Electrically pumped continuous-wave 1.3-µm InAs/GaAs quantum dot lasers monolithically grown on Si substrates
- Author(s): Jiang Wu 1 ; Andrew Lee 1 ; Qi Jiang 1 ; Mingchu Tang 1 ; Alwyn J. Seeds 1 ; Huiyun Liu 1
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View affiliations
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Affiliations:
1:
Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK
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Affiliations:
1:
Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK
- Source:
Volume 8, Issue 2,
April 2014,
p.
20 – 24
DOI: 10.1049/iet-opt.2013.0093 , Print ISSN 1751-8768, Online ISSN 1751-8776
Continuous-wave (CW) operation of InAs/GaAs quantum dot (QD) lasers monolithically grown on Si substrates by molecular beam epitaxy is presented. The peak lasing wavelength of 1278 nm is accompanied by a low threshold current density of 458 A/cm2 at 8°C using a GaAs buffer layer directly grown on the Si substrates. The improvement in laser performance is due to improved crystal quality of the GaAs buffer layer. The demonstration of a CW QD laser also benefits from using top–top contacts, which route the current through the laser active layer to avoid the high-density defects near the Si/GaAs interface. These results demonstrate the growing potential of the monolithically integrated III–V QD lasers on the Si substrates.
Inspec keywords: current density; silicon; monolithic integrated circuits; laser beams; gallium arsenide; integrated optics; molecular beam epitaxial growth; quantum dash lasers; optical pumping; indium compounds; III-V semiconductors
Other keywords: GaAs buffer layer; CW QD laser; monolithically integrated III–V QD lasers; Si−GaAs; peak lasing wavelength; wavelength 1.3 mum; high-density defect; molecular beam epitaxy; wavelength 1278 nm; temperature 8 degC; laser performance; low threshold current density; InAs−GaAs; improved crystal quality; continuous-wave operation; laser active layer; Si substrates; top–top contacts; electrically pumped continuous-wave InAs/GaAs quantum dot lasers
Subjects: Laser beam characteristics and interactions; Design of specific laser systems; Vacuum deposition; Vacuum deposition; Semiconductor lasers; Integrated optics; Lasing action in semiconductors; Laser beam interactions and properties; Integrated optics; Semiconductor integrated circuits
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