflectivity. This study is focused on the effect that physical parameters have on the slope of the laser resonance frequency against the square root of the injection current. Temperature variation is also studied to determine modulation bandwidth available for high speed device operation at 10 Gbps. The effect of facet reflectivity and temperature over the laser spectrum and wavelength is also discussed.
Inspec keywords: indium compounds; III-V semiconductors; ridge waveguides; reflectivity; thermo-optical effects; aluminium compounds; semiconductor lasers; waveguide lasers; laser beams; gallium compounds; optical modulation; laser cavity resonators
Other keywords: temperature variation; laser resonance frequency; temperature effects; high speed device operation; ridge waveguide semiconductor laser dynamics; cavity length; facet reflectivity; modulation bandwidth; wavelength 1310 nm; laser spectrum; AlGaInAs-InP; bit rate 10 Gbit/s; injection current; laser wavelength; directly modulated Fabry-Pérot lasers
Subjects: Lasing action in semiconductors; Laser beam modulation, pulsing and switching; mode locking and tuning; Laser resonators and cavities; Laser beam modulation, pulsing and switching; mode locking and tuning; Laser beam characteristics and interactions; Semiconductor lasers; Laser resonators and cavities; Design of specific laser systems; Laser beam interactions and properties
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